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Vishay Siliconix SIHG47N60AE-GE3 MOSFET N-CH 600V 43A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG47N60AE-GE3	Tube	3,763		1	1 $7.05 10 $7.05 100 $7.05 1000 $7.05 10000 $7.05	Buy Now
STMicroelectronics STB37N60DM2AG MOSFET N-CH 600V 28A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STB37N60DM2AG	Cut Tape	2,503		1	1 $7.82 10 $5.312 100 $7.82 1000 $3.3275 10000 $3.3275	Buy Now
	STB37N60DM2AG	Digi-Reel	2,503		1	1 $7.82 10 $5.312 100 $7.82 1000 $3.3275 10000 $3.3275	Buy Now
	STB37N60DM2AG	Reel	2,000		1,000	1 - 10 - 100 - 1000 $3.3275 10000 $3.3275	Buy Now
Mouser Electronics	STB37N60DM2AG		1,003			1 $6.39 10 $4.75 100 $3.59 1000 $3.32 10000 $3.29	Buy Now
Newark	STB37N60DM2AG	Cut Tape	2,975		1	1 $7.03 10 $6.12 100 $5.21 1000 $4.26 10000 $4.26	Buy Now
STMicroelectronics	STB37N60DM2AG		1,003		1	1 $6.26 10 $4.66 100 $3.52 1000 $3.26 10000 $3.26	Buy Now
Avnet Silica	STB37N60DM2AG		1,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip-Germany GmbH	STB37N60DM2AG		82,373			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STB37N60DM2AG		1,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	STB37N60DM2AG		1,419			1 - 10 $5.4144 100 $3.6096 1000 $3.6096 10000 $3.6096	Buy Now
STMicroelectronics STO67N60M6 MOSFET N-CH 600V 34A TOLL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STO67N60M6	Digi-Reel	1,720		1	1 $8.2 10 $5.581 100 $8.2 1000 $3.54038 10000 $3.54038	Buy Now
	STO67N60M6	Cut Tape	1,720		1	1 $8.2 10 $5.581 100 $8.2 1000 $3.54038 10000 $3.54038	Buy Now
Newark	STO67N60M6	Cut Tape	1,795		1	1 $6.34 10 $5.69 100 $4.85 1000 $3.35 10000 $3.27	Buy Now
STMicroelectronics	STO67N60M6				1	1 $7.19 10 $5.1 100 $3.85 1000 $3.48 10000 $3.48	Buy Now
Avnet Silica	STO67N60M6			15 Weeks	1,800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STP7N60M2 MOSFET N-CH 600V 5A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STP7N60M2	Tube	861		1	1 $2.01 10 $2.01 100 $2.01 1000 $0.63184 10000 $0.52938	Buy Now
STMicroelectronics	STP7N60M2		1,548		1	1 $1.38 10 $0.74 100 $0.69 1000 $0.61 10000 $0.61	Buy Now
Avnet Silica	STP7N60M2		1,450	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STP7N60M2		2,550	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STW37N60DM2AG MOSFET N-CH 600V 28A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STW37N60DM2AG	Tube	600		1	1 $6.36 10 $6.36 100 $3.69367 1000 $6.36 10000 $6.36	Buy Now
Avnet Americas	STW37N60DM2AG	Tube			600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics	STW37N60DM2AG		600		1	1 $5.35 10 $5.35 100 $3.34 1000 $3.34 10000 $3.34	Buy Now
Avnet Silica	STW37N60DM2AG			53 Weeks	600	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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7N60 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
7N60	Unisonic Technologies	7.4 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF
7N60A	Unisonic Technologies	7 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
7N60AL-x-TA3-T	Unisonic Technologies	7 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
7N60A-x-TA3-T	Unisonic Technologies	7 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
7N60A-x-TF3-T	Unisonic Technologies	7 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
7N60B	IXYS	Hiperfast IGBT	Original	PDF
7N60C	IXYS	Hiperfast IGBT Lightspeed Series	Original	PDF
7N60C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N60C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N60C3S	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N60L	Unisonic Technologies	7.4 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
7N60L-TA3-T	Unisonic Technologies	7.4 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF
7N60-TA3-T	Unisonic Technologies	7.4 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF

