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    1RF9630

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0Q12277 30b « S M G K IRF9630/9631 /9632/9633 IRFP9230/9231/9232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • ■ • • • TO-220 Lower R 0s ON Improved inductive ru gge d n e ss Fast sw itching tim es


    OCR Scan     		PDF 0Q12277 IRF9630/9631 IRFP9230/9231/9232/9233 O-220 IRF9630/9631/9632/9633 IRF9630/IRFP9230 IRF9631 /IRFP9231 IRF9632/IRFP9232 IRF9633/IRFP9233 1RF9630

    diode 9232

    Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232
    Text: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 | p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on


    OCR Scan     		PDF IRF9230/9231Z9232/9233 RFP9230/9231 IRF9630/9631/9632/9633 D0QS417 IRF/IRFP9230, IRF9630 IRF/IRFP9231, IRF963 IRF/IRFP9232, IRF9632 diode 9232 1RF9630 IRFP9230 9232

    IRF9630

    Abstract: MOSFET IRF9630
    Text: PD-9.352F International S S Rectifier IRF9630 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V = 0-80Q R DS on lD = -6.5A Description


    OCR Scan     		PDF IRF9630 -200V O-220 T0-220 IRF9630 MOSFET IRF9630