GRM31CR61H106KA12
Abstract: GRM31CR61H106 cap 2220 10uf sh 604
Text: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data Murata Global Part No Size inch/mm Temp. Chara. Cap.Value Cap.Tol. Volt. GRM31CR61H106KA12 1206/3216 X5R 10uF +/-10% 50V 1. Dimension 3. Impedance/ESR - Frequency Equipment: HP4294A(16044A)
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GRM31CR61H106KA12
HP4294A
6044A)
HP4284A
180mm
LLL15)
330mm
GRM31CR61H106KA12
GRM31CR61H106
cap 2220 10uf
sh 604
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Untitled
Abstract: No abstract text available
Text: User's Guide SBOU121 – June 2012 INA827EVM This user's guide describes the characteristics, operation, and use of the evaluation module EVM for the INA827. The EVM is designed to evaluate the performance of the device in both single- and dual-supply configurations. This document also includes the schematic, printed circuit board (PCB) layouts, and a
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SBOU121
INA827EVM
INA827.
INA827EVM.
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transistor j241
Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448
Text: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of
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AFT18P350--4S2L
AFT18P350-4S2LR6
DataAFT18P350--4S2L
4/2013Semiconductor,
transistor j241
aft18P350-4
x3c19p1
j485
transistor j449
j448
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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ATC600F241JT250XT
Abstract: GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT AFT09MS031NR1 inductor 50 NH GRM31CR61H106KA12
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of
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AFT09MS031N
O-270-2
AFT09MS031NR1
AFT09MS031NR1
AFT09MS031GNR1
13ogo,
8/2012Semiconductor,
ATC600F241JT250XT
GRM31CR61H106KA12L
ATC100A220JT150XT
ATC600F220JT250XT
inductor 50 NH
GRM31CR61H106KA12
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from
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AFT05MS031N
AFT05MS031NR1
AFT05MS031GNR1
AFT05MS031NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT21S240-12S Rev. 0, 4/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
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AFT21S240--12S
AFT21S240-12SR3
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GRM0222C1C330GD05
Abstract: No abstract text available
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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GRM55DR72E334KW01#
GRM55DR72E474KW01#
GRM55DR72E684KW01#
GRM55DR72E105KW01#
GRM55DR72D334KW01#
GRM55DR72D474KW01#
GRM55DR72D684KW01#
200Vdc
250Vdc
GRM55DR72D105KW01#
GRM0222C1C330GD05
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MURATA GRM
Abstract: GRM31CR71E106KA12L GRM31 Murata GRM32ER61C476M GRM31CR61H106K GRM32ER71E226M grm32er71a476m MURATA GRM31 4.7uF 0603 X7R GRM18 Murata X7R
Text: CHIP MONOLITHIC CERAMIC CAPACITOR GRM series / Hi-Cap 1uF and over Features 1. TA chip capacitor replacement product lineup is available in X7R (X7S, X7T, X7U), X6S(X6T) and X5R temperature characteristics with a capacitance of 1uF and larger. 2. The line of high volumetric capacitance ceramic chip capacitors is available in 2.5V,4V, 6.3V, 10V, 16V,
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FM7500U-092-MAY09
MURATA GRM
GRM31CR71E106KA12L
GRM31 Murata
GRM32ER61C476M
GRM31CR61H106K
GRM32ER71E226M
grm32er71a476m
MURATA GRM31
4.7uF 0603 X7R
GRM18 Murata X7R
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J221
Abstract: CW12010T0050G
Text: Freescale Semiconductor Technical Data Document Number: A2I25D012N Rev. 0, 9/2014 RF LDMOS Wideband Integrated Power Amplifiers The A2I25D012N wideband integrated power amplifier is optimized to function with a single multi-band circuit usable from 2300 to 2690 MHz. This
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A2I25D012N
A2I25D012N
A2I25D012NR1
A2I25D012GNR1
J221
CW12010T0050G
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A9M15
Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
A9M15
AFT09MS015N
TRANSISTOR Z10
D55295
815 transistor
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Untitled
Abstract: No abstract text available
Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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MMRF1021N
MMRF1021NT1
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A5M06
Abstract: Transistor Z17
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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AFT05MS006N
AFT05MS006NT1
A5M06
Transistor Z17
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Untitled
Abstract: No abstract text available
Text: SC2308A 600kHz Step-Up Switching Regulator with 2.2A, 45V Switch POWER MANAGEMENT Features Description Input Voltage Range: 2.6V to 20V Boost and SEPIC Topologies Up to 40V Output in Boost Topology Integrated 2.2A/45V Switch
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SC2308A
600kHz
A/45V
SC2308A
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ATC600F470BT250XT
Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of
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AFT05MS031N
AFT05MS031NR1
AFT05MS031GNR1
DataAFT05MS031N
4/2013Semiconductor,
ATC600F470BT250XT
ATC600F241JT250XT
CWCR0805
0908SQ-27NGLC
Z27 transistor
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NI-880XS-2
Abstract: J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S aft18s290-13s AFT18S290 ATC100B0R4BT500XT nichicon HD
Text: Document Number: AFT18S290−13S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.
