A2ND
Abstract: No abstract text available
Text: JEDEC STANDARD Marking, Symbols, and Labels for Identification of Lead Pb Free Assemblies, Components, and Devices JESD97 MAY 2004 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and
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JESD97
A2ND
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VUI72-16NO1
Abstract: VUI72 vui72-16 JESD97 VUM25-05E vui7216no1 VUI72-16N VUI72-1 JESD-97 D-68623
Text: Product Change Notice PCN No.: 01/05 Customer: all IXYS product type: Package: V1-Pack Description of change: Conversion of the pin hot dip plating from PbSn to Pb-free SnAg3Cu0.5 (e1, JESD97) without undercoat Reason for change: RoHS directive 2002/95/EC
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JESD97)
2002/95/EC
14F12
VBE20-20NO1
VHFD16/29/37-08/12/14/16io1
VUB72-12/16NO1
VUE30-12NO1
VUE50-12NO1
VUI30-12N1
VUI72-16NO1
VUI72-16NO1
VUI72
vui72-16
JESD97
VUM25-05E
vui7216no1
VUI72-16N
VUI72-1
JESD-97
D-68623
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JESD097
Abstract: JESD97 JEDEC J-STD-020 hpc capacitor HPC0402B0R5AGMT1
Text: Statement of RoHS Compliance/Lead-free Status REFERENCE: RoHS, Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment, JEDEC STD 097, JESD97, dated May 2004 Moisture/Reflow Sensitivity Classification…., JEDEC J-STD 020
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JESD97,
CE/2005/73855,
HPC0402A0R5AXMT1
HPC0402B0R5AGMT1
HPC0402A0R5AWMT
1/20th
J-STD-020C
JESD097
JESD97
JEDEC J-STD-020
hpc capacitor
HPC0402B0R5AGMT1
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JESD97
Abstract: ILCX15 i321 ILCX09 ILCX17 ISM72 diode i321 i203 transistor IL3S HC49USM
Text: ILSI America 5458 Louie Lane Reno, NV 89511 775-851-8880 12/14/2006 Pb Free Road Map ILSI America Part Number Series Pb Free Status RoHS Compliance Note Date code of conversion to Pb Free MSL JESD97 HC49USM HC49USM2 HC49USM3 HC49USM5 HC49USM4 HC49USM6 HC49USM8
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JESD97
HC49USM
HC49USM2
HC49USM3
HC49USM5
HC49USM4
HC49USM6
HC49USM8
HC49USM9
ILCX03
JESD97
ILCX15
i321
ILCX09
ILCX17
ISM72
diode i321
i203 transistor
IL3S
HC49USM
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JESD97
Abstract: EBA06DRTN-S23 ABC60DRTN-S99 ANB10DHRN EZM24DRYH AMM12DRZH EZM24DSEH EZC12DREI BF64ABT emc10drmh
Text: Marking Insulator Material Terminal Plating Terminal Material Maximum ABB105DHHN N/A ABB105DHHN Y N JESD97 JESD97 1 260 Deg. C Max 2 Minutes Max.; 3X +150 Deg. C Beryllium Copper Contact Surface: .000010" Gold; Termination: .000100" Pure Tin-Matte PPS ABB40DHHD
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ABB105DHHN
JESD97
ABB40DHHD
ABB92DHRN-S329
JESD97
EBA06DRTN-S23
ABC60DRTN-S99
ANB10DHRN
EZM24DRYH
AMM12DRZH
EZM24DSEH
EZC12DREI
BF64ABT
emc10drmh
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D150*h02l
Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
Text: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark
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STD150NH02L-1
STD150NH02L
STD150NH02L
STD150NH02L-1
D150*h02l
D150N
d150nh02
STD150
STD150NH02L-1 DPAK
0181G
D150Nh02l
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m1 250c fuse
Abstract: at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050
Text: Features • High Performance, Low Power 32-bit AVR Microcontroller – – – – • • • • • • • • • • • • Compact Single-cycle RISC Instruction Set Including DSP Instruction Set Built-in Floating-Point Processing Unit FPU Read-Modify-Write Instructions and Atomic Bit Manipulation
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32-bit
9166D-AVR
m1 250c fuse
at32uc3c
em 234 stepper
dtx 370
DTH block diagram
lta 301
VT 546
Modem basic circuit diagram
EIC 4021
shift registers 4050
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ipc 840
Abstract: JEDEC J-STD-033 JESD97 J-STD-020 J-STD-033
