IRF630
Abstract: mosfet irf630fp IRF630FP JESD97
Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■
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IRF630
IRF630FP
O-220/TO-220FP
O-220
O-220FP
O-220
IRF630
mosfet irf630fp
IRF630FP
JESD97
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IRF630
Abstract: irf630 mosfet
Text: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF630
IRF630FP
O-220/TO-220FP
O-220
O-220FP
IRF630
irf630 mosfet
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PDF
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irf630
Abstract: 200V AUTOMOTIVE MOSFET irf630 datasheet irf630 equivalent IRF630FP JESD97 irf630 to-220
Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■
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IRF630
IRF630FP
O-220/TO-220FP
O-220
O-220FP
irf630
200V AUTOMOTIVE MOSFET
irf630 datasheet
irf630 equivalent
IRF630FP
JESD97
irf630 to-220
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PDF
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IRF630
Abstract: IRF630FP
Text: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF630
IRF630FP
O-220/TO-220FP
O-220
O-220FP
IRF630
IRF630FP
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■
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IRF630
IRF630FP
O-220/TO-220FP
O-220
O-220FP
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irf630
Abstract: irf630 equivalent schematic diagram UPS 600 Power free IRF630FP MOSFET IRF630
Text: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF630
IRF630FP
O-220/TO-220FP
O-220
O-220FP
irf630
irf630 equivalent
schematic diagram UPS 600 Power free
IRF630FP
MOSFET IRF630
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PDF
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IRF630
Abstract: mosfet morocco IRF630FP IRF630 p
Text: IRF630 IRF630FP N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF630
IRF630FP
O-220/FP
IRF630F
O-220
O-220FP
IRF630
mosfet morocco
IRF630FP
IRF630 p
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PDF
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IRF630
Abstract: IRF630FP
Text: IRF630 IRF630FP N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF630
IRF630FP
O-220/FP
IRF630F
O-220
O-220FP
IRF630
IRF630FP
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PDF
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irf630
Abstract: mosfet irf630
Text: DC COMPONENTS CO., LTD. IRF630 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS ON = 0.4 Ohm ID = 9.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements
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IRF630
O-220AB
irf630
mosfet irf630
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SEC irf630
Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
Text: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Dynamic dv/dt Rating speed power switching applications such as switching Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.
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IRF630
O-220
IRF630.
SEC irf630
IRF630 SEC
irf630 datasheet
CIRF630
irf630
IRF630 p
4.5V to 100V input regulator
4.5V TO 100V INPUT REGULATORS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN
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O-220
IRF630
O-220
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200v mosfet
Abstract: n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet
Text: INCHANGE MOSFET IRF630 N-channel mosfet transistor Features 123 ・With TO-220 package ・Low on-state and thermal resistance ・Fast switching ・VDSS=200V; RDS ON ≤0.4Ω;ID=9A ・1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER
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IRF630
O-220
O-220
200v mosfet
n mosfet low vgs
200 A 200V mosfet
irf630 equivalent
low igss
mosfet low vgs
mosfet irf630
irf630
IRF630 mosfet
irf630 datasheet
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PDF
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irf630
Abstract: rf1s630sm9a IRF630 Fairchild
Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power
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IRF630,
RF1S630SM
IRF63
O220AB
O263AB
RF1S630SM
irf630
rf1s630sm9a
IRF630 Fairchild
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN
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O-220
IRF630
O-220
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IRF630
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF630
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PDF
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IRF630pbf
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF630pbf
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PDF
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Untitled
Abstract: No abstract text available
Text: <zz>£tni-C.onauctoi J loaucti, L/nc, LJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630 0(2) DESCRIPTION • Drain Current -ID=9A@ TC=25°C • Drain Source Voltage-
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IRF630
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TA17412
Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF630,
RF1S630SM
TA17412.
1578f
TA17412
irf630
irf630 equivalent
IRF632
RF1S630SM
RF1S630SM9A
TB334
IRF630 p
IRF630 INTERSIL
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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IRF630,
SiHF630
O-220
O-220
12-Mar-07
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irf630
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRF630/631 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower Input capacitance • Extended safe operating area • Improved high temperature reliability
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OCR Scan
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IRF630/631
IRF630
IRF631
irf630
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Untitled
Abstract: No abstract text available
Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRF630,
RF1S630SM
400i2
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PDF
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IRF630
Abstract: IRFP230 for IRF630 F632 IRFP231 IRF630 mosfet IRF633 ade 633 IRF632 IRFP233
Text: IRF630/631Z632/633 IR FP230/231/232/233 N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds <on • • • • • Improved inductive ruggedness Fast switching times Rugged polysilfcon gate cell structure Lower input capacitance Extended safe operating area
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OCR Scan
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IRF630/631Z632/633
FP230/231/232/233
O-220
IRF630/IRFP230
IRF631
/IRFP231
IRF632/IRFP232
IRF633/IRFP233
IRF630/631/632/633
IRFP230/231/232/233
IRF630
IRFP230
for IRF630
F632
IRFP231
IRF630 mosfet
IRF633
ade 633
IRF632
IRFP233
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irf630
Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
Text: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ MTP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631
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IRF230-233/IRF630-633
MTP12N18/12N20
TQ-204AA
O-220AB
IRF630
IRF631
IRF632
IRF633
MTP12N18
MTP12N20
irf630
IRF230
12N20
f630
IRF630-633
IRF231
IRF631
IRF632
IRF633
MTP12N18
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irf630
Abstract: RD161
Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA
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IRF630
O-220
irf630
RD161
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PDF
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