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    Harris Semiconductor G7N60C3D

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    Intersil Corporation HGTG7N60C3D

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    ComSIT USA HGTG7N60C3D 43
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    G7N60C3 Datasheets Context Search

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    G7N60

    Abstract: G7N60C3D zener diode gem HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS 150oC. TA49115. TA49057. G7N60 G7N60C3D zener diode gem HGT1S7N60C3DS9A TA49121

    G7N60C3

    Abstract: g7n60c HGTD7N60C3S9A HGTD7N60C3S HGTP7N60C3 LD26 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 g7n60c HGTD7N60C3S9A LD26 RHRD660

    8508 zener

    Abstract: g7N60C3D g7n60c HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS TM Data Sheet November 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    Original     		PDF HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS 150oC. TA49115. TA49057. 8508 zener g7N60C3D g7n60c HGT1S7N60C3DS9A TA49121

    G7N60C3

    Abstract: G7N60 g7n60c HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		PDF HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 G7N60 g7n60c HGTD7N60C3S9A RHRD660

    G7N60C3

    Abstract: No abstract text available
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3

    g7N60C3D

    Abstract: No abstract text available
    Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3D 150oC. TA49115. TA49057. 140nild g7N60C3D

    G7N60C3D

    Abstract: G7N60C3 G7N60 DIODE 809 marking HGTP7N60C3D RHRD660 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3D 150oC. TA49115. TA49057. 140ns G7N60C3D G7N60C3 G7N60 DIODE 809 marking HGTP7N60C3D RHRD660 HGT1S7N60C3DS HGT1S7N60C3DS9A TA49121

    G7N60C3D

    Abstract: G7N60 TA49121 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D
    Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC • • • • • EMITTER COLLECTOR GATE 600V Switching SOA Capability


    Original     		PDF HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-220AB 140ns 150oC O-262AA HGT1S7N60C3D G7N60C3D G7N60 TA49121 HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D

    g7n60c

    Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
    Text: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging • 14A, 600V at TC = +25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time - 140ns at TJ = +150oC


    Original     		PDF HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 O-220AB 140ns 150oC O-251AA HGTD7N60C3S HGTP7N60C3 g7n60c G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S9A RHRD660

    g7N60C3D

    Abstract: G7N60 G7N60C3 TA49115 TA49121 G7N60c hyperfast diode reference guide HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A
    Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3D 150oC. TA49115. TA49057. 140ns g7N60C3D G7N60 G7N60C3 TA49115 TA49121 G7N60c hyperfast diode reference guide HGT1S7N60C3DS HGT1S7N60C3DS9A

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    g7N60C3D

    Abstract: G7N60 HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
    Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet November 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS 150oC. TA49115. TA49057. g7N60C3D G7N60 HGT1S7N60C3DS9A TA49121

    G7N60

    Abstract: G7N60C3 G7N60C HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60 G7N60C3 G7N60C HGTD7N60C3S9A LD26 RHRD660

    G7N60C3D

    Abstract: G7N60 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121 LD26
    Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    Original     		PDF HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS 150oC. TA49115. TA49057. G7N60C3D G7N60 HGT1S7N60C3D HGT1S7N60C3DS9A TA49121 LD26

    g7N60C3D

    Abstract: G7N60 G7N60C3 C 679 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121 g7n60c
    Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = 25oC • • • • • EMITTER COLLECTOR GATE


    Original     		PDF HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-220AB 140ns 150oC O-262AA HGT1S7N60C3D g7N60C3D G7N60 G7N60C3 C 679 HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121 g7n60c

    igbt 600V

    Abstract: g7n60c TA49121 G7N60C3D 50QL HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D LD26
    Text: HGTP7N60C3D, HGT1S7N60C3DS interrii J a n u a ry . m Data Sheet 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and H G T1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    OCR Scan     		PDF HGTP7N60C3D, HGT1S7N60C3DS HGTP7N60C3D HGT1S7N60C3DS TA49115. TA49057. igbt 600V g7n60c TA49121 G7N60C3D 50QL HGT1S7N60C3D HGT1S7N60C3DS9A LD26

    7N60C3

    Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
    Text: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C


    OCR Scan     		PDF 7N60C3D, HGT1S7N60C3DS O-22QAB O-262AA HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS -800-4-H 7N60C3 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor

    Untitled

    Abstract: No abstract text available
    Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS H A F R R IS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features • . • • • • JEDEC TO-220AB 14A, 600V at TC = +25°C 600V Switching SOA Capability


    OCR Scan     		PDF HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-220AB 140ns O-262AA HGT1S7N60C3D 1-800-4-HARRIS

    G7N60C

    Abstract: 7N60C 627 DIODE 7N60 STA 933 D7N60
    Text: HARRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 Features Packaging J E D E C TO-22QAB • 14A, 600V at Tc = 25 °C • 600V Sw itching SOA Capability • T y p i c a l F a ll T i m e . 1 4 0 n s a t T j = 1 S 0 ° C


    OCR Scan     		PDF HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 O-22QAB O-251 G7N60C 7N60C 627 DIODE 7N60 STA 933 D7N60

    g7N60C3D

    Abstract: T0-262AA
    Text: HGTP7N60C3D, HGT1S7N60C3D, j j ì HARRIS HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features • • • • • • JEDEC TO-22QAB 14A, 600V at Tc = +25°C 600V Switching SOA Capability


    OCR Scan     		PDF HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-22QAB 140ns HGT1S7N60C3D HGT1S7N60C3DS 1-800-4-HARRIS g7N60C3D T0-262AA

    G7N60C3

    Abstract: g7n60c G7N60 TA49115 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 in t e r r ii J a n u a ry . m i D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		PDF HGTD7N60C3S HGTP7N60C3 TA49115. HGTD7N60C3S, HGTP7N60C3 G7N60C3 g7n60c G7N60 TA49115 HGTD7N60C3S9A LD26 RHRD660