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    NGTB40N120 Price and Stock

    onsemi NGTB40N120FL3WG

    IGBT TRENCH FS 1200V 160A TO247
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    DigiKey NGTB40N120FL3WG Tube 2,898 1
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    Mouser Electronics NGTB40N120FL3WG 42
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    Arrow Electronics NGTB40N120FL3WG 8,820 17 Weeks 30
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    Newark NGTB40N120FL3WG Bulk 90
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    TME NGTB40N120FL3WG 112 1
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    Avnet Asia NGTB40N120FL3WG 17 Weeks 240
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    Win Source Electronics NGTB40N120FL3WG 38,000
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    onsemi NGTB40N120IHRWG

    IGBT 1200V 80A 384W TO247
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    DigiKey NGTB40N120IHRWG Tube 31 1
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    Rochester Electronics NGTB40N120IHRWG 74 1
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    Flip Electronics NGTB40N120IHRWG 28
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    onsemi NGTB40N120SWG

    IGBT 40A 1200V TO-247
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    onsemi NGTB40N120LWG

    IGBT 1200V 40A TO247
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    Flip Electronics NGTB40N120L3WG

    IGBT TRENCH FS 1200V 160A TO247
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    DigiKey NGTB40N120L3WG Tube 20
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    NGTB40N120 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB40N120FL2WAG ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT FIELD STOP 1200V TO247-4 Original PDF
    NGTB40N120FL2WG ON Semiconductor IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 80A 535W TO247 Original PDF
    NGTB40N120FL3WG ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 160A TO247 Original PDF
    NGTB40N120FLWG On Semiconductor NGTB40N120 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF
    NGTB40N120IHLWG On Semiconductor NGTB40N120 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF
    NGTB40N120IHRWG On Semiconductor NGTB40N120I - IGBT 1200V 40A FS2-RC Induction Heating Original PDF
    NGTB40N120L3WG ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 160A TO247 Original PDF
    NGTB40N120LWG On Semiconductor NGTB40N120 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF
    NGTB40N120S3WG ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1.2KV 40A TO247-3 Original PDF
    NGTB40N120SWG ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 40A 1200V TO-247 Original PDF

    NGTB40N120 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original
    NGTB40N120IHRWG NGTB40N120IHR/D PDF

    40n120

    Abstract: 40N120FL NGTB40N120FLWG MC 140 transistor NGTB40N120
    Text: NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120FLWG NGTB40N120FLW/D 40n120 40N120FL MC 140 transistor NGTB40N120 PDF

    NGTB40N120IHLWG

    Abstract: 40N120IHL BIPOLAR TRANSISTOR
    Text: NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120IHLWG NGTB40N120IHLW/D 40N120IHL BIPOLAR TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120FLWG NGTB40N120FLW/D PDF

    40N120IHR

    Abstract: No abstract text available
    Text: NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original
    NGTB40N120IHRWG NGTB40N120IHR/D 40N120IHR PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120FLWG NGTB40N120FLW/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    NGTB40N120LWG

    Abstract: 40N120L
    Text: NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is


    Original
    NGTB40N120LWG NGTB40N120L/D 40N120L PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120IHLWG NGTB40N120IHLW/D PDF

    G40N120FL2

    Abstract: No abstract text available
    Text: NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTG40N120FL2WG NGTG40N120FL2W/D G40N120FL2 PDF