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Micro Commercial Components MSJPF11N80A-BP N-CHANNEL MOSFET, TO-220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJPF11N80A-BP	Tube	5,000		1	1 $3.9 10 $2.583 100 $3.9 1000 $1.7675 10000 $1.7675	Buy Now
Mouser Electronics	MSJPF11N80A-BP		4,985			1 $3.55 10 $2.42 100 $1.81 1000 $1.77 10000 $1.77	Buy Now
Micro Commercial Components MSJP11N80A-BP N-CHANNEL MOSFET, TO-220AB(H)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJP11N80A-BP	Tube	4,992		1	1 $4.76 10 $3.151 100 $4.76 1000 $1.72391 10000 $1.7125	Buy Now
Mouser Electronics	MSJP11N80A-BP		5,000			1 $4.16 10 $3.12 100 $2.24 1000 $1.72 10000 $1.72	Buy Now
Vishay Siliconix SIHD11N80AE-T4-GE3 N-CHANNEL 800V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHD11N80AE-T4-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.725	Buy Now
Vishay Siliconix SIHD11N80AE-GE3 MOSFET N-CH 800V 8A TO252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHD11N80AE-GE3	Tube	2,659		1	1 $2.53 10 $2.53 100 $1.16373 1000 $0.88893 10000 $0.725	Buy Now
Infineon Technologies AG SPA11N80C3XKSA1 MOSFET N-CH 800V 11A TO220-FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA11N80C3XKSA1	Tube	2,433		1	1 $3.85 10 $3.85 100 $3.85 1000 $1.35225 10000 $1.34075	Buy Now
Avnet Americas	SPA11N80C3XKSA1	Bulk		16 Weeks, 3 Days	1	1 $3.55 10 $2.65 100 $1.86 1000 $1.39 10000 $1.39	Buy Now
Newark	SPA11N80C3XKSA1	Bulk	625		1	1 $1.16 10 $1.16 100 $1.16 1000 $1.16 10000 $1.16	Buy Now
EBV Elektronik	SPA11N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SPA11N80C3XKSA1		12,400			1 - 10 - 100 $1.5675 1000 $1.3146 10000 $1.3146	Buy Now

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11N80 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
11n80 Abstract: 13N80 TEST14 D-68623 Text: VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOSTMFET I D25 RDS on 11 A 0.95 Ω 13 A 0.80 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS	Original	PDF	11N80 13N80 O-247 11N80 13N80 O-204 O-204 TEST14 D-68623
MOSFET 11N80 Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	11N80 13N80 14N80 15N80 MOSFET 11N80 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
11N80 Abstract: 13N80 IXFH13N80 Text: HiPerFETTM Power MOSFETs IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 11N80 13N80 11 13	Original	PDF	11N80 13N80 11N80 13N80 IXFH13N80
11n80c3 Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80 Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type 11N80C3 Package P-TO247	Original	PDF	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11n80c3 Q67040-S4440 11n80c SPW11N80C3 80011a 11n80
11n80c3 Abstract: SPA11N80C3 Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3
SPA11N80C3 Abstract: No abstract text available Text: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated	Original	PDF	SPA11N80C3 P-TO220-3-31 11N80C3 P-TO220-3-31 Q67040-S4439 SPA11N80C3
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS VGSM Continuous Transient	Original	PDF	11N80 13N80
11n80c3 Abstract: No abstract text available Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPA11N80C3 PG-TO220-3 11N80C3 11n80c3
11N80C3 Abstract: No abstract text available Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	PDF	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3 11N80C3
MOSFET 11N80c3 Abstract: MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPW11N80C3 PG-TO247-3 11N80C3 MOSFET 11N80c3 MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R
MOSFET 11N80c3 Abstract: 11N80 Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPA11N80C3 PG-TO220-3 11N80C3 MOSFET 11N80c3 11N80
Untitled Abstract: No abstract text available Text: 11N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package	Original	PDF	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3
11N80C3 Abstract: 11n80c Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4438 11N80C3 11n80c
Q67040-S4440 Abstract: 11N80C3 11N8 Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code Marking	Original	PDF	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 Q67040-S4440 11N80C3 11N8

11n80c3 Abstract: No abstract text available Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPA11N80C3 PG-TO220-3 11N80C3 11n80c3
0-80V Abstract: No abstract text available Text: MegaMOSTMFET IXTH 13N80 IXTM 13N80 VDSS = 800 V = 13 A ID25 RDS on = 0.80 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient	Original	PDF	13N80 13N80 O-247 O-204 O-204 O-247 100ms 0-80V
Untitled Abstract: No abstract text available Text: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C	OCR Scan	PDF	11N80 13N80 11N80 13N80 O-204 O-247 IXTM13N80
11n80 Abstract: No abstract text available Text: p V DSS IXTH/IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOS FET ^D25 DS on 11 A 0.95 Î2 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V 'o s s Tj = 25°C to 150°C 800 V V«, Tj = 25°C to 150°C ; Ras = 1 M£i 800 V VGS	OCR Scan	PDF	11N80 13N80 O-247 O-204 C2-67
MOSFET 11N80 Abstract: 11N80 MOSFET 14n80 ns800 13n80 Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C	OCR Scan	PDF	11N80 13N80 14N80 15N80 MOSFET 11N80 MOSFET 14n80 ns800
11n80 Abstract: No abstract text available Text: HiPerFET Power MOSFETs ixfh/ixfm 11 nso IXFH/IXFM13 N80 Symbol Test Conditions VOSS Tj = 25°C to 150°C Maximum Ratings 800 V Voan Tj = 25°C to 150°C; R as = 1 MQ 800 V VGS V QSM Continuous T ransient ±20 ±30 V V U Tc -. 25 :,C 11N80 13N80 11 13 A	OCR Scan	PDF	IXFH/IXFM13 11N80 13N80 13N80 O-247
mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	PDF	100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	PDF	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	PDF	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

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11N80 Search Results

11N80 Price and Stock

Micro Commercial Components MSJPF11N80A-BP

Micro Commercial Components MSJP11N80A-BP

Vishay Siliconix SIHD11N80AE-T4-GE3

Vishay Siliconix SIHD11N80AE-GE3

Infineon Technologies AG SPA11N80C3XKSA1

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11n80

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75N1

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