GT80J101A
Abstract: No abstract text available
Text: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT80J101A High Power Switching Applications • Enhancement-Mode • High Speed: tf = 0.40 µs max (IC = 80 A) • Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
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GT80J101A
Characteristics00
GT80J101A
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GT80J101
Abstract: No abstract text available
Text: GT80J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N − CHANNEL MOS TYPE GT80J101 Unit: mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf = 0.40µs Max. Low Saturation Voltage : VCE (sat) = 3.5V (Max.) Enhancement−Mode
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GT80J101
2-10F1C
GT80J101
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GT80J101
Abstract: No abstract text available
Text: GT80J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N − CHANNEL MOS TYPE GT80J101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l High Input Impedance l High Speed : tf = 0.40µs Max. l Low Saturation Voltage : VCE (sat) = 3.5V (Max.) l Enhancement−Mode
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GT80J101
2-10F1C
GT80J101
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80J101
Abstract: GT80J101B
Text: GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.40 µs max (I C = 80 A) • Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A)
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GT80J101B
80J101
GT80J101B
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GT80J101A
Abstract: No abstract text available
Text: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm • Enhancement-Mode • High Speed: tf = 0.40 µs max (IC = 80 A) • Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
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GT80J101A
GT80J101A
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GT80J101A
Abstract: GT80J101
Text: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.40 µs max (IC = 80 A) • Low saturation voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
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GT80J101A
GT80J101A
GT80J101
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GT80J101A
Abstract: No abstract text available
Text: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT80J101A High Power Switching Applications • Enhancement-Mode • High Speed: tf = 0.40 µs max (IC = 80 A) • Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
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GT80J101A
GT80J101A
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Untitled
Abstract: No abstract text available
Text: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm • Enhancement-Mode · High Speed: tf = 0.40 µs max (IC = 80 A) · Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
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GT80J101A
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
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GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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E0010A
BCE0010A
3503C-0109
s5j53
S5783F
GT30J322
S5783
Electronic IH rice cooker
GT50j101
MG30T1AL1
igbt induction cooker
MG60M1AL1
mosfet 500V 50A
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TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106DAA1
/SC-70
YTF612
2SK2381
YTF841
2SK2387
YTF442
2SK2149
YTF613
TOSHIBA MG150N2YS40
mg75n2ys40
MG15N6ES42
mg150n2ys40
2SK150A
toshiba s2530a
2sk270a
MG8N6ES42
MG15G1AL2
mg75j2ys40
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT80J101 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N - CHANNEL M O S TYPE G T 8 0 J 1 01 U n it in m m HIGH P O W ER SWITCHING APPLICATIONS. 2 0.5M AX. • H ig h In p u t Im pedance • H ig h Speed ^3-3 ±0.2 t f = 0 .4 0 / / s M ax.
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GT80J101
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Untitled
Abstract: No abstract text available
Text: GT80J101 HIGH POWER SW ITCHING APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.40^s M ax. Low Saturation Voltage : V cE(sat) = 3-5V(Max.) Enhancement-Mode M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage
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GT80J101
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Untitled
Abstract: No abstract text available
Text: GT80J101 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL MOS TYPE G T 8 0 J 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High. Input Impedance High Speed Low Saturation Voltage Enhancement-Mode t f= 0.40//S Max. VCE(sat) = 3-5V (Max->
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GT80J101
40//S
GT80J
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GT80J101
Abstract: 80J101 2-21F1C J101
Text: TOSHIBA GT80J101 G T 8 0 J 101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -C H A N N E L MOS TYPE HIGH POWER SW ITCHING APPLICATIONS. • High Input Impedance • High Speed • Low Saturation Voltage • Enhancement-Mode tf=0.40^s Max. v CE(sat) = 3-5V (Max.)
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GT80J101
GT80J101
80J101
2-21F1C
J101
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT80J101 GT 8 0 J 1 01 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -C H A N N E L MOS TYPE HIGH POWER SW ITCHING APPLICATIONS. • • • • High Input Impedance High Speed Low Saturation Voltage Enhancement-Mode tf=0.40/¿s Max. V C E (sat) = 3-5V(Max.)
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GT80J101
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT80J101 GT 8 0 J 1 01 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -C H A N N E L MOS TYPE HIGH POWER SW ITCHING APPLICATIONS. • • • • High Input Impedance High Speed Low Saturation Voltage Enhancement-Mode tf=0.40/¿s Max. V C E (sat) = 3-5V(Max.)
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GT80J101
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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