Text: PRODUCT DATA SHEET P7608 Family HIGH POWER INDUCTOR Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Lead-free Pb-free RoHS compliant High Current (to 30A) Low DCR (to 1mΩ) Foil windings Closed magnetic circuit DC-DC Converters
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P7608
with60
P7608-
J-STD-033
J-STD-020
FIN-03101,
ipc 840
JEDEC J-STD-033
JESD97
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0603 footprint IPC
Abstract: 33 1004 0605 INDUCTOR 0705-180M
Text: PRODUCT DATA SHEET P7607 Family SHIELDED POWER INDUCTOR Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Lead-free Pb-free RoHS compliant Magnetic Shielding High Current (to 5A) Low DCR (to 19mΩ) Low profile (2.5 - 5mm) Wide range (1µH – 1000µH)
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P7607
J-STD-033
J-STD-020
FIN-03101,
0603 footprint IPC
33 1004
0605 INDUCTOR
0705-180M
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AT91SAM3U4
Abstract: at91sam3 1N1308 MAR 735 REGULATOR IC 7912 pin identify AT91SAM3U4E SAM3u1 AT91SAM3U 3961 G.E 0x20180
Text: Features • Core • • • • • • – ARM Cortex®-M3 revision 2.0 running at up to 96 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set Memories – From 64 to 256 Kbytes embedded Flash, 128-bit wide access, memory accelerator,
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128-bit
6430F
21-Feb-12
AT91SAM3U4
at91sam3
1N1308
MAR 735
REGULATOR IC 7912 pin identify
AT91SAM3U4E
SAM3u1
AT91SAM3U
3961 G.E
0x20180
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Untitled
Abstract: No abstract text available
Text: STE30NK90Z N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH MOSFET General features Type VDSS RDS on ID Pw STE30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ) s ( ct
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STE30NK90Z
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EEPROM
Abstract: M93C86
Text: M93C86, M93C76, M93C66 M93C56, M93C46 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit 8-bit or 16-bit wide MICROWIRE serial access EEPROM Features • Industry standard MICROWIRE bus ■ Single supply voltage: – 4.5 V to 5.5 V for M93Cx6 – 2.5 V to 5.5 V for M93Cx6-W
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M93C86,
M93C76,
M93C66
M93C56,
M93C46
16-bit
M93Cx6
M93Cx6-W
M93Cx6-R
EEPROM
M93C86
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STMicroelectronics
Abstract: op07 op07 equivalent op07 equivalent single supply OP07CN t2d5
Text: OP07 Very low offset single bipolar operational amplifier Features • Extremely low offset: 150µV/ max. ■ Low input bias current: 1.8nA ■ LOW Vio drift: 0.5µV/°C ■ Ultra stable with time: 2µV/month max. ■ Wide supply voltage range: ±3V to ± 22V
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00V/mV)
OP07C
STMicroelectronics
op07
op07 equivalent
op07 equivalent single supply
OP07CN
t2d5
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tray data for lga16
Abstract: No abstract text available
Text: LIS244AL MEMS motion sensor: 2-axis - ±2g ultracompact linear accelerometer Features • Single voltage supply operation ■ ± 2g full-scale ■ Output voltage, offset and sensitivity are ratiometric to the supply voltage ■ Factory trimmed device sensitivity and offset
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LIS244AL
10000g)
LIS244AL
tray data for lga16
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Z117
Abstract: X117 LIS331AL LIS331ALTR
Text: LIS331AL MEMS inertial sensor: 3-axis - ±2g analog output “nano” accelerometer Features • Single voltage supply operation ■ ±2.0g full-scale ■ Output voltage, offset and sensitivity are ratiometric to the supply voltage ■ Factory trimmed device sensitivity and offset
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LIS331AL
10000g)
LIS331AL
Z117
X117
LIS331ALTR
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Untitled
Abstract: No abstract text available
Text: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s Description P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b OOrder codes e t e l
