MJ11012 Search Results

MJ11012 Price and Stock

Filter by Manufacturer


onsemi MJ11012G TRANS NPN DARL 60V 30A TO204
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJ11012G	Tray	85		1	1 $9.66 10 $6.632 100 $4.9236 1000 $4.39388 10000 $4.39388	Buy Now
Avnet Americas	MJ11012G	Tray		0 Weeks, 2 Days	164	1 - 10 - 100 - 1000 $4.0683 10000 $3.8475	Buy Now
	MJ11012G	Bulk		14 Weeks, 1 Days	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MJ11012G	Tray		11 Weeks	200	1 - 10 - 100 - 1000 $4.04035 10000 $3.90567	Buy Now
Mouser Electronics	MJ11012G		109			1 $9.78 10 $6.37 100 $5.37 1000 $4.39 10000 $4.39	Buy Now
Verical	MJ11012G		300		63	1 - 10 - 100 $5.7375 1000 $5.1875 10000 $5.1875	Buy Now
	MJ11012G		270		63	1 - 10 - 100 $5.7375 1000 $5.1875 10000 $5.1875	Buy Now
	MJ11012G		252		63	1 - 10 - 100 $5.7375 1000 $5.1875 10000 $5.1875	Buy Now
	MJ11012G		250		63	1 - 10 - 100 $5.7375 1000 $5.1875 10000 $5.1875	Buy Now
	MJ11012G		200		10	1 - 10 $6.825 100 $6.019 1000 $5.551 10000 $5.551	Buy Now
	MJ11012G		167		63	1 - 10 - 100 $5.7375 1000 $5.1875 10000 $5.1875	Buy Now
Newark	MJ11012G	Bulk	11		1	1 $8.79 10 $7.53 100 $6.28 1000 $5.54 10000 $5.54	Buy Now

Onlinecomponents.com	MJ11012G		200			1 - 10 $5.25 100 $4.63 1000 $4.27 10000 $4.27	Buy Now
Quest Components	MJ11012G		10			1 $11.85 10 $7.9 100 $7.9 1000 $7.9 10000 $7.9	Buy Now
Rochester Electronics	MJ11012G		1,267		1	1 $4.88 10 $4.88 100 $4.59 1000 $4.15 10000 $4.15	Buy Now
TME	MJ11012G				1	1 $7.72 10 $6.62 100 $5.55 1000 $4.49 10000 $4.49	Get Quote
Avnet Silica	MJ11012G			12 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	MJ11012G		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	MJ11012G		200			1 - 10 $5.25 100 $4.63 1000 $4.27 10000 $4.27	Buy Now
onsemi MGSF2N02ELT1G MOSFETs NFET SOT23 20V 2.8A 85mOhm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MGSF2N02ELT1G		31,269			1 $0.43 10 $0.284 100 $0.151 1000 $0.137 10000 $0.096	Buy Now
Solid State Devices Inc (SSDI) MJ11012 Darlington Transistor, Npn, 60V, To-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:60V; Power Dissipation Pd:200W; Dc Collector Current:30A; Rf Transistor Case:To-3; No. Of Pins:2Pins; Dc Current Gain Hfe:200Hfe Rohs Compliant: Yes \|Solid State MJ11012
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	MJ11012	Bulk	13		1	1 $7.85 10 $7.85 100 $7.85 1000 $7.85 10000 $7.85	Buy Now
New Jersey Semiconductor Products, Inc. MJ11012
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MJ11012		10,783		1	1 $11.7 10 $8.775 100 $7.02 1000 $6.7275 10000 $6.7275	Buy Now
Motorola Semiconductor Products MJ11012
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MJ11012		8			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MJ11012		1			1 $9.81 10 $9.81 100 $9.81 1000 $9.81 10000 $9.81	Buy Now
	MJ11012		1			1 $15 10 $15 100 $15 1000 $15 10000 $15	Buy Now

Find more MJ11012 price and stock on Findchips.com

MJ11012 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
MJ11012	Central Semiconductor	Leaded Power Transistor Darlington	Original	PDF
MJ11012	Motorola	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS	Original	PDF
MJ11012	On Semiconductor	High-Current Complementary Silicon Transistors	Original	PDF
MJ11012	Wing Shing Computer Components	NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)	Original	PDF
MJ11012	Advanced Semiconductor	RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE	Scan	PDF
MJ11012	Mospec	POWER TRANSISTORS(30A,60-120V,200W)	Scan	PDF
MJ11012	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
MJ11012	Motorola	European Master Selection Guide 1986	Scan	PDF
MJ11012	Motorola	30 Amp Darlington Power Transistors Complementary Silicon 60-120 Volts 200 Watts	Scan	PDF
MJ11012	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
MJ11012	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MJ11012	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MJ11012	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
MJ11012	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, NPN, 30A, 60V, Pkg Style TO204	Scan	PDF

MJ11012	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF
MJ11012-D	On Semiconductor	High-Current Complementary Silicon Transistors	Original	PDF
MJ11012G	On Semiconductor	Bipolar Power T03 NPN 30A 60V	Original	PDF

