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    n322ad

    Abstract: No abstract text available
    Text: PWM Optimized N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AD3ST 970pF O-252 n322ad PDF

    n322ad

    Abstract: ISL9N322AD3ST N-322 N322 16E-3
    Text: PWM Optimized N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N322AD3ST 970pF O-252 n322ad ISL9N322AD3ST N-322 N322 16E-3 PDF