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AFT18S290-13S
AFT18S290-13SR3
20luding
NI-880XS-2
J416
J453
C5750X7S2A106M230KB
NI-880XS-2L4S
AFT18S290
ATC100B0R4BT500XT
nichicon HD
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GRM21BR61E106KA73L
Abstract: GRM21BR61E226M GRM32ER7YA106KA12L GRM, MURATA GRM32ER61C476KE15L GRM32ER71H106 GRM188R61E106MA73L GRM31CR61E226KE15L GRM319R61A226ME15D GRM188C80E106ME47D
Text: CHIP MONOLITHIC CERAMIC CAPACITOR GRM series / Hi-Cap 1uF and over Features 1. TA chip capacitor replacement product lineup is available in X7R (X7S, X7T, X7U), X6S(X6T) and X5R temperature characteristics with a capacitance of 1uF and larger. 2. The line of high volumetric capacitance ceramic chip capacitors is available in 2.5V,4V, 6.3V, 10V, 16V,
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-10Operating
FM7500U-092-Oct
FM7500U-092-Sep
Hi-Cap2010
GRM21BR61E106KA73L
GRM21BR61E226M
GRM32ER7YA106KA12L
GRM, MURATA
GRM32ER61C476KE15L
GRM32ER71H106
GRM188R61E106MA73L
GRM31CR61E226KE15L
GRM319R61A226ME15D
GRM188C80E106ME47D
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AFT504
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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AFT05MS004N
AFT05MS004NT1
AFT504
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Z6 3pin
Abstract: J262 AFT09MS007NT1
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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AFT09MS007N
AFT09MS007NT1
Z6 3pin
J262
AFT09MS007NT1
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ATC600F241JT
Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of
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AFT05MS031N
AFT05MS031NR1
AFT05MS031GNR1
52ogo,
ATC600F241JT
GRM31CR61H106KA12L
atc 17-25
transistor 62
Z27 transistor
J103 transistor 3 pin
AFT05
GRM31CR61H106K
0806SQ-5N5GLC
GRM31CR61H106KA12
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SEMTECH cross
Abstract: No abstract text available
Text: SC2308A 600kHz Step-Up Switching Regulator with 2.2A, 45V Switch POWER MANAGEMENT Features Description Input Voltage Range: 2.6V to 20V Boost and SEPIC Topologies Up to 40V Output in Boost Topology Integrated 2.2A/45V Switch
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SC2308A
600kHz
SC2308A
SEMTECH cross
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transistor j241
Abstract: j241 J241 transistor
Text: Document Number: A2T07H310-24S Rev. 0, 6/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to
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A2T07H310--24S
A2T07H310-24SR6
transistor j241
j241
J241 transistor
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81A7031-50-5F
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth
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A2T07D160W04S
A2T07D160W04SR3
81A7031-50-5F
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GRM21bc81c106
Abstract: GRM155B11 grm155b31a474ke GRM32EB30J107 GRM31CB31 grm1882c1h100 GRM31BR7 GJM0334 GRM188R11H104 GRM033R61A104KE
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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20eristics
ISO14001
C02E-18
GRM21bc81c106
GRM155B11
grm155b31a474ke
GRM32EB30J107
GRM31CB31
grm1882c1h100
GRM31BR7
GJM0334
GRM188R11H104
GRM033R61A104KE
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