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    4N100 Search Results

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    R5F72434N100FP#U0 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
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    4N100 Price and Stock

    TDK Electronics B65814N1008D001

    BOBBIN COIL FORMER RM 10
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    DigiKey B65814N1008D001 Box 2,399 1
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    Littelfuse Inc IXFK24N100Q3

    MOSFET N-CH 1000V 24A TO264AA
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    DigiKey IXFK24N100Q3 Tube 1,810 1
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    TDK Electronics B65814N1008D002

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    DigiKey B65814N1008D002 Box 1,211 1
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    Littelfuse Inc IXFA4N100Q

    MOSFET N-CH 1000V 4A TO263
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    DigiKey IXFA4N100Q Tube 898 1
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    Littelfuse Inc IXTA1R4N100P

    MOSFET N-CH 1000V 1.4A TO263
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    DigiKey IXTA1R4N100P Tube 412 1
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    4N100 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4N100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    4N100WR-10 Inmet ATTENUATOR Scan PDF
    4N100WR-10F Inmet ATTENUATOR Scan PDF
    4N100WR-10M Inmet ATTENUATOR Scan PDF
    4N100WR-20 Inmet ATTENUATOR Scan PDF
    4N100WR-20F Inmet ATTENUATOR Scan PDF
    4N100WR-20M Inmet ATTENUATOR Scan PDF
    4N100WR-3 Inmet ATTENUATOR Scan PDF
    4N100WR-30 Inmet ATTENUATOR Scan PDF
    4N100WR-30F Inmet ATTENUATOR Scan PDF
    4N100WR-30M Inmet ATTENUATOR Scan PDF
    4N100WR-3F Inmet ATTENUATOR Scan PDF
    4N100WR-3M Inmet ATTENUATOR Scan PDF
    4N100WR-40 Inmet ATTENUATOR Scan PDF
    4N100WR-40F Inmet ATTENUATOR Scan PDF
    4N100WR-40M Inmet ATTENUATOR Scan PDF
    4N100WR-6 Inmet ATTENUATOR Scan PDF
    4N100WR-6F Inmet ATTENUATOR Scan PDF
    4N100WR-6M Inmet ATTENUATOR Scan PDF

    4N100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    125OC

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		4N100Q O-220 Figure10. 125OC 125OC PDF

    4n100

    Abstract: IXFH4N100Q 4N100Q IXFR4N100Q
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings


    Original     		ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 4n100 4N100Q IXFR4N100Q PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		4N100Q O-247 Figure10. 125OC PDF

    4N100Q

    Abstract: 125OC
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		4N100Q O-247 125OC 728B1 123B1 728B1 065B1 125OC PDF

    IXFH4N100Q

    Abstract: IXFR4N100Q
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM


    Original     		ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 123B1 728B1 065B1 IXFR4N100Q PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V ID25 = 4 A RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		O-220) O-220 O-263 4N100Q 4N100Q O-220 Figure10. 125OC PDF

    125OC

    Abstract: 4N100Q
    Text: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V = 4A ID25 RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		4N100Q O-220 125OC 728B1 123B1 728B1 065B1 125OC 4N100Q PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V ID25 = 4A RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		O-220) O-220 O-263 4N100Q 4N100Q O-220 O-26oltage Figure10. PDF

    IXFR4N100Q

    Abstract: IXFH4N100 ll1000
    Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		ISOPLUS247TM 4N100Q 200ns IXFH4N100 IXFR4N100Q ll1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		O-247 O-268 4N100Q Figure10. 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 2.8 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		O-247 O-268 4N100Q O-268 Figure10. 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Maximum Ratings Test Conditions VCES = 1000 V IC25 = 8A VCE sat = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		4N100 O-220AB O-263 PDF

    4N100

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Test Conditions Maximum Ratings VCES = 1000 V IC25 = 8A VCE sat = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		4N100 O-220AB O-263 4N100 PDF

    4N100Q

    Abstract: 125OC
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		4N100Q O-247 Figure10. 125OC 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB180N10S4-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS on 2.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		IPB180N10S4-02 PG-TO263-7-3 4N1002 PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 4N100Q IXFT 4N100Q V DSS ^D25 D D S o n = 1000 V 4A = 2.8 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQ , Highdv/dt Symbol TestConditions Maximum Ratings V DSS


    OCR Scan     		4N100Q -247A PDF

    rockwell collins connector

    Abstract: 8040 instruction sheet HF-8040 523-076745B-00221A HF-9040 a13499 10MILLISECOND ROCKWELL COLLINS ARC-186 N6P2 RAP10
    Text: 523-076745B-00221A Rockwell International Collins instruction book HF-8040 Antenna Coupler This instruction book includes: 523-0767459 Description HF-804QM Supplement 523-0771398 523-0767460 Installation 523-0767461 Operation 523-0767462 Theory 523-0767463


    OCR Scan     		523-076745B-00221A HF-8040( HF-804QM HF-8040 F-1040 F-8040 HF-B040 4N1001 rockwell collins connector 8040 instruction sheet 523-076745B-00221A HF-9040 a13499 10MILLISECOND ROCKWELL COLLINS ARC-186 N6P2 RAP10 PDF

    1N100WR-6

    Abstract: 4N100WR-30M
    Text: ATTENUATORS up to 4 GHz TYPE N 100 Watts MODELS: XN 1 OOWR — > X N 1 0 0 W R -X X F , XN 1 OOWR — X X Ivi REDUCED SIZE SPECIFICATIONS: Electrical: Frequency Range Standard Freq. Values Standard dB Values* Attenuation Accuracy 3 & 6 d B _ 10 & 20 d B _


    OCR Scan     		00WR-> 00WR-XX MIL-STD-348 XN100WR-XXY 1N100WR-6 4N100WR-30M XN100WR-ATT; PDF

    4N95

    Abstract: 4n100 mosfet IXTM4N100 IXTM4N95 IXTP4N100 IXTP4N95 TSLA 4N95A
    Text: I X Y S CÔRP 1ÖE D • MböbSSb OQOGbOH Ö IXTP4N95, 4N100, IXTM4N95, 4N100 □ I X Y S 4 AMPS, 950-1000 V, 3.3Q/4.0Q ' T - 3 . ci - l 3 MAXIMUM RATINGS Parameter Sym. IXTP4N95 IXTM4N95 4N100 4N100 Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1)


    OCR Scan     		IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 IXTP4N95 IXTM4N95 IXTP4N100 O-220 00A//JS 4N95 4n100 mosfet IXTM4N95 TSLA 4N95A PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF

    4N95

    Abstract: 4n100 mosfet IXTP4N100 ixtm4N100 ixtm4n95
    Text: I X Y S CÔRP □ I X Y läE D • 4bôba2b OQOGbOH Ö IXTP4N95, 4N100, IXTM4N95, 4N100 S 4 AMPS, 950-1000 V, 3.3Q/4.0Q MAXIMUM RATINGS Sym. Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient


    OCR Scan     		IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 IXTP4N95 IXTM4N95 IXTP4N100 EL420 O-204 4N95 4n100 mosfet ixtm4n95 PDF