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IXYS Corporation IXFH4N100Q MOSFET N-CH 1000V 4A TO247AD
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IXFH4N100 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFH4N100		IXYS	HiPerFET Power MOSFETs Q-Class		Original	PDF
IXFH4N100Q		IXYS	1000V HiPerFET power MOSFET Q-class		Original	PDF

IXFH4N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
4n100 Abstract: IXFH4N100Q 4N100Q IXFR4N100Q Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 4n100 4N100Q IXFR4N100Q	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
IXFH4N100Q Abstract: IXFR4N100Q Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM	Original	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 123B1 728B1 065B1 IXFR4N100Q	PDF
IXFR4N100Q Abstract: IXFH4N100 ll1000 Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	ISOPLUS247TM 4N100Q 200ns IXFH4N100 IXFR4N100Q ll1000	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF