IXTH Search Results

IXTH Price and Stock

Filter by Manufacturer


Littelfuse Inc IXTH02N250 MOSFET N-CH 2500V 200MA TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH02N250	Tube	1,091		1	1 $18.78 10 $18.78 100 $11.73333 1000 $18.78 10000 $18.78	Buy Now
Newark	IXTH02N250	Bulk	300		1	1 $16.24 10 $13.44 100 $10.64 1000 $10.21 10000 $10.21	Buy Now
Quest Components	IXTH02N250		199			1 $24.44 10 $24.44 100 $19.552 1000 $19.552 10000 $19.552	Buy Now
Chip1Stop	IXTH02N250	Tube	300			1 $15.9 10 $12 100 $10.9 1000 $9.62 10000 $9.62	Buy Now
CoreStaff Co Ltd	IXTH02N250		249			1 $17.395 10 $12.22 100 $12.22 1000 $12.22 10000 $12.22	Buy Now
Littelfuse Inc IXTH110N25T MOSFET N-CH 250V 110A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH110N25T	Tube	521		1	1 $10.82 10 $10.82 100 $6.44133 1000 $5.09949 10000 $5.09949	Buy Now
Newark	IXTH110N25T	Bulk	300		1	1 $9.19 10 $9.19 100 $5.77 1000 $5.26 10000 $5.26	Buy Now
Littelfuse Inc IXTH150N15X4 MOSFET N-CH 150V 150A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH150N15X4	Tube	388		1	1 $11.9 10 $11.9 100 $7.604 1000 $11.9 10000 $11.9	Buy Now
Littelfuse Inc IXTH60N20L2 MOSFET N-CH 200V 60A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH60N20L2	Tube	333		1	1 $17.87 10 $17.87 100 $11.77267 1000 $17.87 10000 $17.87	Buy Now
Littelfuse Inc IXTH260N055T2 MOSFET N-CH 55V 260A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH260N055T2	Tube	294		1	1 $7.82 10 $7.82 100 $4.84833 1000 $4.048 10000 $4.048	Buy Now
Arrow Electronics	IXTH260N055T2		125	27 Weeks	1	1 $4.202 10 $4.202 100 $3.444 1000 $3.337 10000 $3.337	Buy Now

Find more IXTH price and stock on Findchips.com

IXTH Datasheets (389)

Part	Manufacturer	Description	Datasheet Type	PDF
IXTH02N250	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 2500V 200MA TO247	Original	PDF
IXTH02N450HV	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 4500V 0.2A TO247HV	Original	PDF
IXTH04N300P3HV	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 2000V TO 3000V POLAR3 POWER MOSF	Original	PDF
IXTH06N220P3HV	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH	Original	PDF
IXTH100N25P	IXYS	Transistor Mosfet N-CH 250V 100A 3TO-247	Original	PDF
IXTH102N15T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-247	Original	PDF
IXTH102N20T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 102A TO-247	Original	PDF
IXTH10N100	IXYS	1000V HiPerFET power MOSFET	Original	PDF
IXTH10N100	IXYS	MegaMOS Power MOSFETs	Scan	PDF
IXTH10N100	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IXTH10N100	Unknown	FET Data Book	Scan	PDF
IXTH10N100A	Unknown	FET Data Book	Scan	PDF
IXTH10N100D	IXYS	Three phase full bridge with Trench MOSFETs in DCB isolated high current package	Original	PDF
IXTH10N100D	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A TO-247	Original	PDF

IXTH10N100D2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10A TO-247	Original	PDF
IXTH10N60	IXYS	High Voltage Power MOSFETs	Scan	PDF
IXTH10N60	IXYS	High Voltage Power MOSFETs	Scan	PDF
IXTH10N60	Sharp	600 V, 10 A, sourse-drain diode	Scan	PDF
IXTH10N60A	IXYS	High Voltage Power MOSFETs	Scan	PDF
IXTH10N60A	IXYS	High Voltage Power MOSFETs	Scan	PDF

...

