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    IXXH75N60C3D1 Price and Stock

    IXYS Corporation IXXH75N60C3D1

    IGBT 600V 150A 750W TO247
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    DigiKey IXXH75N60C3D1 Tube 300
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    Mouser Electronics IXXH75N60C3D1
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    Future Electronics IXXH75N60C3D1 Tube 25 Weeks 30
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    TTI IXXH75N60C3D1 Tube 300
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    TME IXXH75N60C3D1 1
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    Littelfuse Inc IXXH75N60C3D1

    Disc Igbt Xpt-Genx3 To-247Ad/ Tube |Littelfuse IXXH75N60C3D1
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    Newark IXXH75N60C3D1 Bulk 300
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    IXYS Integrated Circuits Division IXXH75N60C3D1

    IGBT DIS.DIODE SINGLE 75A 600V XPT TO247
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    Ozdisan Elektronik IXXH75N60C3D1
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    IXXH75N60C3D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXXH75N60C3D1 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 150A 750W TO247 Original PDF

    IXXH75N60C3D1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH75N60C3D1 O-247 IF110 75N60C3

    150-A54

    Abstract: No abstract text available
    Text: IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 150-A54

    150-A54

    Abstract: No abstract text available
    Text: Advance Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 150-A54

    IXXH75N60C3D1

    Abstract: 75N60C3
    Text: Preliminary Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 IXXH75N60C3D1