2N3904CSM
Abstract: 2N3904D 2N3904DCSM 2N3799 2N3810XDCSM PNP TO77 package
Text: Search Results Part number search for devices beginning "2N3791" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N3791 PNP TO3 60V 10A 50 150 2/1 4MHz 150W
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2N3791"
2N3791
2N3791CECC
2N3791SMD
2N3791SMD-JQR-B
O276AB)
2N3799"
2N4027
100MHz
2N3904CSM
2N3904D
2N3904DCSM
2N3799
2N3810XDCSM
PNP TO77 package
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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2A 40V NPN
Abstract: 150v 3A pnp BSW68A bu326
Text: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz
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BSS71"
BSS71
BSS71CSM
BSS71CSM-JQR-B
BSS71DCSM
BSS71DCSM-JQR-B
10/30m
2A 40V NPN
150v 3A pnp
BSW68A
bu326
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200v 4A pnp
Abstract: No abstract text available
Text: Search Results Part number search for devices beginning "2N4239" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4239 PNP TO39 80V 1A 30 - 10/0.1 1MHz 0.8W
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2N4239"
2N4239
2N4239-JQR-B
2N4239X
2N4233"
2N4233
2N4233A
2N4233A-JQR-B
2N4233-JQR-B
10/10m
200v 4A pnp
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Untitled
Abstract: No abstract text available
Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
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NTE346
NTE346
500MHz
50mAdc
12Vdc
175MHz
100mW,
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NTE346
Abstract: npn 1W 40V to39
Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
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NTE346
NTE346
500MHz
50mAdc
12Vdc
175MHz
100mW,
npn 1W 40V to39
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Untitled
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8980 2N3053 MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR FEATURES = 40V • lc = 0.7A •Ptot TO39 PACKAGE
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2N3053
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A • Hermetic Metal TO39 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage (IE = 0)
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2N5154T2A
O-205AD)
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A • Hermetic Metal TO39 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage (IE = 0)
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2N5154T2A
71mW/Â
67mW/Â
O-205AD)
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transistor 2n3053
Abstract: No abstract text available
Text: 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCEO = 40V
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2N3053
O-205AD)
2N3053A"
2N3053A
100MHz
transistor 2n3053
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2N5338X
Abstract: 2N5339X
Text: 2N5338X 2N5339X SEME LAB MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) DESCRIPTION 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200)
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2N5338X
2N5339X
2N5339X
300ms
2N5338X
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Untitled
Abstract: No abstract text available
Text: 2N5338X 2N5339X SEME LAB NPN SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. The 2N5338X & 2N5339X silicon expitaxial planar NPN transistor in jedec
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2N5338X
2N5339X
2N5338X
2N5339X
2N5339"
2N5339X-JQR-B
30MHz
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Untitled
Abstract: No abstract text available
Text: 2N5338X 2N5339X SEME LAB MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) DESCRIPTION 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200)
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2N5338X
2N5339X
2N5339X
300ms
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2N5339
Abstract: No abstract text available
Text: 2N5338X 2N5339X SEME LAB MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) DESCRIPTION 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200)
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2N5338X
2N5339X
2N5338X
2N5339X
300ms
2N5339
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Untitled
Abstract: No abstract text available
Text: 2N3253 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES • High Voltage Switching 12.70 (0.500) min. 0.89 max. (0.035) • Hermetic TO39 Package 0.41 (0.016)
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2N3253
O-205AD)
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Untitled
Abstract: No abstract text available
Text: 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCEO = 40V
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2N3053
100MHz
300mS
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transistor 2n3053
Abstract: 2N3053 equivalent 0015a 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 2N3053 2N3053 transistor C22B h21e transistor datasheet 2N3053
Text: 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCEO = 40V
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2N3053
100MHz
300mS
transistor 2n3053
2N3053 equivalent
0015a
2N3053 NPN transistor
SILICON TRANSISTOR 2N3053
2N3053
2N3053 transistor
C22B
h21e
transistor datasheet 2N3053
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Untitled
Abstract: No abstract text available
Text: 2N5786 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200) typ. 2.54
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2N5786
O-205AD)
2N5786-JQR"
2N5786-JQR-B
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BC441-5
Abstract: BC441 transistor BC441 BC441 SEMELAB
Text: BC441–5 MECHANICAL DATA Dimensions in mm inches BIPOLAR NPN TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • SILICON PLANAR EPITAXIAL NPN TRANSISTORS • HERMETICALLY SEALED TO-39 PACKAGE
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BC441
BC441-5
BC441 transistor
BC441 SEMELAB
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semelab 2N6287
Abstract: 2N6300J 2n6278 to63
Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz
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2N6298"
2N6298
2N6298-JQR-B
2N6276"
2N6276
2N6276A
2N6276A-JQR-B
2N6276-JQR-B
2N6374"
2N6374
semelab 2N6287
2N6300J
2n6278 to63
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npn 60V 600mw
Abstract: 2195A 2243A 150PF 2n2539 2N699 MA8003
Text: General Purpo/e Tran/i/tor/ npn TO- 18 10-106 it r E lectrical C haracteristics @ T & = 25°C M axim u m Ratings TYPE NO . •c Pd NPN @Ta = bv Cbo L V CEO b v EBo h FE @ V q e @ >C max. m in./m ax. 25°C V C E sat @ l C / l B C ob CASE fT @ l C max. min.
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O-I06
250mW
500mA
200MHz
O-106
npn 60V 600mw
2195A
2243A
150PF
2n2539
2N699
MA8003
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2N4236
Abstract: 2N4234
Text: 2WV rt L D IS K G2N 4234 2N 4235 EPITAXIAL PLANAR PNP 2N 4236 MEDIUM POWER GENERAL PURPOSE TRANSISTORS The 2N4234. 2N4235 and 2N4236 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are intended for use in sw itching and am plifier applications.
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2N4234.
2N4235
2N4236
2N4237,
2N4238
2N4239
2N4234
2N4235
2N4236
100mA
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BC440
Abstract: BC441 BC460 BC461
Text: BC 460 BC461 BC440 BC441 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 CASE TO-39 THE BC440, BC441» BC 46O, BC 46I ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE, THE BC440, BC441 ARE NPN AND ARE COMPLE
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BC440
BC441
BC460
BC461
BC440,
BC441Â
BC46O,
BC46I
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BC460
Abstract: BC441 BC440
Text: BC460 BC461 BC440 BC 441 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES I CASE TO-39 THE BC440, BC441» BC460, BC4Ô1 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THE BC440, BC441 ABE NPN AND ARE COMPLE
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BC440
BC440,
BC441»
BC460,
BC441
BC46I
BC460
BC461
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