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Vishay Siliconix IRF9630SPBF MOSFET P-CH 200V 6.5A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF9630SPBF	Tube	3,550		1	1 $2.88 10 $2.88 100 $2.88 1000 $1.17376 10000 $1.17376	Buy Now
ComSIT USA	IRF9630SPBF		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRF9630PBF MOSFET P-CH 200V 6.5A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF9630PBF	Tube	2,205		1	1 $2.18 10 $2.18 100 $2.18 1000 $0.6932 10000 $0.59112	Buy Now
RS	IRF9630PBF	Bulk			1,000	1 - 10 - 100 - 1000 $2 10000 $1.9	Get Quote
Vishay Siliconix IRF9630PBF-BE3 MOSFET P-CH 200V 6.5A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF9630PBF-BE3	Tube	1,801		1	1 $2.18 10 $2.18 100 $2.18 1000 $0.6932 10000 $0.59112	Buy Now
Vishay Siliconix IRF9630STRLPBF MOSFET P-CH 200V 6.5A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF9630STRLPBF	Digi-Reel	1,151		1	1 $3.6 10 $2.352 100 $3.6 1000 $3.6 10000 $3.6	Buy Now
	IRF9630STRLPBF	Cut Tape	1,151		1	1 $3.6 10 $2.352 100 $3.6 1000 $3.6 10000 $3.6	Buy Now
	IRF9630STRLPBF	Reel	800		800	1 - 10 - 100 - 1000 $1.27244 10000 $1.27244	Buy Now
Quest Components	IRF9630STRLPBF		15			1 $2.1 10 $1.932 100 $1.68 1000 $1.68 10000 $1.68	Buy Now
	IRF9630STRLPBF		15			1 $2.1 10 $1.932 100 $1.68 1000 $1.68 10000 $1.68	Buy Now
New Advantage Corporation	IRF9630STRLPBF		12,000		1	1 - 10 - 100 - 1000 $0.7389 10000 $0.7389	Buy Now
Vishay Siliconix IRF9630 MOSFET P-CH 200V 6.5A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF9630	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRF9630 Datasheets (42)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF9630	Fairchild Semiconductor	6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs	Original	PDF
IRF9630	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF9630	Intersil	6.5A, 200V, 0.800 ?, P-Channel Power MOSFETs	Original	PDF
IRF9630	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF9630	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 6.5A TO-220AB	Original	PDF
IRF9630	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF9630	International Rectifier	Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)	Scan	PDF
IRF9630	International Rectifier	TO-220 Plastic Package HEXFETs	Scan	PDF
IRF9630	International Rectifier	TO-220 / TO-247 HEXFET Power MOSFETs	Scan	PDF
IRF9630	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -200V. -6.5A, Pkg Style TO-220AB	Scan	PDF
IRF9630	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF
IRF9630	Motorola	Switchmode Datasheet	Scan	PDF
IRF9630	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRF9630	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

IRF9630	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
IRF9630	Unknown	FET Data Book	Scan	PDF
IRF9630	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF9630	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF9630	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRF9630	Samsung Electronics	200 V, P-channel power MOSFET	Scan	PDF

IRF9630 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AN609 Abstract: IRF9630S SiHF9630S Text: IRF9630S_RC, SiHF9630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRF9630S SiHF9630S AN609, 22-Mar-10 AN609
IRF530S Abstract: No abstract text available Text: PD- 95771 IRF9630SPbF Lead-Free Document Number: 91085 06/06/05 www.vishay.com 1 IRF9630SPbF Document Number: 91085 www.vishay.com 2 IRF9630SPbF Document Number: 91085 www.vishay.com 3 IRF9630SPbF Document Number: 91085 www.vishay.com 4 IRF9630SPbF Document Number: 91085	Original	PDF	IRF9630SPbF 12-Mar-07 IRF530S
Untitled Abstract: No abstract text available Text: PD - 94958 IRF9630PbF • Lead-Free 1 IRF9630PbF 2 IRF9630PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)	Original	PDF	IRF9630PbF O-220AB O-220AB.
Untitled Abstract: No abstract text available Text: IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel	Original	PDF	IRF9630S, SiHF9630S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRF9630 Abstract: SiHF9630 SiHF9630-E3 Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF9630 SiHF9630-E3
IRF9630S Abstract: SiHF9630S SiHF9630S-E3 Text: IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9630S, SiHF9630S O-263) 18-Jul-08 IRF9630S SiHF9630S-E3
IRF9630 Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334 Text: IRF9630, RF1S9630SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified	Original	PDF	IRF9630, RF1S9630SM TA17512. TB334 IRF9630 O-220AB O-263AB IRF9630 RF1S9630 RF1S9630SM RF1S9630SM9A TB334
IRF9630 Abstract: 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334 Text: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of	Original	PDF	IRF9630, RF1S9630SM TA17512. IRF9630 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334
9571 Abstract: AN609 IRF9630 SiHF9630 Text: IRF9630_RC, SiHF9630_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRF9630 SiHF9630 AN609, 22-Mar-10 9571 AN609
Untitled Abstract: No abstract text available Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRF530S Abstract: No abstract text available Text: PD- 95771 IRF9630SPbF Lead-Free Document Number: 91085 06/06/05 www.vishay.com 1 IRF9630SPbF Document Number: 91085 www.vishay.com 2 IRF9630SPbF Document Number: 91085 www.vishay.com 3 IRF9630SPbF Document Number: 91085 www.vishay.com 4 IRF9630SPbF Document Number: 91085	Original	PDF	IRF9630SPbF 08-Mar-07 IRF530S
Untitled Abstract: No abstract text available Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