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M74HC09
DIP-14
SO-14
M74HC09
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f25nm60n
Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
Text: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application
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STB25NM60Nx
STF25NM60N
STP25NM60N
STW25NM60N
O-220,
O-220FP,
O-247
STB25NM60N
STB25NM60N-1
f25nm60n
P25NM60
w25nm60
F25NM60
P25NM60N
w25nm60n
F25NM
TO247 package dissipation
p25n
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2ST5949
Abstract: 0015923C
Text: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC s ct Application ■ 1 u d o 2r P e Audio power amplifier
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2ST5949
2ST2121
2ST5949
0015923C
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GCM 38112
Abstract: Wifi to I2C ST ATUC3A4256S AT32UC3A3 dsp ssb modulation demodulation barcode reader using avr AT32UC3A64 ATUC3A3256 DesignWare Hi-Speed USB On-The-Go Controller AT32UC3A3256S
Text: Features • High Performance, Low Power 32-bit AVR Microcontroller • • • • • • • • • • • • – Compact Single-Cycle RISC Instruction Set Including DSP Instruction Set – Read-Modify-Write Instructions and Atomic Bit Manipulation
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32-bit
51DMIPS/MHz
92DMIPS
66MHz
36MHz
256KBytes,
128KBytes,
64KBytes
32072D04/2011
GCM 38112
Wifi to I2C ST
ATUC3A4256S
AT32UC3A3
dsp ssb modulation demodulation
barcode reader using avr
AT32UC3A64
ATUC3A3256
DesignWare Hi-Speed USB On-The-Go Controller
AT32UC3A3256S
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LD1117
Abstract: LD1117 date code LD1117-18 ld1117c JESD97 LD1117D12TR LD1117S12TR LD1117-33
Text: LD1117 series Low drop fixed and adjustable positive voltage regulators Feature summary • Low dropout voltage 1V TYP. ■ 2.85V Device performances are suitable for SCSI-2 active termination ■ Output current up to 800 mA ■ Fixed output voltage of: 1.2V, 1.8V, 2.5V,
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LD1117
O-220
OT-223
800mA
LD1117 date code
LD1117-18
ld1117c
JESD97
LD1117D12TR
LD1117S12TR
LD1117-33
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st 339
Abstract: JESD97 SSOP28 SSOP-28 ST3243E TSSOP28 15KV
Text: ST3243E ±15KV ESD protected 3 to 5.5V, 400Kbps, RS-232 Transceiver with auto-powerdown General features • ESD protection for RS-232 I/O pins: – ±8kV IEC 1000-4-2 contact discharge – ±15kV human body model ■ 1µA supply current achieved when in autopowerdown
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ST3243E
400Kbps,
RS-232
250Kbps
EIA/TIA-232
SO-28,
SSOP-28,
TSSOP28
flip-chip28
st 339
JESD97
SSOP28
SSOP-28
ST3243E
15KV
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st 2904
Abstract: lm2904 2904Y diode k403 lm2904 so MARKING k403
Text: LM2904 Low power dual operational amplifier Features • Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth unity gain : 1.1MHz (temperature compensated) ■ Very low supply current/op (500µA) essentially independent of supply voltage
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LM2904
100dB
st 2904
lm2904
2904Y
diode k403
lm2904 so
MARKING k403
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ISOWATT218FX
Abstract: HD1530FX ecopack JESD97
Text: HD1530FX High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display Features • STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS ■ LESS SENSITIVE TO OPERATING
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HD1530FX
ISOWATT218FX
ISOWATT218FX
HD1530FX
ecopack
JESD97
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Untitled
Abstract: No abstract text available
Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3
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STB160N75F3
STP160N75F3
STW160N75F3
O-220
O-247
STP160N75F3
O-220
O-247
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