mitsumi 455khz
Abstract: No abstract text available
Text: ICs for FM/AM Tuner AN7002K, AN7002S Single Chip ICs for AM Radio Unit : mm 22 21 20 19 18 17 16 15 14 13 12 M Di ain sc te on na tin nc ue e/ d 19.1±0.3 1 2 3 4 5 6 7 8 9 10 11 0.5±0.1 0.9±0.25 AN7002K The AN7002K and the AN7002S are the single chip ICs
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AN7002K,
AN7002S
AN7002K
AN7002S
AN7002K
mitsumi 455khz
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Untitled
Abstract: No abstract text available
Text: 2N3749 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-111 isolated package features a 180 degree lead orientation.
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2N3749
MIL-PRF-19500/315
O-111
H28/1
FED-STD-H28/1)
T4-LDS-0328,
190-32UNF-2A
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UV916
Abstract: UV916m PHILIPS tuner schematic TDA receiver QAM schematic diagram 16 QAM Transmitter block diagram HP3764A AN96048 HP8657A Signal mixing NE602 TDA 4600
Text: TDA 8046H multi-mode QAM demodulator Application note AN 96048 Philips Semiconductors Abstract The TDA8046H is a multi-mode QAM demodulator for Digital Video Broadcast applications on cable networks. It generates control voltages for external AGC, Carrier, and Clock recovery control loops. Demodulation to base band I and Q signals is done in the digital domain. A digital half Nyquist filter with a roll-off factor of 15% or 20% satisfies the U.S. and
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8046H
TDA8046H
UV916
UV916m
PHILIPS tuner schematic TDA
receiver QAM schematic diagram
16 QAM Transmitter block diagram
HP3764A
AN96048
HP8657A
Signal mixing NE602
TDA 4600
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Untitled
Abstract: No abstract text available
Text: AWL9565 802.11a/n Power Ampliier & Switch with 802.11 b/g/n RX/TX/ Bluetooth Switch Data Sheet - Rev 2.0 FEATURES • • • • • • • • • • • • • 3% Dynamic EVM @ Pout = +18 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps 30 dB of Linear Power Gain
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AWL9565
11a/n
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MSG33001
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 1.20±0.05 2 0.15 min. 1 0.23+0.05 –0.02
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2002/95/EC)
MSG33001
MSG33001
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IC12080
Abstract: MSG33002
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33002 SiGe HBT type For low-noise RF amplifier Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03
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2002/95/EC)
MSG33002
IC12080
MSG33002
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tx 2G
Abstract: TX-2G SP3T, SURFACE MOUNT AWL9565 power amplifier 5 ghz
Text: AWL9565 802.11a/n Power Amplifier & Switch with 802.11 b/g/n RX/TX/ Bluetooth Switch Data Sheet - Rev 2.0 FEATURES • • • • • • • • • • • • • 3% Dynamic EVM @ Pout = +18 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps 30 dB of Linear Power Gain
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11a/n
AWL9565
tx 2G
TX-2G
SP3T, SURFACE MOUNT
AWL9565
power amplifier 5 ghz
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MSG33003
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33003 SiGe HBT type For low-noise RF amplifier Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03
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2002/95/EC)
MSG33003
MSG33003
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0433A LB11988D Monolithic Digital IC Fan Motor Driver ht t p://onse m i.c om Overview The LB11988D is a 3-phase motor driver IC that is optimal for driving ventilation fan motors. Features • 3-Phase full-wave current-linear drive system.
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ENA0433A
LB11988D
LB11988D
A0433-8/8
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HP3764A
Abstract: TDA8045 BER SER 32QAM modulation 32QAM HP8782B- BLOCK DIAGRAM NE602 ne602 32 QAM Transmitter block diagram TDA8714 siemens filter
Text: APPLICATION NOTE QAM demodulation with the TDA 8045 Version 1.0 AN95088 Philips Semiconductors Version 1.0 Application Note AN95088 Abstract The TDA8045 is a QAM demodulator for Digital Video Broadcast applications on cable networks. It performs control voltages for external AGC, Carrier, and Clock recovery control loops. Demodulation to base band I and Q signals is done in the digital domain. A digital half Nyquist filter with a roll-off factor of 20% satisfies the U.S. market
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AN95088
TDA8045
symbo15)
10T0T00
T00T0T
T00010
T0T00
T0100
HP3764A
BER SER 32QAM modulation
32QAM
HP8782B-
BLOCK DIAGRAM NE602
ne602
32 QAM Transmitter block diagram
TDA8714
siemens filter
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Untitled
Abstract: No abstract text available
Text: EL1527 Data Sheet Dual Channel Medium Power Differential Line Driver The EL1527 is a very low power dual channel differentiated amplifier designed for central office and customer premise line driving for DMT ADSL solutions. This device features a high drive capability of 400mA while consuming only 7.5mA
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EL1527
FN7341
EL1527
400mA
-75dBc,
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0954 LB11683H Monolithic Digital IC Three-Phase Sensorless Motor Driver ht t p://onse m i.c om Overview The LB11683H is a three-phase full-wave current-linear-drive motor driver IC. It adopts a sensorless control system without the use of a Hall effect device. For quieter operation, the LB11683H features a current soft switching circuit
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ENA0954
LB11683H
LB11683H
A0954-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0300A LB11988HR Monolithic Digital IC Fan Motor Driver ht t p://onse m i.c om Overview LB11988HR is a motor driver IC optimal for driving the DC fan motors. Functions • Three-phase full-wave current linear drive • Built-in current limiter circuit
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ENA0300A
LB11988HR
LB11988HR
A0300-6/6
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3315 hall
Abstract: No abstract text available
Text: Ordering number : ENA0377A LB11988V Monolithic Digital IC Fan Motor Driver ht t p://onse m i.c om Overview LB11988V is a motor driver IC optimal for driving the DC fan motors. Functions • Three-phase full-wave current linear drive • Built-in current limiter circuit
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ENA0377A
LB11988V
LB11988V
A0377-6/6
3315 hall
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2SC2021LN
2SB821
2SB1276
2SC2021MLN
O-92L
O-92LS
2SB737
V2SD786
2SA1137
2SC1740
2SC1740 transistor
A1757
B1130AM
2SD2061F
2SD1466
2SC5083
B1236A
mos-fet darlington
2sc4721
transistor 2sa1819
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Untitled
Abstract: No abstract text available
Text: 3 Stanford Microdevices Product Description SSW-308 Stanford M icrodevices’ SSW -308 is a high perfom ance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-3 GHz Low Cost G a As MMIC SPDT Switch
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SSW-308
28dBm.
-45Cto
500MHz
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TRANSISTOR 2688
Abstract: CE 2711 2SA1150 2SC2682
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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TV25TÃ
2SA1150
TRANSISTOR 2688
CE 2711
2SC2682
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iw 1688
Abstract: 2sa835 2SA837 2SA843 2SA839 2SC1661 55AF2 SC15010
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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100Hz)
2SA843
220MHz,
iw 1688
2sa835
2SA837
2SA839
2SC1661
55AF2
SC15010
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2SC1815
Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
Text: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL
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2sc1815
2SC1815
2SC1815GR
2SC1815-GR
2SC1815Y
2sc1815 transistor
2SC1815-Y
asC1815
2SC18150
lbfb
2SC1815Y GR
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92-0151
Abstract: 2SB744 2SB744 nec 2SD794 TI31 S405A 2SB744A 2SD794A T460 1444A
Text: NEC NEC NEC C om plem entary Pair T ransistor Series f 2SB744,744A/2SD794,794A PN P/N PN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o m h & 1 ]5 ü w « t /•’; is - o u t f f l r K7>r - r ^ u j a i T- *> »>, o / J^ ífí, Í2 ( R, = 8
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2SB744
44A/2SD794
2SB744A
2SD794
2SD794A
i0942
92-0151
2SB744 nec
TI31
S405A
T460
1444A
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2Sc422
Abstract: outline 84B MTF-156
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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MTF-206
MTF-207
MTF-208
MTD-306
MTD-307
MTD-308
2Sc422
outline 84B
MTF-156
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Untitled
Abstract: No abstract text available
Text: 57. SGS-THOMSON SD4017 •m RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION P o u t = 30 W MIN. WITH 7.5 dB GAIN
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SD4017
SD4017
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B50KE
Abstract: cd-rom rf amplifier G31 transistor
Text: SONY CXA2525M/N RF Amplifier for CD Player and CD-ROM Description CXA2525M 20 pin SOP Plastic The CXA2525M/N is an 1C for RF signal processing of CD player and CD-ROM. CXA2525N 20 pin SSOP (Plastic) Features • Wide-band RF amplifier. (RF signal fc £ 12MHz)
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CXA2525M/N
CXA2525M
CXA2525N
CXA2525M/N
12MHz)
Ts300mil
OP-20P-L01
P020-P-0300-A
CXA2525N
B50KE
cd-rom rf amplifier
G31 transistor
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OX36D-S-MR-R
Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
Text: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing
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12000-square-meter
IS09000-2000,
Min15
MXF3200
MXF3200A
12WCMXF3200)
6WCMXF3200A)
OX36D-S-MR-R
dox5
18M08
transistor z7m
st z7m
Bowei Integrated Circuits
oxln50d
TXM11
tt 2246
transistor K117
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