MJ11012 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MJ11015G Abstract: MJ11016G mj110156 MJ11016 MJ11015 MJ11012 MJ11012G T172 MJ1101x Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc	Original	MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11015, MJ11015G MJ11016G mj110156 MJ11015 MJ11012 MJ11012G T172 MJ1101x	PDF
Mj11015 Abstract: No abstract text available Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc	Original	MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D Mj11015	PDF
MJ11016 Abstract: MJ11011 MJ11015 MJ11014 MJ11012 MJ11013 P003N MALAYSIA MJ11015 Text: MJ11011/13/15 MJ11012/14/16 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic	Original	MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016 MJ11011, MJ11011 MJ11012 MJ11013 P003N MALAYSIA MJ11015	PDF
Vcb-60V Abstract: MJ11012 Text: NPN MJ11012 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)	Original	MJ11012 Vcb-60V MJ11012	PDF
MJ11015G Abstract: MJ11016G MJ11015 MJ11016 MJ11012 MJ11012G npn darlington transistor pnp 3015 Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc	Original	MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D MJ11015G MJ11016G MJ11015 MJ11012 MJ11012G npn darlington transistor pnp 3015	PDF
Untitled Abstract: No abstract text available Text: MJ11012 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200	Original	MJ11012	PDF
mj11015 Abstract: pnp resistor mj11012 transistor MJ11016 Text: ON Semiconductort PNP High−Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — hFE = 1000 Min @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor	Original	MJ11015 MJ11012 MJ11016 pnp resistor transistor MJ11016	PDF
MJ11015G Abstract: MJ11016G MJ11015 mj110156 MJ11012 MJ11012G MJ11016 Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc	Original	MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 O-204AA MJ11015G MJ11016G MJ11015 mj110156 MJ11012 MJ11012G	PDF
MJ11015 Abstract: MJ11012 MJ11016 mj11016 mexico Text: ON Semiconductort PNP High-Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — • • hFE = 1000 Min @ IC – 20 Adc	Original	MJ11015 MJ11016 MJ11012 r14525 MJ11012/D MJ11015 MJ11012 MJ11016 mj11016 mexico	PDF
100 amp npn darlington power transistors Abstract: mj11015 MJ11016 transistor tl 187 MJ11013 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts 10 amp npn darlington power transistors MJ11016 data sheet Text: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	MJ11012 MJ11014 MJ11016 MJ11013 MJ11015 MJ11012/D* MJ11012/D 100 amp npn darlington power transistors mj11015 MJ11016 transistor tl 187 MJ11013 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts 10 amp npn darlington power transistors MJ11016 data sheet	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original		PDF

BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
mj11011 Abstract: MJ11012 DARLINGTON 20A Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A	Original	MJ11011 mj11011 MJ11012 DARLINGTON 20A	PDF
pmd10K80 Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88 Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789	Original	2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88	PDF
mj11015 Abstract: MJ11014 MJ11011 Text: r Z T S G S -T H O M MJ11011/1 3/15 MJ11012/14/16 S O N mlM MiniaMgnigCTfsiMiKe^ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016are silicon	OCR Scan	MJ11011/1 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016are MJ11011, MJ11011	PDF
mj11011 Abstract: No abstract text available Text: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP M J11013 High-C urrent Com plem entary Silicon Transistors M J11015 NPN M J11012 . . . for use as output devices in complementary general purpose amplifier applica tions. • •	OCR Scan	MJ11012/D J11013 J11015 J11012 J11014 mj11011	PDF
MJ11011 Abstract: MJ11014 Text: MJ11011/13/15 MJ11012/14/16 SGS-THOMSON MGMlLIOTIlMCt COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic	OCR Scan	MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11011, MJ11011	PDF
MJ11015 Abstract: MJ11016 MJ11014 MJ11012 k 1 transistor npn darlington transistor 200 watts motorola darlington power transistor mj11015 transistor transistor MJ11016 MJll016 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11013 High-Current Complementary Silicon Transistors MJ11015 NPN MJ11012 . . . for use as output devices in complementary general purpose amplifier applica tions. • High DC Current Gain — hpg = 1000 Min @ Iq - 20 Adc	OCR Scan	MJ11013 MJ11015 MJ11012 MJ11014 MJ11016* MJ11015 MJ11016 k 1 transistor npn darlington transistor 200 watts motorola darlington power transistor mj11015 transistor transistor MJ11016 MJll016	PDF
mj11011 Abstract: MJ11016 MJ11013 MJ11014 MJ11015 MJ11012 Variable resistor 10K ohm transistor MJ11016 Text: Æà MOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for use as output devices in complementary general purpose amplifier applications. Collector-Emitter Voltage ^C EO COIIector-Base Voltage V C BO Emitter-Base Voltage 30 AMPERE COMPLEMENTARY	OCR Scan	MJ11011 MJ11012 MJ11013 MJ11014 MJ11015 MJ11016 MJ11014 MJ11016 MJ11012 Variable resistor 10K ohm transistor MJ11016	PDF
transistor buv18a Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference" Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min	OCR Scan	MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF

Privacy Settings

MJ11012 Search Results

MJ11012 Price and Stock

onsemi MJ11012G

onsemi MGSF2N02ELT1G

Solid State Devices Inc (SSDI) MJ11012

New Jersey Semiconductor Products, Inc. MJ11012

Motorola Semiconductor Products MJ11012

MJ11012 Datasheets (17)

MJ11012 Datasheets Context Search

MJ11015G

Mj11015

MJ11016

Vcb-60V

MJ11015G

Untitled

mj11015

MJ11015G

MJ11015

100 amp npn darlington power transistors

MC68B21CP

sn76131

tip122 tip127 audio amp schematic

transistor mosfet buv18a

BUV48I

mj11011

pmd10K80

mj11015

mj11011

MJ11011

MJ11015

mj11011

transistor buv18a

triac zd 607