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IXYS Corporation IXGH30N60C3D1 IGBT 600V 60A 220W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N60C3D1	Tube	1,377		1	1 $6.96 10 $6.96 100 $4.278 1000 $3.48663 10000 $3.48663	Buy Now
Mouser Electronics	IXGH30N60C3D1		307			1 $6.07 10 $5.88 100 $4.28 1000 $3.49 10000 $3.49	Buy Now
TTI	IXGH30N60C3D1	Tube	360		30	1 - 10 - 100 $4.24 1000 $4.24 10000 $4.24	Buy Now
IXYS Corporation IXGH30N120B3D1 IGBT 1200V 300W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N120B3D1	Tube	2		1	1 $10.68 10 $10.68 100 $7.97433 1000 $7.97433 10000 $7.97433	Buy Now
Mouser Electronics	IXGH30N120B3D1		96			1 $12.82 10 $10.92 100 $9.56 1000 $7.97 10000 $7.97	Buy Now
TTI	IXGH30N120B3D1	Tube			300	1 - 10 - 100 - 1000 $8.63 10000 $8.63	Buy Now
TME	IXGH30N120B3D1				1	1 $11.06 10 $8.77 100 $7.89 1000 $7.89 10000 $7.89	Get Quote
IXYS Corporation IXGH30N60A IGBT 600V 50A 200W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N60A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXGH30N60A		29			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGH30N60B IGBT 600V 60A 200W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH30N60B2 IGBT 600V 70A 190W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N60B2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXGH30N60B2		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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IXGH30 Datasheets (28)

Part	Manufacturer	Description	Datasheet Type	PDF
IXGH30B60BD1	IXYS	HiPerFASTTM IGBT with Diode	Original	PDF
IXGH30H30	IXYS	300V HiPerFET IGBT	Original	PDF
IXGH30N120B3D1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 300W TO247AD	Original	PDF
IXGH30N120C3H1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 48A 250W TO247AD	Original	PDF
IXGH30N30	IXYS	Hiperfast IGBT	Original	PDF
IXGH30N50	IXYS	IGBT 30 Amps, 500-600 Volts	Scan	PDF
IXGH30N50	IXYS	Power MOSIGBTs	Scan	PDF
IXGH30N50A	IXYS	Power MOSIGBTs	Scan	PDF
IXGH30N60	IXYS	Low Vce(sat) IGBT High Speed IGBT	Original	PDF
IXGH30N60	IXYS	IGBT 30 Amps, 500-600 Volts	Scan	PDF
IXGH30N60	IXYS	Power MOSIGBTs	Scan	PDF
IXGH30N60A	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF
IXGH30N60A	IXYS	Power MOSIGBTs	Scan	PDF
IXGH30N60AU1	IXYS	High Speed IGBT with Diode	Scan	PDF

IXGH30N60B	IXYS	600V HiPerFAST IGBT	Original	PDF
IXGH 30N60B2	IXYS	HiPerFAST IGBT	Original	PDF
IXGH30N60B2	IXYS	IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT	Original	PDF
IXGH30N60B2D1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 70A 190W TO247AD	Original	PDF
IXGH30N60B4	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 66A 190W TO247	Original	PDF
IXGH30N60BD1	IXYS	600V HiPerFAST IGBT with diode	Original	PDF