IXTH Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXTT16P60P Abstract: IXTH16P60P 16P60P Text: Preliminary Technical Information PolarPTM Power MOSFET IXTH16P60P IXTT16P60P VDSS ID25 = = ≤ RDS on TO-268 (IXTT) P-Channel Enhancement Mode Avalanche Rated G Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH16P60P IXTT16P60P O-268 100ms 16P60P IXTT16P60P IXTH16P60P 16P60P	PDF
10N90 Abstract: No abstract text available Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient	Original	12N90 O-204 O-247 O-247 O-204 10N90	PDF
60n10 Abstract: IXTH60N10 Text: Advance Technical Information IXTH 60N10 IXTT 60N10 HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 60 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ	Original	60N10 TJM15 O-268 728B1 123B1 728B1 065B1 60n10 IXTH60N10	PDF
60N15 Abstract: No abstract text available Text: Advance Technical Information Standard Power MOSFET VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ IXTH 60N15 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150	Original	60N15 O-247 728B1 123B1 728B1 065B1 60N15	PDF
60N25 Abstract: D2560 UPS SIEMENS Text: Advance Technical Information IXTH 60N25 Standard Power MOSFET VDSS = 250 V ID cont = 60 A Ω RDS(on) = 46 mΩ N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250	Original	60N25 728B1 123B1 728B1 065B1 60N25 D2560 UPS SIEMENS	PDF
24P20 Abstract: No abstract text available Text: Standard Power MOSFET IXTH 24P20 P-Channel Enhancement Mode Avalanche Rated RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -200 V VGS Continuous ±20 V VGSM Transient ±30 V A ID25 TC = 25°C	Original	24P20 O-247 728B1 123B1 728B1 065B1 24P20	PDF
50n30 Abstract: N-channel MOSFET to-247 50a IXTH50N30 TO-247 weight Text: Advance Technical Information IXTH 50N30 IXTT 50N30 High Current Power MOSFET VDSS ID25 = 300 V = 50 A Ω = 65 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	50N30 O-247 O-268 728B1 123B1 728B1 065B1 50n30 N-channel MOSFET to-247 50a IXTH50N30 TO-247 weight	PDF
16p20 Abstract: ixth 16p20 Text: Standard Power MOSFET IXTH 16P20 P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = -200 V = -16 A = 0.16 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	16P20 O-247 728B1 123B1 728B1 065B1 16p20 ixth 16p20	PDF
10P60 Abstract: 125OC Text: IXTH 10P60 VDSS = -600 V ID25 = -10 A RDS on = 1Ω Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -600 V VGS Continuous ±20	Original	10P60 O-247 -300V 728B1 125OC	PDF
75N10 Abstract: No abstract text available Text: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V	Original	67N10 75N10 O-204 O-247 O-204 O-247 75N10	PDF
40N30 Abstract: IXTH40N30 IXTM35N30 IXTM40N30 40AA Text: VDSS MegaMOSTMFET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C	Original	35N30 40N30 O-204 O-247 O-204 40N30 IXTH40N30 IXTM35N30 IXTM40N30 40AA	PDF
IXTH03N400 Abstract: IXTV03N400S PLUS220SMD 03N400 Text: Advance Technical Information IXTH03N400 IXTV03N400S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4000 V VGSS Continuous	Original	IXTH03N400 IXTV03N400S 300mA O-247 03N400 IXTH03N400 IXTV03N400S PLUS220SMD	PDF
IXTP450P2 Abstract: IXTH450P2 IXTQ450P2 Text: Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 PolarP2TM Power MOSFET VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings	Original	IXTP450P2 IXTQ450P2 IXTH450P2 400ns O-220AB 338B2 IXTP450P2 IXTH450P2 IXTQ450P2	PDF
t16n50 Abstract: 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250 Text: Advance Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH16N50D2 IXTT16N50D2 O-247 O-247) O-268 100ms 16N50D2 t16n50 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250	PDF

IXTP10P50P Abstract: 10P50P IXTH10P50P IXTH10P50 Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P S G D TAB D D(TAB) S G Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500	Original	O-263 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-247 O-220 100ms 10P50P IXTH10P50	PDF
10N100D Abstract: DSA003705 Text: Advance Technical Information High Voltage MOSFET N-Channel, Depletion Mode VDSS = 1000 V = 10 A ID25 RDS on = 1.4 Ω IXTH 10N100D IXTT 10N100D TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C	Original	10N100D 10N100D O-247 O-247 O-268 O-268 DSA003705	PDF
52P10p Abstract: No abstract text available Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS	Original	O-263 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P O-247 O-220 100ms 52P10p	PDF
22N50P Abstract: IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P Text: PolarHVTM Power MOSFET IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS N-Channel Enhancement Mode Avalanche Rated = 500 V = 22 A ≤ 270 mΩ Ω VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	22N50P 22N50PS O-247 PLUS220 IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P	PDF
ADSP-210xx Abstract: IXI1222 IXI1688S ixthos 741G ADSP-2101 IXI1204 IXI1210 IXI1241 IXI1688P Text: Ixthos, Inc., 741-G Miller Drive SE, Leesburg, VA 20175 phone 703 779-7800 fax (703) 779-7805 email ixthos@ixthos.com website: www.ixthos.com Ixthos has provided commercial-off-the-shelf (COTS) integrated hardware and software solutions for the Analog Devices floating point DSP family (ADSP210xx) since 1991. The	Original	741-G ADSP210xx) 2106x ADSP-210xx IXI1222 IXI1688S ixthos 741G ADSP-2101 IXI1204 IXI1210 IXI1241 IXI1688P	PDF
T1N200 Abstract: No abstract text available Text: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000	Original	IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 T1N200	PDF
Untitled Abstract: No abstract text available Text: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500	OCR Scan	IXTH/IXTM21N50 IXTH/IXTM24N50 O-247 21N50 24N50 4bflb22b	PDF
Untitled Abstract: No abstract text available Text: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C	OCR Scan	11N80 13N80 11N80 13N80 O-204 O-247 IXTM13N80	PDF
IXTH24N45 Abstract: No abstract text available Text: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient	OCR Scan	0D003S5 IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 O-204 O-247 IXTH24N50, IXTM24N50,	PDF
15N60 Abstract: IXTM15N60 Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r	OCR Scan	4bflb22b D00034Ö IXTH15N60, IXTM15N60, IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 50-600V, O-247 15N60	PDF

Privacy Settings

IXTH Search Results

IXTH Price and Stock

Littelfuse Inc IXTH02N250

Littelfuse Inc IXTH110N25T

Littelfuse Inc IXTH150N15X4

Littelfuse Inc IXTH60N20L2

Littelfuse Inc IXTH260N055T2

IXTH Datasheets (389)

IXTH Datasheets Context Search

IXTT16P60P

10N90

60n10

60N15

60N25

24P20

50n30

16p20

10P60

75N10

40N30

IXTH03N400

IXTP450P2

t16n50

IXTP10P50P

10N100D

52P10p

22N50P

ADSP-210xx

T1N200

Untitled

Untitled

IXTH24N45

15N60