D47F
Abstract: IRFH8311 PQFN footprint d020d
Text: PD - 97735C IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters
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97735C
IRFH8311PbF
D47F
IRFH8311
PQFN footprint
d020d
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Untitled
Abstract: No abstract text available
Text: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters Features and Benefits
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IRFH8316PbF
IRFH8316TRPBF
IRFH8316TR2PBF
796mH,
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IRFH5250
Abstract: IRFH5250TRPBF
Text: PD -96265B IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET
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-96265B
IRFH5250PbF
IRFH5250
IRFH5250TRPBF
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dc brushed motor 60v
Abstract: No abstract text available
Text: PD - 97787 StrongIRFET IRFH7004PbF HEXFET Power MOSFET Applications l l l l l l l l l Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies
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IRFH7004PbF
TD-020D
dc brushed motor 60v
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IRG7PH42UD1M
Abstract: 30A, 600v RECTIFIER DIODE
Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode
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IRG7PH42UD1M
1300Vpk
D-020D
IRG7PH42UD1M
30A, 600v RECTIFIER DIODE
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IRFHM792TRPBF
Abstract: IRFHM792
Text: PD - 96368A IRFHM792TRPbF IRFHM792TR2PbF VDS Vgs max RDS on max (@VGS = 10V) Qg typ 100 V ± 20 V 195 mΩ 4.2 ID 3.4 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET TOP VIEW D 7 D 8 D 6 D 5 S nC h A G S G D D D 1 S 2 G 3 S 4 G D D D PQFN Dual 3.3X3.3 mm Applications
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6368A
IRFHM792TRPbF
IRFHM792TR2PbF
IRFHM792TR2PBF
IRFHM792
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IRFHS8342
Abstract: irfhs8342pbf IRFHS8342TRPBF
Text: PD - 97596B IRFHS8342PbF HEXFET Power MOSFET VDS 30 V VGS max ±20 V RDS on max 16.0 mΩ (@VGS = 10V) T OP VIEW D 1 (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 4.2 8.5 D D S G 3 G 5 D nC d D D D 2 Qg(typical) D 6 D 4 S D S S 2mm x 2mm PQFN A Applications • Control MOSFET for Buck Converters
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97596B
IRFHS8342PbF
D-020D
IRFHS8342
irfhs8342pbf
IRFHS8342TRPBF
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IRFML9244
Abstract: IRLML6344 IRLML2246 irlml0030 irlml2244 IRLML2502PbF
Text: IRLML2502PbF l l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description
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IRLML2502PbF
OT-23
IRFML9244
IRLML6344
IRLML2246
irlml0030
irlml2244
IRLML2502PbF
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IRFH7934TRPBF
Abstract: No abstract text available
Text: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits
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IRFH7934PbF
535mH,
IRFH7934TRPBF
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Untitled
Abstract: No abstract text available
Text: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)
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IRGP30B120KD-EP
O-247AD
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IRLML0060TR
Abstract: IRLML0060TRPBF
Text: PD - 97439A IRLML0060TRPbF HEXFET Power MOSFET VDS 60 V VGS Max ± 16 V RDS on max 92 m 116 m (@VGS = 10V) RDS(on) max (@VGS = 4.5V) * ' 6 Micro3TM (SOT-23) IRLML0060TRPbF Application(s) •Load/ System Switch Features and Benefits Benefits
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7439A
IRLML0060TRPbF
OT-23)
AN-994.
IRLML0060TR
IRLML0060TRPBF
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IRLML5103PBF
Abstract: IRLML2246 irlml2030
Text: IRLML5103PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free HEXFET Power MOSFET G 1 VDSS = -30V 3 D
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IRLML5103PbF
OT-23
IRLML5103PBF
IRLML2246
irlml2030
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IRLH5036PBF
Abstract: No abstract text available
Text: IRLH5036PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 4.5V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 60 V 5.5 mΩ 44 1.2 nC Ω h 100 A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
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IRLH5036PbF
IRLH5036PBF
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irlhs6342pbf#2
Abstract: No abstract text available
Text: IRLHS6342PbF HEXFET Power MOSFET VDS 30 V VGS ±12 V RDS on max 15.5 mΩ (@VGS = 4.5V) Qg (typical) ID 11 (@TC (Bottom) = 25°C) 12 nC i A TOP VIEW 6 D D 1 D 2 G 3 D S D D D 5 D 4 S D D G S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application
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IRLHS6342PbF
irlhs6342pbf#2
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Untitled
Abstract: No abstract text available
Text: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
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IRF7309PbF-1
IRF7309TRPr
D-020D
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Untitled
Abstract: No abstract text available
Text: IRF7425PbF-1 HEXFET Power MOSFET VDS -20 RDS on max V 1 8 S 2 7 D S 3 6 D G 4 5 D 8.2 (@VGS = -4.5V) mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF-1 SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package
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IRF7425PbF-1
IRF7425Pefer
D-020D
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Untitled
Abstract: No abstract text available
Text: IRF7416PbF-1 HEXFET Power MOSFET VDS -30 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V 0.020 Ω 61 nC -10 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
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IRF7416PbF-1
IRF7416TRPbF-1
TD-020D
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Untitled
Abstract: No abstract text available
Text: PD - 97728 IRFTS8342PbF RDS on max 19 mΩ 29 mΩ 4.8 nC 8.2 A (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 6 V ' ±20 ' VGS HEXFET Power MOSFET * V ' 30 ' VDS TSOP-6 Applications • System/Load Switch Features and Benefits
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IRFTS8342PbF
IRFTS8342TRPBF
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRFH8202PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@TC(Bottom) = 25°C) 25 V 1.05 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET
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IRFH8202PbF
com/technical-info/appnotes/an-994
2013International
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Untitled
Abstract: No abstract text available
Text: IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS on max 58 mΩ Qg (typical) 21 nC RG (typical) 2.3 Ω 27 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
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IRFH5215PbF
IRFH5215TRPBF
IRFH5215TR2PBF
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IRF7907PBF
Abstract: No abstract text available
Text: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications
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IRF7907PbF-1
IRF7907PBF
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Untitled
Abstract: No abstract text available
Text: IRF7455PbF-1 SMPS MOSFET HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) V 0.0075 Ω 37 nC 15 A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification
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IRF7455PbF-1
D-020D
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IRG7PH35UD1MPBF
Abstract: No abstract text available
Text: IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode
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IRG7PH35UD1MPbF
1300Vpk
O-247AD
TD-020Dâ
IRG7PH35UD1MPBF
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Untitled
Abstract: No abstract text available
Text: IRLML2803PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 V 0.25 Ω 3.3 nC 1.2 A G 1 3 D S 2 Micro3 Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
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IRLML2803PbF-1
OT-23
IRLML2803TRPbF-1
OT-23)
D-020D
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