Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM1882C1H100JA01p 0603, CH, 10pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging
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GRM1882C1H100JA01p
50Vdc)
180mm
330mm
60ppm/
50Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM1882C1H100JA01p 0603, CH, 10pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging
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GRM1882C1H100JA01p
50Vdc)
180mm
330mm
60ppm/
50Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM15/18/21/31 Data Sheet Monolithic Ceramic Capacitors GRM1882C1H100JA01p 0603, CH, 10pF, 50Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.60mm±0.10mm Code
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GRM15/18/21/31
GRM1882C1H100JA01p
50Vdc)
180mm
330mm
60ppm/
50Vdc
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RD07MUS2B
Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
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AN-900-039-A
RD07MUS2B
763-870MHz
RD07MUS2B:
084YH-G"
RD07MUS2B
870MHz
250mA
characteristic1JA01
GRM1882C1H101JA01
Single-Stage amplifier
GRM2162C1H151JD01E
817MHz
RD07M
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GRM1882C1H100JA01D
Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V
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AN-900-040-A
RD01MUS1
RD07MUS2B
763-870MHz
RD07MUS2B:
086ZE-G"
RD01MUS1:
RD07MUS2B
250mA
GRM1882C1H100JA01D
GRM1882C1H
grm1882c1h4r0cz01d
GRM1882C1H8R0DZ01
GRM1882C1H9R0DZ01D
RPC05-182
LQG11A8N2S00
GRM1882C1H150JA01D
GRM1882C1H120JA01D
GRM1882C1H8R0DZ01D
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ATC100A101JW
Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
Text: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology
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NE5531079A
NE5531079A
HS350-P3
WS260
IR260
PU10752EJ01V0DS
ATC100A101JW
ATC100A1R8BW
ATC100A240JW
GRM31CR72A105KA01
ATC100A270JW
NE5531079A-T1-A
ne5531
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Untitled
Abstract: No abstract text available
Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency
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EGN21C105I2D
14GHz
14GHz
25deg
/-10MHz
45dBm
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EGN26C070I2D
Abstract: No abstract text available
Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
25deg
/-10MHz
EGN26C070I2D
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GRM42-6CH
Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
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GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM39F104Z25
GRM1885C1H100JA01B
GRM39F104Z
GRM188R60J105KA01B
grm219b31a
GRM39CH
GRM40F104Z50
GRM40X7R104K50
GRM188F11C105Z
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B4846
Abstract: S21 Package GRM188B11H102KA01D CS3376C
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C105I2D
/-10MHz
45dBm
/-10MHz
B4846
S21 Package
GRM188B11H102KA01D
CS3376C
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GRM0222C1C330GD05
Abstract: No abstract text available
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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GRM55DR72E334KW01#
GRM55DR72E474KW01#
GRM55DR72E684KW01#
GRM55DR72E105KW01#
GRM55DR72D334KW01#
GRM55DR72D474KW01#
GRM55DR72D684KW01#
200Vdc
250Vdc
GRM55DR72D105KW01#
GRM0222C1C330GD05
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Untitled
Abstract: No abstract text available
Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C160I2D
14GHz
25deg
/-10MHz
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GRM1882C1H100J
Abstract: No abstract text available
Text: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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SGN27C210I2D
655GHz
/-10MHz
48dBm
GRM1882C1H100J
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saw Colpitts circuit design
Abstract: murata marking code for resonators murata saw SARCC315M00BX SARCC433M92BXM0 SARCC433M92 Bandpass filter SAW 2.4 GHz 50 Ohm 43402 SARCC304M30BXL0 SARCC304M30BXM0
Text: !Note Please read rating and !CAUTION for storage and operating, rating, soldering and mounting, handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specification or to transact the approval sheet for product specificaion before ordering.
