SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF110.0M-29A 110.0 MHz IF SAW Filter 29.66 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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821-IF110
0M-29A
J-STD-020C
2002/95/EC
32MHz
SAW Filter
IF SAW Filter
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SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.8M-07A 110.8MHz IF SAW Filter 7.70MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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813-IF110
8M-07A
70MHz
J-STD-020C
2002/95/EC
252ication
SAW Filter
IF SAW Filter
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SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.0M-02A 110MHz IF SAW Filter 2.18MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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813-IF110
0M-02A
110MHz
18MHz
J-STD-020C
2002/95/EC
SAW Filter
IF SAW Filter
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SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.0M-20C 110.1 MHz IF SAW Filter 20.35 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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813-IF110
0M-20C
J-STD-020C
2002/95/EC
65MHz
SAW Filter
IF SAW Filter
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SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF110.0M-20B 110.0 MHz IF SAW Filter 20.27 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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821-IF110
0M-20B
J-STD-020C
2002/95/EC
75MHz
SAW Filter
IF SAW Filter
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SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.0M-04A 110MHz IF SAW Filter 4.82MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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813-IF110
0M-04A
110MHz
82MHz
J-STD-020C
2002/95/EC
SAW Filter
IF SAW Filter
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SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF110.43M-03A 110.43 MHz IF SAW Filter 3.90MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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821-IF110
43M-03A
90MHz
J-STD-020C
2002/95/EC
SAW Filter
IF SAW Filter
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Diode smd s6 68
Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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GWM100-0085X1
IF110
ID110
A0-0085X1
100-085X1-SL
100-085X1-SMD
100-0085X1
100-0085X1
Diode smd s6 68
S4 42 DIODE
smd diode g6 DIODE S4 39 smd diode
DIODE marking S6 77
smd diode g6
smd diode S6
Diode smd s6 68 g1
S3 marking DIODE
smd diode code 03a
smd diode marking 77
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SMD MARKING code L1
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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180-004X2
IF110
ID110
1004X2
180-004X2-SL
180-004X2-SMD
180-004X2
SMD MARKING code L1
smd diode g6 DIODE S4 39 smd diode
smd diode marking code L2
smd diode S6
DIODE smd marking l3
smd diode s4
smd diode code mj
smd diode g5
SMD MARKING g5
SMD mosfet MARKING code TJ
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50904
Abstract: No abstract text available
Text: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol
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3x180-004X2
ID110
IF110
20100713a
50904
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IXGJ50N60C4D1
Abstract: G50N60
Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXGJ50N60C4D1
IC110
O-247TM
E153432
IC110
IF110
50N60C4
0-06-11-A
IXGJ50N60C4D1
G50N60
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QR30
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N120C3D1
O-247
IF110
062in.
QR30
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IXGK50N60A2D1
Abstract: No abstract text available
Text: Advance Technical Data IGBT with Diode IXGK50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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IXGK50N60A2D1
50N60A2D1
IC110
IF110
50N60B2D1
O-264
PLUS247
405B2
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30N60B3D
Abstract: No abstract text available
Text: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
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IXXH30N60B3D1
IC110
125ns
O-247
IF110
30N60B3D1
30N60B3D
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IXXH50N60B3D1
Abstract: No abstract text available
Text: IXXH50N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 600V 50A 1.80V 135ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
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IXXH50N60B3D1
IC110
5-30kHz
135ns
O-247
IF110
IXXH50N60B3D1
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGN120N60A3
IXGN120N60A3D1
IC110
OT-227B,
E153432
IF110
2x61-06A
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Untitled
Abstract: No abstract text available
Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXN110N65B4H1
10-30kHz
IC110
OT-227B,
E153432
IF110
110N65B4H1
02-04-13-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH80N65B4H1 XPTTM 650V IGBT GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 650V 80A 2.0V 63ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IXXH80N65B4H1
IC110
O-247
IF110
80N65B4
2-01-13-A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYT30N65C3H1HV IXYH30N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = IC110 = VCE sat tfi(typ) = 650V 30A 2.7V 24ns TO-268HV Symbol Test Conditions Maximum Ratings
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IXYT30N65C3H1HV
IXYH30N65C3H1
20-60kHz
IC110
O-268HV
IF110
30N65C3
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IXGP30N60B4D1
Abstract: No abstract text available
Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES = IC110 = VCE sat tfi(typ) = High-Speed PT Trench IGBT 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
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IXGP30N60B4D1
IC110
O-220
IF110
338B2
IXGP30N60B4D1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH24N90C3D1 900V XPTTM IGBT GenX3TM w/Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 900 900 V V VGES
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IXYH24N90C3D1
IF110
O-247
24N90C3
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100n60
Abstract: No abstract text available
Text: Advance Technical Information IXXK100N60C3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600
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20-60kHz
IXXK100N60C3H1
IF110
-55econds
100N60C3
0-10-A
100n60
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IXXN100N60B3H1
Abstract: No abstract text available
Text: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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10-30kHz
IXXN100N60B3H1
150ns
IF110
100N60B3
12-01-11-B
IXXN100N60B3H1
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IXGR50N60B2D1
Abstract: 50N60B2
Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings
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ISOPLUS247TM
50N60B2
50N60B2D1
IC110
IF110
50N60B2D1
ISOPLUS247
2x61-06A
065B1
728B1
IXGR50N60B2D1
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