BCW93
Abstract: BCW93 b bcw 25 transistor BCW 93 bcw 85 transistor A 92 transistor bcw 95 transistor transistor h21e BCW92
Text: BCW 92 A, B BCW 93 A,B PNP SIL IC O N T R A N SIS T O R , E P IT A X IA L P L A N A R T R A N S IS T O R P N P S IL IC IU M , P L A N A R E P IT A X IA L - LF Amplification Amplification B F VCEO 1- 4 0 V BCW 92 t -6 0 V BCW 93 -0 ,8 A 'c 100-200 A h21E
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BCW93
CB-76
300MS
BCW93 b
bcw 25 transistor
BCW 93
bcw 85 transistor
A 92 transistor
bcw 95 transistor
transistor h21e
BCW92
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bsy 53
Abstract: BSY54 BSY53 bsy 39 BSY 54
Text: BSY 53 BSY 54 NPN SILICON TR A N SIS TO R , E P IT A X IA L P L A N A R T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L - L F amplification A m p lific a tio n B F - Switching C o m m u ta tio n 75 V v CBO h21E 1S0mA fT 40-120 Case TO-39 — See o u tlin e d ra w in g C B -7 o n last pages
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PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
Abstract: BUX53
Text: Power transistors • NPN « Epitaxial Planar » Am plifier and switching NP N « Planar E p itaxte » A m p lific a tio n e t co m m u ta tio n Type Case Boitier *tot W * V CEx 'c VCEO (V) (A) h21E m in max 'c (A) VCEsat / ' C (V) / (A /l('AB) fT (MHz)
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Tpu76
PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
BUX53
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h21e
Abstract: 3055 pnp transistor 3055 TRANSISTOR BDX 14 Transistors 2n3054
Text: A C T IV E C O M PO N EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS ACTIFS POUR CIRCUITS HYBRIDES NPN planar power transistors chips Transistors de puissance planar (pastilles) Type Type V CBO (V) V CEO (V) 'cm (A) V CE (V) h21E !C (m A ) min max J.2N 2890
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tt 2194
Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
Text: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs
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2N5415
2N5416
tt 2194
LTLS
2n3054
2N2243
aa2n
BUX54
2N2192
2N2195
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Transistors bd 133
Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20
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TPu75
2N6101
Transistors bd 133
BD304
2n3054
81 220
bdy82
2N3713
2N6111
2N3055
bd 135
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transistor 152 M
Abstract: No abstract text available
Text: 2N1986 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLAN A R E P ITAXIAL - LF amplification A m plification BF - Switching Commutation v CBO 50V h21E 150m A 60 - 240 V CEsat (30 mA/3 mA) 0,6 V max. Maximum power dissipation Case TO-39 — See outline drawing CB-7 on last pages
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2IM1986
transistor 152 M
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Untitled
Abstract: No abstract text available
Text: ACTIVE COM PONENTS FO R HYBRID CIRC U ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES Silicon IMPN tran sisto rs, low noise chip Transistors NPN silicium, faible bruit (pastille) Type Typ.9 VCBO (V) VCEO (V) h21E 'c ' (mA) *C V CE (V) (mA) F (dB) min - max
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C818
Abstract: bsx46 bsx45
Text: B S X 4 5 NPN S IL IC O N TR A N S IS T O R S , E P IT A X IA L P LA N A R TR A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X B S X 4 6 Compì, o f BSV 15, BSV 16 - LF amplification A m plification B F 40 V BSX 45 v CEO l 60 V BSX 46 h21E
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Unle11b
100/uA
i15ns
C818
bsx46
bsx45
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transistors BC 183
Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
Text: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200
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CB-76
transistors BC 183
TR BC 238
BC Transistors
h21E
BC 182
TR BC 237 B
bc 237
BC174
BC213A
BC307A
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bcw 94 b
Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
Text: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60
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BSY51
Abstract: BSY 51 BSY52 bsy 39
Text: BSY 51 BSY 52 NPN SILICON TRAN SISTO R S, E P IT A X IA L P L A N A R T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P I T A X I A U X • LF amplification A m p lific a t io n B F - Switching C o m m u ta tio n v CBO 60 V h21E 150 mA| 100-300 (BSY 52
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transistor C 639 W
Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
Text: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A
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150mA)
F139B.
