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    Text: New Product SiR818ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0025 at VGS = 10 V 50 0.0030 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 39 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SiR818ADP SiR818ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF