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    IGBT 600V 80A Search Results

    IGBT 600V 80A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 600V 80A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75N60

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 75N60

    IXGR60N60C3C1

    Abstract: G60N60 60N60C3 IF110 ISOPLUS247
    Text: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES


    Original     		PDF IXGR60N60C3C1 IC110 40-100kHz 247TM IF110 60N60C3C1 IXGR60N60C3C1 G60N60 60N60C3 IF110 ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IC110 IXXH75N60B3D1 125ns O-247 IF110 75N60B3

    G60N60

    Abstract: IF110 ISOPLUS247 IXGR60N60C3C1 I40-13 Ultra fast diode
    Text: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES


    Original     		PDF IXGR60N60C3C1 IC110 40-100kHz ISOPLUS247TM IF110 60N60C3C1 1-15-10-A G60N60 IF110 ISOPLUS247 IXGR60N60C3C1 I40-13 Ultra fast diode

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGR60N60C3C1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES


    Original     		PDF IXGR60N60C3C1 IC110 40-100kHz ISOPLUS247TM IF110 60N60C3C1 1-15-10-A

    375A1

    Abstract: IXXH75N60C3
    Text: Advance Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3 IC110 O-247 062in. 75N60C3 375A1 IXXH75N60C3

    75N60B3D1

    Abstract: IXXH75N60B3
    Text: Advance Technical Information IXXH75N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60B3 IC110 125ns O-247 062in. 75N60B3D1 IXXH75N60B3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH75N60C3 O-247 Non60 75N60C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT MMIX1G320N60B3 Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF MMIX1G320N60B3 IC110 320N60B3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF MMIX1G320N60B3 IC110 320N60B3

    75N60B3D1

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH75N60B3 125ns O-247 75N60B3D1

    75n60

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3 IC110 O-247 062in. 75N60C3 75n60

    Untitled

    Abstract: No abstract text available
    Text: APT40GT60BR APT40GT60BR 600V 80A Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		PDF APT40GT60BR 150KHz T0-247

    APT40GT60BR

    Abstract: No abstract text available
    Text: APT40GT60BR 600V, 80A, VCE ON = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. TO


    Original     		PDF APT40GT60BR 150KHz Collector46 APT40GT60BR

    Thunderbolt IGBT

    Abstract: No abstract text available
    Text: APT40GT60BR 600V, 80A, VCE ON = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. TO


    Original     		PDF APT40GT60BR 150KHz O-247 Thunderbolt IGBT

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH75N60C3D1 O-247 IF110 75N60C3

    150-A54

    Abstract: No abstract text available
    Text: Advance Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 150-A54

    IXXH75N60C3D1

    Abstract: 75N60C3
    Text: Preliminary Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 IXXH75N60C3D1

    IXGH48N60B3C1

    Abstract: IF110 48n60 DS100140A IXGH48N60
    Text: Preliminary Technical Information IXGH48N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IXGH48N60B3C1 IC110 116ns O-247 IF110 48N60B3C1 IXGH48N60B3C1 IF110 48n60 DS100140A IXGH48N60

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH48N60B3C1 = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IC110 IXGH48N60B3C1 116ns O-247 IF110 48N60B3C1

    g60n

    Abstract: 60N60C
    Text: GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		PDF IXGR60N60C3D1 IC110 IF110 60N60C3 01-15-10-E g60n 60N60C

    75N60B3

    Abstract: IXXH75N60B3D1 75n60
    Text: Advance Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 IXXH75N60B3D1 75n60

    Thunderbolt

    Abstract: APT40GT60BR
    Text: APT40GT60BR 600V 80A Thunderbolt IGBT TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		PDF APT40GT60BR O-247 150KHz MIL-STD-750 Thunderbolt APT40GT60BR

    th 2190

    Abstract: No abstract text available
    Text: APT40GT60BR APT40GT60BR 600V 80A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		PDF APT40GT60BR O-247 150KHz th 2190