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6-10 Ghz RF Power 100w amplifier
Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
6-10 Ghz RF Power 100w amplifier
2S110
GSC356-HYB2300
GRM55ER72A475K
EGN26C070I2D
GRM188B11H102KA01D
60Ghz
GaN amplifier 100W
GRM188B31H104KA92D
JESD22-A114
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SMD Transistor 1fw
Abstract: 1FW TRANSISTOR SMD 1FW 43 transistor transistor SMD 12E 1FW smd 1FW 43 smd 1FW transistor 50PIN D-SUB CONNECTORS SMD 1FW 27 1FW 67 transistor
Text: Intelligent Network Controller for Embedded Systems S1S60020 Evaluation Board Technical Manual S5U1S60K02H0100 Rev. 1.2e NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
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S1S60020
S5U1S60K02H0100)
E-08190
SMD Transistor 1fw
1FW TRANSISTOR SMD
1FW 43 transistor
transistor SMD 12E
1FW smd
1FW 43 smd
1FW transistor
50PIN D-SUB CONNECTORS
SMD 1FW 27
1FW 67 transistor
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S1S60000
Abstract: MCR03*J102 resistor motolora
Text: Intelligent Network Controller for Embedded System S1S60000 Technical Manual S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of SEIKO EPSON. SEIKO EPSON reserves the right to make changes to this material without
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S1S60000
S1S60000
E-08190
MCR03*J102 resistor
motolora
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GRP1552C1H680
Abstract: GRP1552 GRP1552C1H120JZ01 GRP1552C1H101JD01 GRM1882C1H150JA01 GRP15X4C1H2R0 GRM2192C2A331JZ01 GRM1882C1H8R0DZ01 GRM1882C1H182JA01
Text: Capacitors Monolithic Ceramic Capacitors Temperature Compensating JIS Temperature Compensating Type 25/50V g e T e L Part Number GRP155 GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C L W Dimensions mm W T e g min. 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3
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25/50V
GRP155
GRM155
GRM188*
GRM216
GRM219
GRM21B
GRM319
GRM31M
GRM31C
GRP1552C1H680
GRP1552
GRP1552C1H120JZ01
GRP1552C1H101JD01
GRM1882C1H150JA01
GRP15X4C1H2R0
GRM2192C2A331JZ01
GRM1882C1H8R0DZ01
GRM1882C1H182JA01
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GRM42-6CH
Abstract: GRM40C0G103J50 GRM1882C1H8R0DZ01 GRM188F11E104Z GRM39F104Z GRM39X7R473K25 GRM1885C1H391JA01J GRM39U2J100D GRM40X7R104K25 GRM40B106K
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
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GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM40C0G103J50
GRM1882C1H8R0DZ01
GRM188F11E104Z
GRM39F104Z
GRM39X7R473K25
GRM1885C1H391JA01J
GRM39U2J100D
GRM40X7R104K25
GRM40B106K
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toshiba lcd power board schematic
Abstract: led lcd inverter schematic alps touch screen S5U13U11P00C100 GRM155B31C104K s1d13u11 toshiba lcd inverter pinout GRM188F11C105ZA01 CCFL inverter pinout toshiba 20X2 LCD DISPLAY PINOUT toshiba
Text: S1D13U11 Display Controller S5U13U11 Evaluation Board User Manual SEIKO EPSON CORPORATION Rev. 1.1 Evaluation board/kit and Development tool important notice 1. This evaluation board/kit or development tool is designed for use for engineering evaluation, demonstration, or development purposes only. Do not use it for other purpose. It is not intended to meet the requirement of design for finished product.
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S1D13U11
S5U13U11
X96A-G-001-01
toshiba lcd power board schematic
led lcd inverter schematic
alps touch screen
S5U13U11P00C100
GRM155B31C104K
toshiba lcd inverter pinout
GRM188F11C105ZA01
CCFL inverter pinout toshiba
20X2 LCD DISPLAY PINOUT toshiba
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2S110
Abstract: GRM188B11H102KA01D
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
/-10MHz
2S110
GRM188B11H102KA01D
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EKZE101
Abstract: No abstract text available
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C210I2D
/-10MHz
48dBm
/-10MHz
EKZE101
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GRM1882C1H100J
Abstract: No abstract text available
Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN16C105MK
25deg
D10MHz
45dBm
/-10MHz
GRM1882C1H100J
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NE5531079A-T1-A
Abstract: ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a
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NE5531079A
NE5531079A
NE5531079A-T1-A
ldmos nec
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