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    2N3053 Price and Stock

    Central Semiconductor Corp 2N3053-PBFREE

    TRANS NPN 40V 0.7A TO-39
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    DigiKey 2N3053-PBFREE Bulk 459 1
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    Microchip Technology Inc 2N3053

    TRANS NPN 40V 0.7A TO5
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    Avnet Americas 2N3053 Bulk 22 Weeks 100
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    Microchip Technology Inc 2N3053 22 Weeks
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    Onlinecomponents.com 2N3053
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    NAC 2N3053 7
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    Master Electronics 2N3053
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    Rochester Electronics LLC 2N3053

    TRANS NPN 40V 0.7A TO5
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    Central Semiconductor Corp 2N3053A-PBFREE

    TRANS NPN 60V 0.7A TO39
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    DigiKey 2N3053A-PBFREE Bulk 500
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    Central Semiconductor Corp 2N3053

    Trans GP BJT NPN 40V 700mA 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N3053)
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    Bristol Electronics 2N3053 604
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    2N3053 80
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    Quest Components 2N3053 216
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    2N3053 Datasheets (115)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3053 Micro Commercial Components TRANS GP BJT NPN 40V 0.7A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.7 / Hfe=50-120 / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3053 Motorola Bipolar Transistor, General Purpose Transistors NPN Silicon - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.7 / Hfe=50-120 / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3053 Semelab MEDIUM POWER SILICON NPN PLANAR TRANSISTOR Original PDF
    2N3053 Siemens Cross Reference Guide 1998 Original PDF
    2N3053 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3053 Boca Semiconductor GENERAL PURPOSE TRANSISTOR(NPN SILICON) - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.7 / Hfe=50-120 / fT(Hz)=100M / Pwr(W)=0.8 Scan PDF
    2N3053 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N3053 Central Semiconductor BJT, NPN, Silicon Epitaxial Transistor, IC 0.7A - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.7 / Hfe=50-120 / fT(Hz)=100M / Pwr(W)=0.8 Scan PDF
    2N3053 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3053 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3053 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N3053 Fairchild Semiconductor NPN small signal general purpose amplifier. - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.7 / Hfe=50-120 / fT(Hz)=100M / Pwr(W)=0.8 Scan PDF
    2N3053 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N3053 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3053 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N3053 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N3053 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N3053 General Diode Transistor Selection Guide Scan PDF
    2N3053 General Electric General purpose, medium power silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.7 / Hfe=50-120 / fT(Hz)=100M / Pwr(W)=0.8 Scan PDF
    2N3053 General Transistor Small Signal Transistor Selection Guide Scan PDF

    2N3053 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8980 2N3053 MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR FEATURES = 40V • lc = 0.7A •Ptot TO39 PACKAGE


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    PDF 2N3053

    2N3053 NPN transistor

    Abstract: 2N3053 transistor 2n3053 2N3053 transistor SILICON TRANSISTOR 2N3053
    Text: 2N3053 AMPLIFIERS AND SWITCH DESCRIPTION The 2N3053 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for medium-current switching and amplifier applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter


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    PDF 2N3053 2N3053 2N3053 NPN transistor transistor 2n3053 2N3053 transistor SILICON TRANSISTOR 2N3053

    SILICON TRANSISTOR 2N3053

    Abstract: transistor 2n3053 transistor 335
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3053 Features • • • • Medium Power Silicon NPN Planar Transistor VCEO=40V IC=0.7A Ptot=1.0W Rth jc is 35OC/W, Rth(ja) is 175OC/W


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    PDF 2N3053 35OC/W, 175OC/W 15Adc, 10Vdc) 150mAdc, 15mAdc) 10Vdc, SILICON TRANSISTOR 2N3053 transistor 2n3053 transistor 335

    transistor 2n3053

    Abstract: 2N3053 equivalent 0015a 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 2N3053 2N3053 transistor C22B h21e transistor datasheet 2N3053
    Text: 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCEO = 40V


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    PDF 2N3053 100MHz 300mS transistor 2n3053 2N3053 equivalent 0015a 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 2N3053 2N3053 transistor C22B h21e transistor datasheet 2N3053

    Untitled

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS 2N3053 2N3053A TO-39 General Purpose, Medium Current Amplifier Applications.


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    PDF 2N3053 2N3053A C-120

    2S0571

    Abstract: SK3265 2SC3419Y 2SC495 40409 silicon KT919G BFS22A BFS22 2n3053 motorola BLX65E
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 15 20 30 35 40 40389 2N3053 2N3053S 2N3053S 40392 40407 40407L 40407S 40544 40544L 40544S 40539 40539L 40539S 2N3053A 2N2949 40360 40360L :g~g~s 45 50 40361l 40361S 40408 40408l 40408S 40409 2S0571K 2S0571l


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    PDF O-126var O-126 O-237var 2S0571 SK3265 2SC3419Y 2SC495 40409 silicon KT919G BFS22A BFS22 2n3053 motorola BLX65E

    2N3053L

    Abstract: No abstract text available
    Text: 2N3053L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.