IXGH30 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXGH30N60B Abstract: IXGT30N60B Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms	Original	IXGH30N60B IXGT30N60B IC110 O-247 O-268 IXGH30N60B IXGT30N60B	PDF
8-8NS Abstract: No abstract text available Text: Advance Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings	Original	IXGH30N60B4 IC110 O-247 338B2 8-8NS	PDF
30N30 Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH30N30 VCES IC25 VCE sat tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30	Original	IXGH30N30 O-247 30N30	PDF
30n30 Abstract: IXGH30N30 Text: HiPerFASTTM IGBT IXGH30N30 VCES IC25 VCE sat tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30	Original	IXGH30N30 O-247 30N30 30n30 IXGH30N30	PDF
IXGH30N60B4 Abstract: No abstract text available Text: Preliminary Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings	Original	IXGH30N60B4 IC110 O-247 062in. 338B2 IXGH30N60B4	PDF
Untitled Abstract: No abstract text available Text: GenX3TM 1200V IGBTs IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE sat tfi(typ) High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching = = ≤£ = 1200V 30A 3.5V 204ns TO-263 (IXGA) G Symbol Test Conditions E Maximum Ratings VCES TC = 25°C to 150°C 1200	Original	IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 IC110 204ns O-263 O-247 30N120B3 0-06-09-A	PDF
IXGH30N120C3H1 Abstract: ixgh30n120 G30N120C3 tf 185 IC100 Text: Preliminary Technical Information IXGH30N120C3H1 GenX3TM 1200V IGBT VCES = 1200V = 24A IC100 VCE sat ≤ 4.2V = 42ns tfi(typ) High speed PT IGBTs for 10-50kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGH30N120C3H1 IC100 10-50kHz O-247AD 30N120C3H1 IXGH30N120C3H1 ixgh30n120 G30N120C3 tf 185 IC100	PDF
G30N60 Abstract: IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710 Text: GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions G Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 40-100kHz IC110 O-263 O-220 G30N60 IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710	PDF
Untitled Abstract: No abstract text available Text: IXGH30N60U1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8	Original	IXGH30N60U1 Junc-Case620m delay100nÃ time200nÃ time500nÃ	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC100 = 24A VCE sat ≤ 4.2V tfi(typ) = 42ns IXGH30N120C3H1 High speed PT IGBTs for 10-50kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC100 IXGH30N120C3H1 10-50kHz O-247AD 30N120C3H1	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information High-Gain IGBT VCES IC110 VCE sat tfi(typ) IXGH30N60B4 Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings	Original	IC110 IXGH30N60B4 O-247 338B2	PDF
IXGA30N60C3 Abstract: IXGH30N60C3 IXGP30N60C3 30N60C3 G30N60C3 Text: IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	40-100kHz IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 IC110 O-263 IC110 O-220AB O-247 30N60C3 IXGH30N60C3 G30N60C3	PDF
ixgh30n60c3d1 Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3 Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 IF110 O-247) O-268 O-247 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3	PDF
IXGH30N120B3 Abstract: ixgh30n120 G30N120B3 IXGA30N120B3 30n12 204ns Text: GenX3TM 1200V IGBTs IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE sat tfi(typ) High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching = = ≤£ = 1200V 30A 3.5V 204ns TO-263 (IXGA) G Symbol Test Conditions E Maximum Ratings VCES TC = 25°C to 150°C 1200	Original	IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 IC110 204ns O-263 O-247 O-220 30N120B3 IXGH30N120B3 ixgh30n120 G30N120B3 IXGA30N120B3 30n12 204ns	PDF

Untitled Abstract: No abstract text available Text: IXGH30N50 Transistors N-Channel IGBT V BR CES (V)500 V(BR)GES (V)30 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case600m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8.0	Original	IXGH30N50 Junc-Case600m delay100n time200n	PDF
Untitled Abstract: No abstract text available Text: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8	Original	IXGH30N60AU1 Junc-Case620m delay100nÃ time200nÃ time500nÃ	PDF
Untitled Abstract: No abstract text available Text: IXGH30N30 Transistors N-Channel IGBT V BR CES (V)250 V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.	Original	IXGH30N30 Junc-Case620m delay100nÃ time200nÃ time700nÃ	PDF
IXGA30N60C3C1 Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3 Text: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings	Original	IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 IC110 100kHz O-263 IF110 O-220AB O-247 IXGH30N60C3C1 30N60C3	PDF
IXGH30N60C3D1 Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1 Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ	Original	IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 ID110 IXGH30N60C3D1 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1	PDF
30n60 Abstract: IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A n60u1 Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH30 N60U1 IXGH30 N60AU1 VCES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£2	OCR Scan	IXGH30 N60U1 N60AU1 30N60U1 30N60AU1 30n60 IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A	PDF
14055B Abstract: No abstract text available Text: Hi PerFAST IGBT IXGH30N60B IXGT30N60B CES ^C25 VCE sat tfi = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Test Conditions Maximum Ratings V CES T j = 2 5 cC to 1 5 0 °C 600 V V CGR T ,J = 25° C to 150° C; R CaE „ = 1 MQ 600 V V GES Continuous	OCR Scan	IXGH30N60B IXGT30N60B O-268 -247A 14055B	PDF
Untitled Abstract: No abstract text available Text: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C	OCR Scan	IXGH30N60BD1 150PC 15CFC; O-247	PDF
30N60 Abstract: No abstract text available Text: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO	OCR Scan	IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) IXGH3QN60BU1 IXGH30N6QBU1S 30N60	PDF
L-1047 Abstract: No abstract text available Text: □ IXYS HiPerFAST IGBT IXGH30N60B IXGT30N60B VC ES ^C25 V CE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Maximum Ratings Test Conditions vv C E S Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous	OCR Scan	IXGH30N60B IXGT30N60B 13/10Nm/lb O-247 O-268 L-1047	PDF

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IXGH30 Datasheets (28)

IXGH30 Datasheets Context Search

IXGH30N60B

8-8NS

30N30

30n30

IXGH30N60B4

Untitled

IXGH30N120C3H1

G30N60

Untitled

Untitled

Untitled

IXGA30N60C3

ixgh30n60c3d1

IXGH30N120B3

Untitled

Untitled

Untitled

IXGA30N60C3C1

IXGH30N60C3D1

30n60

14055B

Untitled

30N60

L-1047