Untitled
Abstract: No abstract text available
Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
IRF630S,
SiHF630S
2002/95/EC
O-263)
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
|
Original
|
IRF630,
SiHF630
O-220
O-220
12-Mar-07
|
PDF
|
IRF630PBF
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
|
Original
|
IRF630,
SiHF630
2002/95/EC
O-220AB
11-Mar-11
IRF630PBF
|
PDF
|
IRF630
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
|
Original
|
IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF630
|
PDF
|
IRF630pbf
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
|
Original
|
IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF630pbf
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF630S_RC, SiHF630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
IRF630S
SiHF630S
AN609,
8742m
0026m
8165m
3067m
9761m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
IRF630S,
SiHF630S
2002/95/EC
O-263)
18-Jul-08
|
PDF
|
sihf630s
Abstract: SMD diode NC
Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 43 • Dynamic dV/dt Rating Qgs (nC) 7.0 • Repetitive Avalanche Rated 23 • Fast Switching Qgd (nC) Configuration
|
Original
|
IRF630S,
SiHF630S
SMD-220
12-Mar-07
SMD diode NC
|
PDF
|
AN609
Abstract: IRF630 SiHF630
Text: IRF630_RC, SiHF630_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
IRF630
SiHF630
AN609,
09-Mar-10
AN609
|
PDF
|
smd e3a
Abstract: IRF630S SiHF630S SiHF630S-E3 SMD-220 IRF630STRLPBF
Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 43 • Dynamic dV/dt Rating Qgs (nC) 7.0 • Repetitive Avalanche Rated 23 • Fast Switching Qgd (nC) Configuration
|
Original
|
IRF630S,
SiHF630S
SMD-220
SMD-220
18-Jul-08
smd e3a
IRF630S
SiHF630S-E3
IRF630STRLPBF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
|
Original
|
IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
IRF630S,
SiHF630S
2002/95/EC
O-263)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
IRF630STRLPBF
Abstract: No abstract text available
Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
IRF630S,
SiHF630S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF630STRLPBF
|
PDF
|
AN609
Abstract: IRF630S SiHF630S
Text: IRF630S_RC, SiHF630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
IRF630S
SiHF630S
AN609,
12-Mar-10
AN609
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
|
Original
|
IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
|
Original
|
IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
IRF630S
Abstract: SiHF630S SiHF630S-E3 SiHF630S-GE3
Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
IRF630S,
SiHF630S
2002/95/EC
O-263)
11-Mar-11
IRF630S
SiHF630S-E3
SiHF630S-GE3
|
PDF
|
IRF630 MOSFET driver
Abstract: SiHF630 irf630 IRF630PBF SiHF630-E3 IRF630 p
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
|
Original
|
IRF630,
SiHF630
O-220
O-220
18-Jul-08
IRF630 MOSFET driver
irf630
IRF630PBF
SiHF630-E3
IRF630 p
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
|
Original
|
IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
|
Original
|
IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 43 • Dynamic dV/dt Rating Qgs (nC) 7.0 • Repetitive Avalanche Rated 23 • Fast Switching Qgd (nC) Configuration
|
Original
|
IRF630S,
SiHF630S
SMD-220
18-Jul-08
|
PDF
|
ca3103
Abstract: 2n2222 -331 Cd4093 SiHF
Text: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2
|
Original
|
AN-937
ca3103
2n2222 -331
Cd4093
SiHF
|
PDF
|
