SUD45N05-20L
Abstract: No abstract text available
Text: SUD45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.018 @ VGS = 10 V 30 0.020 @ VGS = 4.5 V 30 VDS (V) 50 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
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SUD45N05-20L
O-252
S-31724--Rev.
18-Aug-03
SUD45N05-20L
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sud*45N05-20L
Abstract: SUD45N05-20L
Text: SUD45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.018 @ VGS = 10 V 30 0.020 @ VGS = 4.5 V 30 VDS (V) 50 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
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SUD45N05-20L
O-252
SUD45N05-20L
08-Apr-05
sud*45N05-20L
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Untitled
Abstract: No abstract text available
Text: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V
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SiS496EDNT
SiS496EDNT-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V
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SiS496EDNT
SiS496EDNT-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SiR464DP
Abstract: No abstract text available
Text: New Product SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0038 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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SiR464DP
SiR464DP-T1-GE3
11-Mar-11
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SI7788DP-T1-GE3 PowerPAK SO-8 VISHAY
Abstract: No abstract text available
Text: New Product Si7788DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0041 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si7788DP
Si7788DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI7788DP-T1-GE3 PowerPAK SO-8 VISHAY
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SiR464DP
Abstract: sir464
Text: New Product SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0038 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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SiR464DP
SiR464DP-T1-GE3
18-Jul-08
sir464
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SIR464
Abstract: No abstract text available
Text: New Product SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0038 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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SiR464DP
SiR464DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIR464
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Untitled
Abstract: No abstract text available
Text: New Product SiR818ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0025 at VGS = 10 V 50 0.0030 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 39 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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SiR818ADP
SiR818ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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70271
Abstract: SUD45N05-20L
Text: SUD45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.018 @ VGS = 10 V "30 0.020 @ VGS = 4.5 V "30 VDS (V) 50 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45N05-20L S N-Channel MOSFET
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SUD45N05-20L
O-252
S-57247--Rev.
23-Mar-98
70271
SUD45N05-20L
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Untitled
Abstract: No abstract text available
Text: SQD50N03-4m3 www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.0032 ID (A) • 100 % Rg and UIS Tested 50 Configuration
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SQD50N03-4m3
AEC-Q101
O-252
SQD50N03-4m3-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SiRA66DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0023 at VGS = 10 V 50 0.0031 at VGS = 4.5 V 50 Qg (Typ.) 19.2 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 S 6.15 mm
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SiRA66DP
SiRA66DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA02DP
SiRA02DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 50 0.017 at VGS = 4.5 V 43 VDS (V) 30 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUD50N03-11
O-252
SUD50N03-11-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET
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Si7748DP
Si7748DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si7748DP-T1-GE3
Abstract: Si7748DP si7748
Text: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET
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Si7748DP
Si7748DP-T1-GE3
11-Mar-11
si7748
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Untitled
Abstract: No abstract text available
Text: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET
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Si7748DP
Si7748DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET
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Si7748DP
Si7748DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiE800DF
Abstract: No abstract text available
Text: SiE800DF New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES ID (A)a rDS(on) (W) Silicon Limit Package Limit 0.0072 @ VGS = 10 V 90 50 0.0115 @ VGS = 4.5 V 73 50 VDS (V) 30 Qg (Typ) 12 nC Package Drawing PolarPAK 10 D 9 G 8 S
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SiE800DF
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: STL220N3LLH7 N-channel 30 V, 0.00085 Ω typ., 50 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - target specification Features Order code VDS RDS on max ID STL220N3LLH7 30 V 0.0011 Ω 50 A • Very low on-resistance 1
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STL220N3LLH7
AM15540v2
DocID024732
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SUD50N03-11
Abstract: No abstract text available
Text: SUD50N03-11 New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A)a 0.011 @ VGS = 10 V 50 0.017 @ VGS = 4.5 V 43 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-11 S N-Channel MOSFET
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SUD50N03-11
O-252
S-01329--Rev.
12-Jun-00
SUD50N03-11
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D47F
Abstract: IRFH8311 PQFN footprint d020d
Text: PD - 97735C IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters
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97735C
IRFH8311PbF
D47F
IRFH8311
PQFN footprint
d020d
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Untitled
Abstract: No abstract text available
Text: PD - 97735A IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters
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7735A
IRFH8311PbF
IRFH8311TRPBF
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Untitled
Abstract: No abstract text available
Text: STL220N3LLH7 N-channel 30 V, 0.00081 Ω typ., 50 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - preliminary data Features Order code VDS RDS on max ID STL220N3LLH7 30 V 0.0011 Ω 50 A • Very low on-resistance 1 • Very low Qg
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STL220N3LLH7
AM15540v2
DocID024732
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