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    IXTH03N400

    Abstract: IXTV03N400S PLUS220SMD 03N400
    Text: Advance Technical Information IXTH03N400 IXTV03N400S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4000 V VGSS Continuous


    Original     		IXTH03N400 IXTV03N400S 300mA O-247 03N400 IXTH03N400 IXTV03N400S PLUS220SMD PDF

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    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage Power MOSFETs VDSS ID25 IXTH03N400 IXTV03N400S RDS on = = ≤ 4000V 300mA Ω 290Ω N-Channel Enhancement Mode Fast Intrinsic Rectifier TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTH03N400 IXTV03N400S 300mA O-247 03N400 PDF

    IXTV03N400S

    Abstract: IXTH03N400 03N400 03n40
    Text: Preliminary Technical Information IXTH03N400 IXTV03N400S High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Rectifier 4000V 300mA Ω 290Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH03N400 IXTV03N400S 300mA O-247 PLUS220SMD O-247) PLUS220) 150mA 03N400 IXTV03N400S 03n40 PDF