IRF9630S Abstract: SiHF9630S SiHF9630S-E3 Text: IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21	Original	PDF	IRF9630S, SiHF9630S O-263) 2002/95/EC 11-Mar-11 IRF9630S SiHF9630S-E3
irf9630 Abstract: IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9230 IRF9632 IRF9631 Text: IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance	OCR Scan	PDF	IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 IRF9630/IR FP9230/ IRF9230 IRF9631 /IRFP9231 IRF9231 IRF9632/IRFP9232/ irf9630 IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9632
Untitled Abstract: No abstract text available Text: IRF9630, RF1S9630SM Semiconductor April 1999 Data Sheet -6.5A, -200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	PDF	IRF9630, RF1S9630SM -200V, -200V
1RF9630 Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0Q12277 30b « S M G K IRF9630/9631 /9632/9633 IRFP9230/9231/9232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • ■ • • • TO-220 Lower R 0s ON Improved inductive ru gge d n e ss Fast sw itching tim es	OCR Scan	PDF	0Q12277 IRF9630/9631 IRFP9230/9231/9232/9233 O-220 IRF9630/9631/9632/9633 IRF9630/IRFP9230 IRF9631 /IRFP9231 IRF9632/IRFP9232 IRF9633/IRFP9233 1RF9630
diode 9232 Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232 Text: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 \| p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on	OCR Scan	PDF	IRF9230/9231Z9232/9233 RFP9230/9231 IRF9630/9631/9632/9633 D0QS417 IRF/IRFP9230, IRF9630 IRF/IRFP9231, IRF963 IRF/IRFP9232, IRF9632 diode 9232 1RF9630 IRFP9230 9232
IRF7205 Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY	OCR Scan	PDF	BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240
irf9630 Abstract: MOSFET IRF9630 IRF9630 mosfet IRF9632 IRF9631 Text: P-CHANNEL POWER MOSFETS IRF9630/9631 /9632/9633 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	IRF9630/9631 IRF9630 IRF9631 IRF9632 F9633 MOSFET IRF9630 IRF9630 mosfet
MOSFET IRF9630 Abstract: IRF 1630 IRF9630 IRF9631 IRP9 IRF9632 IRFS632 irf98 transistor IRF 630 IRF9633 Text: Rugged Power M O SFETs_ IRF9630, IRF9631, IRF9632, IRF9633 File Number 2224 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5 A and -6.5 A, -150 V and -2 0 0 V fDs on = 0.8 f i and 1.2 0 TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated	OCR Scan	PDF	IRF9630, IRF9631, IRF9632, IRF9633 IRF9632 IRF9633 B2CS-4330S 92CS-43279 MOSFET IRF9630 IRF 1630 IRF9630 IRF9631 IRP9 IRFS632 irf98 transistor IRF 630
MOSFET IRF9630 Abstract: fet IRF9630 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF9630 P o w e r Field E ffe c t T ra n sisto rs P-Channel Enhancement-Mode Silicon Gate TMOS T h is T M O S Po w er F E T is d esig ned fo r high vo ltag e, high speed p o w er sw itch in g ap plicatio n s such as s w itc h	OCR Scan	PDF	IRF9630 21A-04 O-220AB MOSFET IRF9630 fet IRF9630
IRF9630 Abstract: MOSFET IRF9630 Text: PD-9.352F International S S Rectifier IRF9630 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V = 0-80Q R DS on lD = -6.5A Description	OCR Scan	PDF	IRF9630 -200V O-220 T0-220 IRF9630 MOSFET IRF9630

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IRF9630 Price and Stock

Vishay Siliconix IRF9630SPBF

Vishay Siliconix IRF9630PBF

Vishay Siliconix IRF9630PBF-BE3

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Vishay Siliconix IRF9630

IRF9630 Datasheets (42)

IRF9630 Datasheets Context Search

AN609

IRF530S

Untitled

Untitled

IRF9630

IRF9630S

IRF9630

IRF9630

9571

Untitled

Untitled

Untitled

IRF530S

Untitled

IRF9630S

irf9630

Untitled

1RF9630

diode 9232

IRF7205

irf9630

MOSFET IRF9630

MOSFET IRF9630

IRF9630