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    40N120FL Search Results

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    40N120FL Price and Stock

    onsemi NGTB40N120FL3WG

    IGBT TRENCH FS 1200V 160A TO247
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    DigiKey NGTB40N120FL3WG Tube 2,898 1
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    Avnet Americas NGTB40N120FL3WG Tube 17 Weeks 240
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    Mouser Electronics NGTB40N120FL3WG 42
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    Newark NGTB40N120FL3WG Bulk 90
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    TME NGTB40N120FL3WG 112 1
    • 1 $8.56
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    ComSIT USA NGTB40N120FL3WG 10
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    Richardson RFPD NGTB40N120FL3WG 180
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    Avnet Asia NGTB40N120FL3WG 17 Weeks 240
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    Avnet Silica NGTB40N120FL3WG 5,130 18 Weeks 30
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    Win Source Electronics NGTB40N120FL3WG 38,000
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    Micro Commercial Components MIW40N120FLA-BP

    IGBT 1200V 40A,TO-247AB
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    DigiKey MIW40N120FLA-BP Tube 1,656 1
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    Mouser Electronics MIW40N120FLA-BP 1,776
    • 1 $11.13
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    onsemi NGTB40N120FLWG

    IGBT 1200V 40A TO247
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    DigiKey NGTB40N120FLWG Tube
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    onsemi NGTB40N120FL2WG

    IGBT TRENCH FS 1200V 80A TO247
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    DigiKey NGTB40N120FL2WG Tube 1
    • 1 $7.49
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    • 100 $4.32767
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    Avnet Americas NGTB40N120FL2WG Tube 19 Weeks 210
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    Mouser Electronics NGTB40N120FL2WG
    • 1 $6.42
    • 10 $5.97
    • 100 $3.92
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    Rochester Electronics NGTB40N120FL2WG 2 1
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    ComSIT USA NGTB40N120FL2WG 50
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    Richardson RFPD NGTB40N120FL2WG 180
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    Avnet Asia NGTB40N120FL2WG 1,050 19 Weeks 210
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    EBV Elektronik NGTB40N120FL2WG 21 Weeks 30
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    Win Source Electronics NGTB40N120FL2WG 34,662
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    onsemi NGTG40N120FL2WG

    IGBT 1200V 40A TO-247
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    Rochester Electronics NGTG40N120FL2WG 1
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    40N120FL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    40n120

    Abstract: 40N120FL NGTB40N120FLWG MC 140 transistor NGTB40N120
    Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120FLWG NGTB40N120FLW/D 40n120 40N120FL MC 140 transistor NGTB40N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120FLWG NGTB40N120FLW/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120FLWG NGTB40N120FLW/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF