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    IRF9633 Search Results

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    IRF9633 Price and Stock

    Harris Semiconductor IRF9633

    5.5A, 150V, 1.2ohm, P-Channel, POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRF9633 275 1
    • 1 $0.7908
    • 10 $0.7908
    • 100 $0.7434
    • 1000 $0.6722
    • 10000 $0.6722
    Buy Now

    IRF9633 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9633 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9633 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF9633 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan PDF
    IRF9633 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRF9633 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9633 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF9633 Unknown FET Data Book Scan PDF
    IRF9633 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9633 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9633 Samsung Electronics 150 V, P-channel power MOSFET Scan PDF
    IRF9633 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    IRF9633 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF9633 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V) I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original
    PDF IRF9633

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRF9630

    Abstract: MOSFET IRF9630 IRF9631 IRF9633 irf P-Channel MOSFET audio c366 dsa 362 IRF9632
    Text: HE D | 4055452 □□GâblE 1 | Data Sheet No. PD-9.352E INTERNATIONAL RECTIFIER / - 1 INTERNATIONAL RECTIFIER !- * • I« R HEXFET TRANSISTORS IRFSB30 IRFSB31 P-CHAIMSMEL 2 0 0 VO LT IRFSG32 POWER M OSFETs G IRF9633 -200 Volt, 0.8 Ohm HEXFET TO-22ÛAB Plastic Package


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    PDF 11-9-i T0-220AB S54S2 T-39-21 C-366 IRF9630 MOSFET IRF9630 IRF9631 IRF9633 irf P-Channel MOSFET audio c366 dsa 362 IRF9632

    MOSFET IRF9630

    Abstract: IRF 1630 IRF9630 IRF9631 IRP9 IRF9632 IRFS632 irf98 transistor IRF 630 IRF9633
    Text: Rugged Power M O SFETs_ IRF9630, IRF9631, IRF9632, IRF9633 File Number 2224 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5 A and -6.5 A, -150 V and -2 0 0 V fDs on = 0.8 f i and 1.2 0 TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated


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    PDF IRF9630, IRF9631, IRF9632, IRF9633 IRF9632 IRF9633 B2CS-4330S 92CS-43279 MOSFET IRF9630 IRF 1630 IRF9630 IRF9631 IRP9 IRFS632 irf98 transistor IRF 630

    irf9630

    Abstract: IRF9632 IRF9631
    Text: HARRIS IR F9630, IRF9631 IRF 9632, IRF9633 Avalanche Energy Rated P-Channel Power MOSFETs A ug ust 1991 Package Features TO -2 2 0 A B • -5.5A and -6.5A , -1 5 0 V and -20 0 V TOP VIEW • r0s O N = 0 .8 0 and 1 .2 fl • Single Pulse Avalanche Energy Rated


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    PDF F9630, IRF9631 IRF9633 IRF9630, IRF9631, F9632 F9633 IRF9632, irf9630 IRF9632

    irf9630

    Abstract: IRF9631 IRF9632 RF1S9630 MOSFET IRF9630 IRF9633
    Text: HARFRIS S E M I C O N D U C T O R IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs May 1998 Description Features -5.5A and -6.5A, -150V and -200V Linear Transfer Characteristics


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    PDF IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM -150V -200V, TA17512. RF9630, irf9630 IRF9631 IRF9632 RF1S9630 MOSFET IRF9630 IRF9633

    IRF9521

    Abstract: IRF9612 irfbf30 9390 IRF830 International rectifier IRF9512 IRF9523 irfbe30 9351 IRFBG32
    Text: PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D INTERNATIONAL. RECTIFIER MässMsa oüiassb s • IOR T - 3 ^ - 0 3 TO-220 Package N-CHANNEL Types VDS r D S 0N (max) Iq cont <0M PO T c - 2 5 °C pulsed max A W IRF840 0.85 8.0 3 2.0 125 IR F8 4 2 IRF83 0


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    PDF O-220 IRF840 IRF842 IRF830 IRF832 IRF820 IRF822 IRFBC40 IRFBC42 IRFBC30 IRF9521 IRF9612 irfbf30 9390 IRF830 International rectifier IRF9512 IRF9523 irfbe30 9351 IRFBG32

    1RF530

    Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
    Text: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)


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    PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF530 1RF540 1rf520 RF543 IRF532 IRF533 IRF541 IRF542 IRF543

    irf9630

    Abstract: IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9230 IRF9632 IRF9631
    Text: IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


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    PDF IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 IRF9630/IR FP9230/ IRF9230 IRF9631 /IRFP9231 IRF9231 IRF9632/IRFP9232/ irf9630 IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9632

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    IRFP040

    Abstract: IRFP141 IRFP142 IRFP143 IRF9613 irfp245 IRF9620 IRF9632 IRF9643
    Text: HEXFET Power MOSFETs International S Rectifier Plastic Insertable Package TO-220 P-Channel s Drain Source Voltage Volts Vq Part Number RDS(on) On-Siate Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) 'D M Pu'*« Drain Current (Amps) P q Max


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    PDF O-220 IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9613 IRFP040 IRFP141 IRFP142 IRFP143 irfp245 IRF9620 IRF9632 IRF9643

    1RF9630

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0Q12277 30b « S M G K IRF9630/9631 /9632/9633 IRFP9230/9231/9232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • ■ • • • TO-220 Lower R 0s ON Improved inductive ru gge d n e ss Fast sw itching tim es


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    PDF 0Q12277 IRF9630/9631 IRFP9230/9231/9232/9233 O-220 IRF9630/9631/9632/9633 IRF9630/IRFP9230 IRF9631 /IRFP9231 IRF9632/IRFP9232 IRF9633/IRFP9233 1RF9630

    IRF9610

    Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
    Text: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540


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    PDF O-220 IRF9512 TQ-220AB IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9610 IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE

    1RF9540

    Abstract: IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9540 IRF9541 IRF9620
    Text: - 25 6 - m a tt f m ± t Vg s t Vd s or Vd g % V (V) « Æ n fê (Ta=25^) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s min (nA) Vg s (V) (UA) Vd s (V) (V) max (V) % Id (nA) Í# F Ds(on) Vd s = Vg s te (Ta=25t) b(Qn) Ciss g fs Coss Crss ft JE m m V g s =0


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    PDF IRF9540 O-220AB IRF9541 F9542 O-220 IRF9543 IRF961G 1RF9540 IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9620

    diode 9232

    Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232
    Text: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 | p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on


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    PDF IRF9230/9231Z9232/9233 RFP9230/9231 IRF9630/9631/9632/9633 D0QS417 IRF/IRFP9230, IRF9630 IRF/IRFP9231, IRF963 IRF/IRFP9232, IRF9632 diode 9232 1RF9630 IRFP9230 9232

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


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    PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240

    irf9630

    Abstract: MOSFET IRF9630 IRF9630 mosfet IRF9632 IRF9631
    Text: P-CHANNEL POWER MOSFETS IRF9630/9631 /9632/9633 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRF9630/9631 IRF9630 IRF9631 IRF9632 F9633 MOSFET IRF9630 IRF9630 mosfet

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


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    PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    RC4292

    Abstract: raytheon ref
    Text: Section 9 RC4292 RC4292 Negative Switch Mode Power SupplyController Features • Converts a negative voltage into positive and/or negative voltages ■ Wide application voltage range: -20V minimum, -120V maximum ■ High efficiency: 70% typical ■ Adjustable output voltage


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    PDF RC4292 RC4292 -120V RC429 raytheon ref

    1RF9640

    Abstract: IRFP120 IRFP123 IRFP143 IRFA1Z0 IRFP220 IRFP230 IRFP142 TO-3P IRFP121
    Text: - 298 - f m % *± € i m ± £ f é T a - 2 5 ^ ft V Vd s Vg s or Vdg Id Pd ♦ /CH (V) (A) I g ss Vg s th ) I dss * /CH (nA) Vg s (V) ( ma) Vd s (V) min max (V) (V) % Id (mA) (T a = 2 5 ^ ) (ft RD s(on) Vd s= Vg s Io (o n ) C is s g fs Coss C rss 5* B


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    PDF Ta-25 1RF9632 O-220 1RF9633 T0-220 1RF9640 1RF9641 IRFP120 IRFP123 IRFP143 IRFA1Z0 IRFP220 IRFP230 IRFP142 TO-3P IRFP121

    1rf740

    Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
    Text: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-


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    PDF 1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB 1rf740 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


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    PDF IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221

    1rfp360

    Abstract: IRFP143 1rfp254 IRFP240 irfa1z0 IRFP230 IRFP141 IRFP151 IRFP153 IRFP241
    Text: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V) fë 1 (Ta=25°C) Id Pd * /CH * /CH (A) (W) Ig ss (nA) V g s th) Id ss Vg s (V) min max (V) (V) a ) (V) (nA) fè FD s ( o n ) Vd s = Vg s Id Vd s (m ft % g fs Io(on) Ciss Coss Crss * B m % Vg s =0 (max)


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    PDF O-247AC IRFP141 IRFP14! T0-247AC IRFPI41 IRFP142 IRFP143 IRFP150 IRFP152 1rfp360 1rfp254 IRFP240 irfa1z0 IRFP230 IRFP151 IRFP153 IRFP241