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    PDF 2N3053L O205AA) 20-Aug-02 2N3053L

    transistor 2n3053

    Abstract: 2N3053 NPN transistor 2N3053 SILICON TRANSISTOR 2N3053
    Text: 2N3053 PH IL I P S I N T E R N A T I O N A L 5bE ]> A 7 H 0 0 2 b G042Li44 T14 • IPHIN ■ T = 3 ir- t ? SILICON PLANAR TRANSISTOR N-P-N transistor in a TO -39 metal envelope designed fo r medium speed, saturated and non-saturated switching applications for industrial service.


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    PDF 2N3053 711002b G042b44 transistor 2n3053 2N3053 NPN transistor 2N3053 SILICON TRANSISTOR 2N3053

    Untitled

    Abstract: No abstract text available
    Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4


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    PDF 000bt 2N3053 2N696 2N697 BFY51 BSY51 BSY52 BC107 BCY59 BCY56

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    2N6178

    Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053


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    PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N6178 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322

    2N3053

    Abstract: No abstract text available
    Text: T -3 3 -0 5 P ow er Transistors 2N3053, 2N3053A HARRI S S E M I C O N D SE CT OR File Number 27E D M3D2S71 0 0 1 ^ 5 960 5 «H AS General-Purpose, Medium-Power Silicon N-P-N Planar Transistors TERMINAL DESIGNATIONS For Small-Signal A pplications Features:


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    PDF 2N3053, 2N3053A M3D2S71 O-205AD 2N3053 2N3053A TQ-205AD 2N3053J29R4

    2N3053

    Abstract: transistor 2n3053 2N3053 NPN transistor 2N3053A 2N3019 2N3053 transistor
    Text: Boca Semiconductor Corp. BSC http://www.bocasemi.com M AXIM U M RATINGS Symbol Rating 2N3053 2 N 3 05 3A Unit C o lle ctor-E m itte r Voltage 1 v CEO 40 60 Vdc C o lle ctor-B ase V o lta g e VCBO 60 80 Vdc E m itter-Base V o lta g e vebo 5.0 Vdc C o lle cto r C u rre n t — C o n tin u o u s


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    PDF 2IM3053 2N3053A 2N3053, TQ-205AD) 2N3053 transistor 2n3053 2N3053 NPN transistor 2N3019 2N3053 transistor

    RCA-2N3053

    Abstract: 2N3053 rca 2N3053 1501 0647 2N3053A 17102 2n3053 RCA
    Text: E SOLID STATE 3875081 Öl G E S O LID STATE » F | 3ä 7S 0ö]T0017101 0 | 01E 17101 D 'p -Z 'J -Z H ig h -S p e e d P o w e r T ra n s is to rs 2N3053, 2N3053A File Number 960 General-Purpose, Medium-Power


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    PDF 2N3053, 2N3053A RCA-2N3053 T0-205AD 0Q171D4 CS-4I929R2 2N3053A 2N3053 rca 2N3053 1501 0647 17102 2n3053 RCA

    2N2222 - to-92

    Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
    Text: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124


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    PDF 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2222 - to-92 2N2222A TO-92 JC547 2n2222 to92 2N3904 TO-92 type JC500, Jc501

    ic 23721

    Abstract: 23732 23721
    Text: Micmsemi PNP Transistors | Part Number ' PNP JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 2N5094 2N5096 2N3053 2N3774 2N3778 2N3245 2N3775 2N3779 2N3776 2N3780 2N3777 2N3781 2N3660 2N3661 2N3782 2N3719 2N3867 2N3867S


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    PDF JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 ic 23721 23732 23721

    Untitled

    Abstract: No abstract text available
    Text: 30E D • 7 c15ci237 0G311SS M rrz SGS-THOMSON RfflO g[H](5 i[L[E(gïï^ [MOOi ^ 7 # 2N3053 S G S-THOMSON AMPLIFIERS AND SWITCH DESCRIPTIO N The 2N3053 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-39 metal case, intended for me­ dium-current switching and amplifier applications.


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    PDF 0G311SS 2N3053 2N3053

    2n3019 equivalent

    Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


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    PDF 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31

    BCY56

    Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 BCY59A 2N1131 2N1132 2N4037 BC177

    2N6178

    Abstract: 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053


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    PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N6178 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102

    BSY52

    Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    2N6180

    Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037


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    PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N6180 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178

    BCY78

    Abstract: BC107 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59
    Text: N P N LOW LEV EL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177