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    NPN 1W 40V TO39 Search Results

    NPN 1W 40V TO39 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN 1W 40V TO39 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3904CSM

    Abstract: 2N3904D 2N3904DCSM 2N3799 2N3810XDCSM PNP TO77 package
    Text: Search Results Part number search for devices beginning "2N3791" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N3791 PNP TO3 60V 10A 50 150 2/1 4MHz 150W


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    PDF 2N3791" 2N3791 2N3791CECC 2N3791SMD 2N3791SMD-JQR-B O276AB) 2N3799" 2N4027 100MHz 2N3904CSM 2N3904D 2N3904DCSM 2N3799 2N3810XDCSM PNP TO77 package

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2A 40V NPN

    Abstract: 150v 3A pnp BSW68A bu326
    Text: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz


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    PDF BSS71" BSS71 BSS71CSM BSS71CSM-JQR-B BSS71DCSM BSS71DCSM-JQR-B 10/30m 2A 40V NPN 150v 3A pnp BSW68A bu326

    200v 4A pnp

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N4239" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4239 PNP TO39 80V 1A 30 - 10/0.1 1MHz 0.8W


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    PDF 2N4239" 2N4239 2N4239-JQR-B 2N4239X 2N4233" 2N4233 2N4233A 2N4233A-JQR-B 2N4233-JQR-B 10/10m 200v 4A pnp

    Untitled

    Abstract: No abstract text available
    Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver


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    PDF NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW,

    NTE346

    Abstract: npn 1W 40V to39
    Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver


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    PDF NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW, npn 1W 40V to39

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8980 2N3053 MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR FEATURES = 40V • lc = 0.7A •Ptot TO39 PACKAGE


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    PDF 2N3053

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A • Hermetic Metal TO39 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage (IE = 0)


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    PDF 2N5154T2A O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A • Hermetic Metal TO39 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage (IE = 0)


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    PDF 2N5154T2A 71mW/Â 67mW/Â O-205AD)

    transistor 2n3053

    Abstract: No abstract text available
    Text: 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCEO = 40V


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    PDF 2N3053 O-205AD) 2N3053A" 2N3053A 100MHz transistor 2n3053

    2N5338X

    Abstract: 2N5339X
    Text: 2N5338X 2N5339X SEME LAB MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) DESCRIPTION 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200)


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    PDF 2N5338X 2N5339X 2N5339X 300ms 2N5338X

    Untitled

    Abstract: No abstract text available
    Text: 2N5338X 2N5339X SEME LAB NPN SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. The 2N5338X & 2N5339X silicon expitaxial planar NPN transistor in jedec


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    PDF 2N5338X 2N5339X 2N5338X 2N5339X 2N5339" 2N5339X-JQR-B 30MHz

    Untitled

    Abstract: No abstract text available
    Text: 2N5338X 2N5339X SEME LAB MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) DESCRIPTION 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200)


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    PDF 2N5338X 2N5339X 2N5339X 300ms

    2N5339

    Abstract: No abstract text available
    Text: 2N5338X 2N5339X SEME LAB MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) DESCRIPTION 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200)


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    PDF 2N5338X 2N5339X 2N5338X 2N5339X 300ms 2N5339

    Untitled

    Abstract: No abstract text available
    Text: 2N3253 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES • High Voltage Switching 12.70 (0.500) min. 0.89 max. (0.035) • Hermetic TO39 Package 0.41 (0.016)


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    PDF 2N3253 O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCEO = 40V


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    PDF 2N3053 100MHz 300mS

    transistor 2n3053

    Abstract: 2N3053 equivalent 0015a 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 2N3053 2N3053 transistor C22B h21e transistor datasheet 2N3053
    Text: 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCEO = 40V


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    PDF 2N3053 100MHz 300mS transistor 2n3053 2N3053 equivalent 0015a 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 2N3053 2N3053 transistor C22B h21e transistor datasheet 2N3053

    Untitled

    Abstract: No abstract text available
    Text: 2N5786 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200) typ. 2.54


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    PDF 2N5786 O-205AD) 2N5786-JQR" 2N5786-JQR-B

    BC441-5

    Abstract: BC441 transistor BC441 BC441 SEMELAB
    Text: BC441–5 MECHANICAL DATA Dimensions in mm inches BIPOLAR NPN TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • SILICON PLANAR EPITAXIAL NPN TRANSISTORS • HERMETICALLY SEALED TO-39 PACKAGE


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    PDF BC441 BC441-5 BC441 transistor BC441 SEMELAB

    semelab 2N6287

    Abstract: 2N6300J 2n6278 to63
    Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz


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    PDF 2N6298" 2N6298 2N6298-JQR-B 2N6276" 2N6276 2N6276A 2N6276A-JQR-B 2N6276-JQR-B 2N6374" 2N6374 semelab 2N6287 2N6300J 2n6278 to63

    npn 60V 600mw

    Abstract: 2195A 2243A 150PF 2n2539 2N699 MA8003
    Text: General Purpo/e Tran/i/tor/ npn TO- 18 10-106 it r E lectrical C haracteristics @ T & = 25°C M axim u m Ratings TYPE NO . •c Pd NPN @Ta = bv Cbo L V CEO b v EBo h FE @ V q e @ >C max. m in./m ax. 25°C V C E sat @ l C / l B C ob CASE fT @ l C max. min.


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    PDF O-I06 250mW 500mA 200MHz O-106 npn 60V 600mw 2195A 2243A 150PF 2n2539 2N699 MA8003

    2N4236

    Abstract: 2N4234
    Text: 2WV rt L D IS K G2N 4234 2N 4235 EPITAXIAL PLANAR PNP 2N 4236 MEDIUM POWER GENERAL PURPOSE TRANSISTORS The 2N4234. 2N4235 and 2N4236 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are intended for use in sw itching and am plifier applications.


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    PDF 2N4234. 2N4235 2N4236 2N4237, 2N4238 2N4239 2N4234 2N4235 2N4236 100mA

    BC440

    Abstract: BC441 BC460 BC461
    Text: BC 460 BC461 BC440 BC441 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 CASE TO-39 THE BC440, BC441» BC 46O, BC 46I ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE, THE BC440, BC441 ARE NPN AND ARE COMPLE­


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    PDF BC440 BC441 BC460 BC461 BC440, BC441Â BC46O, BC46I

    BC460

    Abstract: BC441 BC440
    Text: BC460 BC461 BC440 BC 441 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES I CASE TO-39 THE BC440, BC441» BC460, BC4Ô1 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THE BC440, BC441 ABE NPN AND ARE COMPLE­


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    PDF BC440 BC440, BC441» BC460, BC441 BC46I BC460 BC461