UV916
Abstract: UV916m PHILIPS tuner schematic TDA receiver QAM schematic diagram 16 QAM Transmitter block diagram HP3764A AN96048 HP8657A Signal mixing NE602 TDA 4600
Text: TDA 8046H multi-mode QAM demodulator Application note AN 96048 Philips Semiconductors Abstract The 8046H is a multi-mode QAM demodulator for Digital Video Broadcast applications on cable networks. It generates control voltages for external AGC, Carrier, and Clock recovery control loops. Demodulation to base band I and Q signals is done in the digital domain. A digital half Nyquist filter with a roll-off factor of 15% or 20% satisfies the U.S. and
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8046H
TDA8046H
UV916
UV916m
PHILIPS tuner schematic TDA
receiver QAM schematic diagram
16 QAM Transmitter block diagram
HP3764A
AN96048
HP8657A
Signal mixing NE602
TDA 4600
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S40S
Abstract: IrDA msp430 F6633 msp430x5 01A14 F6632 SLAS566C
Text: MSP430F663x www.ti.com SLAS566C – JUNE 2010 – REVISED AUGUST 2012 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active: 270 µA/MHz at 8 MHz, 3.0 V, Flash Program
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MSP430F663x
SLAS566C
16-Bit
20-MHz
S40S
IrDA msp430
F6633
msp430x5
01A14
F6632
SLAS566C
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Diode smd code PJ 04
Abstract: No abstract text available
Text: MSP430F663x SLAS566B – JUNE 2010 – REVISED AUGUST 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active:
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MSP430F663x
SLAS566B
16-Bit
20-MHz
Diode smd code PJ 04
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TPCA8046-H
Abstract: No abstract text available
Text: TPCA8046-H 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅥ-H TPCA8046-H ○ スイッチングレギュレータ用 ○ モータドライブ ○ DC-DC コンバータ用 4 : QSW = 15 nC (標準) • オン抵抗が低い。 : RDS (ON) = 3.5 mΩ (標準)
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TPCA8046-H
TPCA8046-H
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KFG2G16Q2A
Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFG2G16Q2A-DEBx)
KFH4G16Q2A-DEBx)
KFG2G16Q2A
KFH4G16Q2A
80x11
KFG2G16Q2A)
KFH4G16Q2A)
KFG2G16Q2A
0307h
0719h
63FBGA
KFG2G16
onenand
oneNand flash
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63FBGA
Abstract: KFG1G16Q2B onenand
Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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KFG1G16Q2B-DEBx)
KFG1G16Q2B
80x11
KFG1G16x2B)
63FBGA
KFG1G16Q2B
onenand
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Untitled
Abstract: No abstract text available
Text: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D
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RX64M
R01DS0173EJ0100
120-MHz
32-bit
512-KB
1588-compliant
12-bit
PLQP0176KB-A
PLQP0144KA-A
PLQP0100KB-A
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Samsung oneNand Mux
Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
MuxOneNAND512
KFM1216Q2M
48FBGA
512Mb
Samsung oneNand Mux
samsung 1Gb nand flash
SAMSUNG 256Mb NAND Flash Qualification Report
KFM1216Q2M
8017h
2112b
1001Ah
803FH
samsung 2GB Nand flash 121 pins
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Untitled
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM1G16Q2A-DEBx)
KFN2G16Q2A-DEBx)
KFXXX16Q2A
80x11
KFG1G16Q2A)
KFN2G16Q2A)
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10072h
Abstract: structure chart of samsung company
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
KFM1216Q2M
48FBGA
512Mb
10072h
structure chart of samsung company
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IN329
Abstract: No abstract text available
Text: 19-3384; Rev 1; 9/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable Hex/Quad Power-Supply Sequencers/Supervisors with ADC The MAX6870/MAX6871 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs, two auxiliary inputs, and four
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MAX6870/MAX6871
MAX6870
MAX6871
MAX6870EVC
MAX6870ETJ
21-0144F
T3277-2*
MAX6870ETJ-T
MAX6870ETJ+
IN329
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CM 6631
Abstract: SLAS566B s7 300 cpu 315 2 dp hardware
Text: MSP430F663x SLAS566B – JUNE 2010 – REVISED AUGUST 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active:
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MSP430F663x
SLAS566B
16-Bit
20-MHz
CM 6631
SLAS566B
s7 300 cpu 315 2 dp hardware
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SLC NAND endurance 100k
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
SLC NAND endurance 100k
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samsung 2GB Nand flash 121 pins
Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
samsung 2GB Nand flash 121 pins
samsung 2GB Nand flash TOGGLE
sensing nand flash memory SAMSUNG Electronics
Toggle DDR NAND flash
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4GB MLC NAND
Abstract: SAMSUNG NAND Flash MLC
Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM2G16Q2M-DEBx)
KFN4G16Q2M-DEBx)
KFM2G16Q2M
KFN4G16Q2M
80x11
KFM2G16Q2M)
KFN4G16Q2M)
4GB MLC NAND
SAMSUNG NAND Flash MLC
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Untitled
Abstract: No abstract text available
Text: Datasheet RX62T Group Renesas MCUs R01DS0096EJ0100 Rev.1.00 Apr 20, 2011 100-MHz 32-bit RX MCUs, FPU, 165 DMIPS, 12-bit ADC 3 S/H circuits, double data register, amplifier, comparator : two units, 10-bit ADC one unit, the three ADC units are capable of simultaneous 7-ch. sampling, 100-MHz PWM (two three-phase complementary
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RX62T
R01DS0096EJ0100
100-MHz
32-bit
12-bit
10-bit
IEEE-754
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Diode smd s6 95
Abstract: No abstract text available
Text: MSP430F663x SLAS566B – JUNE 2010 – REVISED AUGUST 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active:
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MSP430F663x
SLAS566B
16-Bit
20-MHz
Diode smd s6 95
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BGA reflow guide
Abstract: No abstract text available
Text: MSP430F663x SLAS566B – JUNE 2010 – REVISED AUGUST 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active:
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MSP430F663x
SLAS566B
16-Bit
20-MHz
BGA reflow guide
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R5F56218BNFP
Abstract: R5F562N8BNFP R5F56218 R5F56216 r5f562 RX621 ir234 IR247 sdc 7500 ir153
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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IAD V2.3
Abstract: DELIC-PB Software Users Manual iomu allegro micro DELIC-LC
Text: D E L I C - P B S o f t w a r e U se r’ s M an u a l , D S 1 , N o v . 2 00 0 DELIC-PB DSP Embedded Line and Port Interface Controller PEB 20571 Version 2.3 Wi r ed Communications N e v e r s t o p t h i n k i n g . Edition 2000-11-21 Published by Infineon Technologies AG,
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D-81541
IOM-2000
IAD V2.3
DELIC-PB Software Users Manual
iomu
allegro micro
DELIC-LC
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MAX6875ETJ
Abstract: MAX6874 MAX6874ETJ MAX6875 801dh MR811
Text: 19-3438; Rev 0; 10/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable, Hex/Quad, Power-Supply Sequencers/Supervisors Features The MAX6874/MAX6875 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs and general-purpose logic
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MAX6874/MAX6875
MAX6874
MAX6875
MAX6875ETJ
MAX6874ETJ
801dh
MR811
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OneNAND
Abstract: 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 NAND Flash MLC
Text: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)
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KFW4G16Q2M-DEB6)
KFH2G16Q2M-DEB6)
KFG1G16Q2M-DEB6)
KFG1G16Q2M-DEB6
63FBGA
KFH2G16Q2M-DEB6
KFW4G16Q2M-DEB6
OneNAND
KFG1G16Q2M-DEB6
KFH2G16Q2M-DEB6
KFW4G16Q2M-DEB6
NAND Flash MLC
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Untitled
Abstract: No abstract text available
Text: TPCA8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOS -H TPCA8046-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm 1.27 0.4 ± 0.1 High-speed switching • Small gate charge: QSW = 15 nC (typ.)
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TPCA8046-H
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Untitled
Abstract: No abstract text available
Text: 19-3439; Rev 0; 10/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable, Hex/Quad, Power-Supply Sequencers/Supervisors Features The MAX6872/MAX6873 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs and four general-purpose logic
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MAX6872/MAX6873
MAX6872
MAX6873
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