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    IXFR24N100 Search Results

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    Littelfuse Inc IXFR24N100Q3

    MOSFET N-CH 1000V 18A ISOPLUS247
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    DigiKey IXFR24N100Q3 Tube 67 1
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    Newark IXFR24N100Q3 Bulk 300
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    RS IXFR24N100Q3 Bulk 8 Weeks 30
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    IXYS Corporation IXFR24N100

    MOSFET N-CH 1KV 22A ISOPLUS247
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    DigiKey IXFR24N100 Tube 30
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    IXYS Corporation IXFR24N100Q3

    MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A
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    Mouser Electronics IXFR24N100Q3
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    TTI IXFR24N100Q3 Tube 300
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    TME IXFR24N100Q3 20 1
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    IXYS Integrated Circuits Division IXFR24N100Q3

    MOSFET DIS.18A 1000V N-CH ISOPLUS247 HIPERFET THT
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    Ozdisan Elektronik IXFR24N100Q3
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    IXFR24N100 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFR24N100 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXFR24N100 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1KV 22A ISOPLUS247 Original PDF
    IXFR24N100Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 18A ISOPLUS247 Original PDF

    IXFR24N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR24N100Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 18A Ω 490mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR24N100Q3 300ns ISOPLUS247 E153432 150orward-Bias 24N100Q3

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET ISOPLUS247TM VDSS ID25 IXFR24N100 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 1000V 22A Ω 390mΩ 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM IXFR24N100 250ns ISOPLUS247 E153432 24N100 10-17-08-C

    IXFR24N100Q3

    Abstract: DS100394
    Text: Advance Technical Information IXFR24N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 18A Ω 490mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR24N100Q3 300ns ISOPLUS247 E153432 24N100Q3 IXFR24N100Q3 DS100394

    IXFR24N100

    Abstract: ISOPLUS247
    Text: IXFR24N100 HiPerFETTM Power MOSFET ISOPLUS247TM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 1000V 22A Ω 390mΩ 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFR24N100 ISOPLUS247TM 250ns ISOPLUS247 E153432 24N100 10-17-08-C IXFR24N100 ISOPLUS247

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original     		PDF IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w

    Untitled

    Abstract: No abstract text available
    Text: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs IXFR 24N100 V¥ ISOPLUS247™ ^D25 = 1000 V 22 A = _ 0.39 ß DS on “ “ dss P (Electrically Isolated Back Surface) trr <250 ns Single MOSFET Die Symbol Test Conditions v Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 M£2


    OCR Scan     		PDF 24N100 ISOPLUS247TM Cto150 00A/tis, 247TM

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50