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    N322A Search Results

    N322A Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    813N322AKI-02LF Renesas Electronics Corporation Jitter Attenuator & Femtoclock NG® Multiplier Visit Renesas Electronics Corporation
    813N322AKI-02LFT Renesas Electronics Corporation Jitter Attenuator & Femtoclock NG® Multiplier Visit Renesas Electronics Corporation
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    N322A Price and Stock

    Toshiba America Electronic Components GT50N322A

    IGBT 1000V 50A TO3P
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    DigiKey GT50N322A Tray 52 1
    • 1 $5.54
    • 10 $3.7
    • 100 $2.6582
    • 1000 $2.18749
    • 10000 $2.18749
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    Avnet Americas GT50N322A Tube 24 Weeks 50
    • 1 -
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    • 100 $2.6075
    • 1000 $2.3625
    • 10000 $2.3625
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    Mouser Electronics GT50N322A 77
    • 1 $5.28
    • 10 $3.58
    • 100 $2.65
    • 1000 $2.18
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    Rochester Electronics LLC ISL9N322AS3ST

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N322AS3ST Bulk 293
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    • 1000 $1.03
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    Siemens 3VA62255HN322AA0

    BRKR 3VA62 3P 250A 35KA ETU3-LSI
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    DigiKey 3VA62255HN322AA0 Bulk 1
    • 1 $2366.5
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    Mouser Electronics 3VA62255HN322AA0
    • 1 $2366.5
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    • 100 $2366.5
    • 1000 $2366.5
    • 10000 $2366.5
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    Siemens 3VA64406HN322AA0

    BRKR 3VA64 3P 400A 65KA ETU3-LSI
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    DigiKey 3VA64406HN322AA0 Box 1
    • 1 $6348.58
    • 10 $6348.58
    • 100 $6348.58
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    Mouser Electronics 3VA64406HN322AA0
    • 1 $8165.35
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    • 100 $8165.35
    • 1000 $8165.35
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    Siemens 3VA63255HN322AA0

    BRKR 3VA63 3P 250A 35KA ETU3-LSI
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    DigiKey 3VA63255HN322AA0 Bulk 1
    • 1 $3195.53
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    • 100 $3195.53
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    Mouser Electronics 3VA63255HN322AA0
    • 1 $3195.53
    • 10 $3195.53
    • 100 $3195.53
    • 1000 $3195.53
    • 10000 $3195.53
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    Find more N322A price and stock on Findchips.com

    N322A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    n322ad

    Abstract: No abstract text available
    Text: PWM Optimized N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AD3ST 970pF O-252 n322ad PDF

    N322AP

    Abstract: ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS
    Text: N322AP3/N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AP3/ISL9N322AS3ST 970pF O-263AB O-220AB N322AP ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS PDF

    n322ad

    Abstract: ISL9N322AD3ST N-322 N322 16E-3
    Text: PWM Optimized N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AD3ST 970pF O-252 n322ad ISL9N322AD3ST N-322 N322 16E-3 PDF

    N322AS

    Abstract: No abstract text available
    Text: N322AP3/N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AP3/ISL9N322AS3ST 970pF O-263AB N322AS PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF