MSG33001
Abstract: No abstract text available
Text: Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 5˚ 0.80±0.05 1.20±0.05 • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification
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MSG33001
MSG33001
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 1.20±0.05 0.80±0.05 • Compatible between high breakdown voltage and high cutoff frequency
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MSG33001
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MSG33001
Abstract: No abstract text available
Text: Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 5˚ 0.80±0.05 1.20±0.05 • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification
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MSG33001
MSG33001
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 1.20±0.05 0.80±0.05 • Compatible between high breakdown voltage and high cutoff frequency
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MSG33001
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MSG33001
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG33001 SiGe HBT type For low-noise RF amplifier Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 1.20±0.05 2 0.15 min. 1 0.23+0.05 –0.02
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MSG33001
MSG33001
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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transistor marking 7D
Abstract: No abstract text available
Text: Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package Each transistor is separated
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MSG36E31
MSG33003
MSG33001
transistor marking 7D
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Untitled
Abstract: No abstract text available
Text: Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package Each transistor is separated
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MSG36E41
MSG33004
MSG33001
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SiGE HBT
Abstract: V 027
Text: New Strike a balance between high breakdown voltage and high cut-off frequency. High breakdown voltage SiGe HBT for general RF use Overview Excellent high-frequency performance and high breakdown voltage have been achieved by using the 0.25µm SiGe HBT.
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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification
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MSG36E41
MSG33004
MSG33001
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification
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2002/95/EC)
MSG36E31
MSG33003
MSG33001
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification
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2002/95/EC)
MSG36E41
MSG33004
MSG33001
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MSG33001
Abstract: MSG33004 MSG36E41
Text: Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package Each transistor is separated
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MSG36E41
MSG33004
MSG33001
MSG33001
MSG33004
MSG36E41
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transistor marking 7D
Abstract: No abstract text available
Text: Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package Each transistor is separated
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MSG36E31
MSG33003
MSG33001
transistor marking 7D
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MSG33001
Abstract: common collector amplifier circuit designing MSG33003 MSG36E31
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification
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MSG36E31
MSG33003
MSG33001
MSG33001
common collector amplifier circuit designing
MSG33003
MSG36E31
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MSG33001
Abstract: MSG33004 MSG36E41
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification
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MSG36E41
MSG33004
MSG33001
MSG33001
MSG33004
MSG36E41
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MSG33001
Abstract: MSG33003 MSG36E31
Text: Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package Each transistor is separated
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MSG36E31
MSG33003
MSG33001
MSG33001
MSG33003
MSG36E31
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F-5040
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification
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2002/95/EC)
MSG36E31
MSG33003
MSG33001
F-5040
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier • Features Unit: mm • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification
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2002/95/EC)
MSG36E41
MSG33004
MSG33001
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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