IXFR24N100 Search Results

IXFR24N100 Price and Stock

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Littelfuse Inc IXFR24N100Q3 MOSFET N-CH 1000V 18A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR24N100Q3	Tube	67		1	1 $20.1 10 $20.1 100 $20.1 1000 $20.1 10000 $20.1	Buy Now
Newark	IXFR24N100Q3	Bulk			300	1 - 10 - 100 - 1000 $21.07 10000 $21.07	Buy Now
RS	IXFR24N100Q3	Bulk		8 Weeks	30	1 - 10 - 100 $31.09 1000 $31.09 10000 $31.09	Get Quote
IXYS Corporation IXFR24N100 MOSFET N-CH 1KV 22A ISOPLUS247
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DigiKey	IXFR24N100	Tube			30	1 - 10 - 100 $13.182 1000 $13.182 10000 $13.182	Buy Now
Mouser Electronics	IXFR24N100					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFR24N100Q3 MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A
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Mouser Electronics	IXFR24N100Q3					1 - 10 - 100 - 1000 $20.1 10000 $20.1	Get Quote
TTI	IXFR24N100Q3	Tube			300	1 - 10 - 100 - 1000 $20.1 10000 $20.1	Buy Now
TME	IXFR24N100Q3		20		1	1 $34.42 10 $27.34 100 $24.6 1000 $24.6 10000 $24.6	Buy Now
IXYS Integrated Circuits Division IXFR24N100Q3 MOSFET DIS.18A 1000V N-CH ISOPLUS247 HIPERFET THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFR24N100Q3					1 $37.36536 10 $37.36536 100 $34.9209 1000 $34.9209 10000 $34.9209	Get Quote

IXFR24N100 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFR24N100		IXYS	1000V HiPerFET power MOSFET		Original	PDF
IXFR24N100		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1KV 22A ISOPLUS247		Original	PDF
IXFR24N100Q3		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 18A ISOPLUS247		Original	PDF

IXFR24N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR24N100Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 18A Ω 490mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions	Original	PDF	IXFR24N100Q3 300ns ISOPLUS247 E153432 150orward-Bias 24N100Q3
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET ISOPLUS247TM VDSS ID25 IXFR24N100 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 1000V 22A Ω 390mΩ 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	ISOPLUS247TM IXFR24N100 250ns ISOPLUS247 E153432 24N100 10-17-08-C
IXFR24N100Q3 Abstract: DS100394 Text: Advance Technical Information IXFR24N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 18A Ω 490mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions	Original	PDF	IXFR24N100Q3 300ns ISOPLUS247 E153432 24N100Q3 IXFR24N100Q3 DS100394
IXFR24N100 Abstract: ISOPLUS247 Text: IXFR24N100 HiPerFETTM Power MOSFET ISOPLUS247TM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 1000V 22A Ω 390mΩ 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFR24N100 ISOPLUS247TM 250ns ISOPLUS247 E153432 24N100 10-17-08-C IXFR24N100 ISOPLUS247
IXAN0009 Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power	Original	PDF	IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Untitled Abstract: No abstract text available Text: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs IXFR 24N100 V¥ ISOPLUS247™ ^D25 = 1000 V 22 A = _ 0.39 ß DS on “ “ dss P (Electrically Isolated Back Surface) trr <250 ns Single MOSFET Die Symbol Test Conditions v Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 M£2	OCR Scan	PDF	24N100 ISOPLUS247TM Cto150 00A/tis, 247TM
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	PDF	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50