CB-76
transistor C 639 W
transistor 639
BC 639 transistor
transistor BC 639
transistor BC 637
Transistor S 637 T
transistor BC 639 c
transistor BC 635
transistor bc 100
bc 639
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BSY79
Abstract: transistor 746 nixie tubes h21E1 ti c11b
Text: BSY 79 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , P LAN A R E P IT A X IA L Low current switching Commutation faible courant "Nixie" driver 120 V v CEO Commande des tubes "N ix ie ” 1 mA 30 h21E <1 v min V CEsat 0,3 V to 0,2 mA
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BSY79
BSY79
transistor 746
nixie tubes
h21E1
ti c11b
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LTLS
Abstract: 2n2891 2N 3055 BDX 78 2N5415 2N5416 BDY71 2n3738 2n3055 2n3053
Text: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat cont NPN min PNP (V) (A) / Ib max m ax (Al (W) 11 (V) (A) (A) td + tr ts tf typ * ty p * max m ax m ax M> (us) ip*) s w itc llin g tran sisto rs
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2N5415
2N5416
CB-19
LTLS
2n2891
2N 3055
BDX 78
BDY71
2n3738
2n3055
2n3053
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2N1420
Abstract: transistor t1A
Text: 2I\I 1420 NPN S IL IC O N TR A N S IS T O R , E P IT A X IA L PLA N A R T R A N S I S T O R N P N S IL IC IU M , P L A N A R E P I T A X I A L - LF amplification A m p lific a tio n L F • Switching V CER 30 V h21E *150 m A * 1 0 0 -3 0 0 fT 50 M H z C om m utation
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300fis
2N1420
transistor t1A
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BSX24
Abstract: 2N736 BC190 BSX51 BCY 107 2N735 2N929 2N930 BCY58 BCY59
Text: general purpose, amplification, switching - metal case commutation, am plification, usage général boîtier métal Type Maximum ratings PNP NPN Ptot ^ t h o m so n -c s f Characteristics a t 25°C / h21E v CEO «G VCE sat ! 'C/'B min h21e* max (mA) max
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2N735
2N736
2N929
2N930
BSX51
BSX52
BSW21
BSW22
BSX24
2N736
BC190
BCY 107
2N735
2N929
2N930
BCY58
BCY59
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Untitled
Abstract: No abstract text available
Text: 2N 2868 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR T R A N S IS T O R N P N S IL I C I U M , P L A N A R E P I T A X IA L • High current switching Comm utation fo rt niveau V CEO 40 V 'c 1A h21E^^0 mA 4 0 -1 1 0 V CEsat 150/15m A ) 0,25 V Maximum power dissipation
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150mA
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BC 540 TRANSISTOR
Abstract: transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n 2N3415
Text: general purpose transistors — plastic case transistors usage général — boîtier plastique Type NPN M ax im u m ratings PIMP Ptot Characteristics at 25 °C VcEO h21E min 2N 3414 2 N 3 4 15 2N 3416 2 N 3 4 17 2N 2N 2N 2N 2N 3707 3708 3709 3710 3711 10/
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2N3415
2N3711
30duit
BC 540 TRANSISTOR
transistor Bc 540
NPN transistor 2n 3904
transistor 2N 3904
2907pn
NPN transistor 2n 3906
2N3702P
2N 3904 transistor
transistor 2n
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SO930R
Abstract: BCF81R dxdz SO5401R SO1893 bcf81 ET 3005 BCW66R 3n08 BCW72R
Text: y g en eral purpose transistors transistors usage général THOMSON-CSF Types M axim um Characteristics at 25°C ratings NPN PN P p tot V C EO h21E @ •c VCE(sat) @ Ic/'B *T C22b min IMHz) max (pF) ^CER* min max max f B ‘ off 1 kHz max nax Marking* Pin out
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BCW31IR)
54001R)
SO930R
BCF81R
dxdz
SO5401R
SO1893
bcf81
ET 3005
BCW66R
3n08
BCW72R
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aa2n
Abstract: 2N2195 2N2243 2N1420 3053-1000 2N2192 2N2219 2N696 A-80080 2N698
Text: general purpose, amplification, switching - metal case commutation, am plification, usage général boît \e r m éta I th o m so n -csf T ype C h a r a c t e r is tic s a t 25 °C M a x im u m ra tin g s NPN PNP P to t h21E v CEO VCER* / >C V C E sat !
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2N696
aa2n
2N2195
2N2243
2N1420
3053-1000
2N2192
2N2219
2N696
A-80080
2N698
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BCW91
Abstract: bcw 91 transistor BCW91B BCW90 BCW90A H21E MA07 bcw 85 transistor BCW90B BCW90C
Text: BCW 90A, B,C BCW 91 A, B NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , P LAN A R E P ITAXIAL • LF Amplification A m plifica tio n BF v CEO MOV BCW 90 160 V BCW 91 0,8 V ■c h21E 150 mA-2 V Maximum power dissipation Plastic case
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BCW90A,
BCW91
BCW90
CB-76
bcw 91 transistor
BCW91B
BCW90
BCW90A
H21E
MA07
bcw 85 transistor
BCW90B
BCW90C
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BU 647
Abstract: 182T2 185t2 BU143 181T2 BUY69 ESM 182 BU 109 BU104
Text: CB 19 Power transistors N PN <: Triple diffused » Fast switching Transistors de puissance N P N <r Triple diffusés » Commutation rapide Ptnt *V C E X 'c B o itie r <W| V C EO (V) <A) h21E min max t '<A) ° VCE (V) CO < Case O < Type Tcasc 25 °C max *T
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TPu76
BU 647
182T2
185t2
BU143
181T2
BUY69
ESM 182
BU 109
BU104
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LS 2822
Abstract: IC 2816 2N2818 2N1209
Text: {CB 69 CB 70) Power transistors N PN k Triple Diffused » Military applications Transistors de puissance N P N « Triple diffusés » Applications militaires Type Case Boîtier Ptot (Wl * VCEX VCEO (V) *C (A) h21E ° min max l ' (A) ^ ca se^ S C v C Esat/IC M b
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TPu76
LS 2822
IC 2816
2N2818
2N1209
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