7N60-TF3-T	Unisonic Technologies	7.4 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF

7N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
7N60C Abstract: TO-220 footprint Text: HiPerFASTTM IGBT LightspeedTM Series VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	PDF	7N60C O-220AB O-263 tempera020 728B1 7N60C TO-220 footprint
DIODE 349 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	7N60Z 7N60Z O-220lues QW-R502-349 DIODE 349
DIODE 349 Abstract: 7n60z Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	7N60Z 7N60Z QW-R502-349 DIODE 349
7N60C Abstract: No abstract text available Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series VCES IC25 VCE sat typ tfi = 600 V = 14 A = 2.0 V = 45 ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	7N60CD1 O-220AB O-263 728B1 7N60C
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching	Original	PDF	7N60A 7N60A VQW-R502-111
7n60b Abstract: DS98977 Text: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V VCES IC25 VCE sat tfi = 600 V	Original	PDF	7N60BD1 150ns O-220AB O-263 728B1 7n60b DS98977
7N60 Abstract: No abstract text available Text: 7N60 7 Amps，，600Volts N-Channel MOSFET • Description The 7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.	Original	PDF	Amps600Volts ET7N60 O-220 O220F 7N60
7n60b Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	7N60L QW-R502-076 7n60b
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	PDF	7N60-Q 7N60-Q 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-Tt QW-R502-983.
7N60B Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60 Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	7N60L 7N60G QW-R502-076 7N60B 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60
7N60C Abstract: No abstract text available Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 7N60C IXGP 7N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	PDF	7N60C 7N60C O-220AB O-263 O-220 O-220)
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi = 600 V = 14 A = 2.0 V = 150ns Maximum Ratings 600 600 V Continuous	Original	PDF	7N60BD1 150ns O-220AB O-263 728B1
7N60A Abstract: 7N60AL MOSFET 600V 7A Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching	Original	PDF	7N60A 7N60A 7N60AL QW-R502-111 7N60AL MOSFET 600V 7A
7N60C Abstract: TO-220AB footprint Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C	Original	PDF	7N60CD1 7N60CD1 O-220AB O-263 7N60C TO-220AB footprint

Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C	Original	PDF	7N60CD1 O-220AB O-263
UTC7N60L Abstract: 7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode Text: UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	7N60L 7N60L 7N60LL QW-R502-189 UTC7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	PDF	7N60K 7N60K QW-R502-776
7n60a Abstract: mosfet 600V 7A N-CHANNEL 7N60AL Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching	Original	PDF	7N60A 7N60A 7N60AL QW-R502-111. mosfet 600V 7A N-CHANNEL 7N60AL
7N60P Abstract: No abstract text available Text: PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS	Original	PDF	7N60P O-220 O-263 03-21-06B 7N60P
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Maximum Ratings 600 = 1 MΩ V Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A	Original	PDF	7N60C O-220AB O-263 728B1
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C	Original	PDF	7N60B O-220AB O-263 728B1
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	PDF	7N60K-MTQ 7N60K-MTQ 7N60KL-TA3-T QW-R205-025
7N60B Abstract: No abstract text available Text: nixYS AdvancedTechnical Information HiPerFAST IGBT V ¥ ces IXGA 7N60B IXGP 7N60B 600 V 14 A 1.5 V 150 ns ^C25 VCE sat typ % Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CGR T,J = 25°C to 150°C; RGE = 1 MD 600 V VGES Continuous	OCR Scan	PDF	7N60B 7N60B O-220AB O-263 O-220
7N60C Abstract: LI 20 AB Text: AdvancedTechnical Information HiPerFAST IGBT Lightspeed™ Series V CES IXGA 7N60C IXGP 7N60C ^C25 V CE sat typ »„ Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V VC G R T,J = 2 5 °C to 1 5 0 °C ; RrCab = 1 MU 600 V V G ES Continuous ±20 V	OCR Scan	PDF	7N60C 7N60C O-22QAB O-263 LI 20 AB

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7N60 Price and Stock

Vishay Siliconix SIHG47N60AE-GE3

STMicroelectronics STB37N60DM2AG

STMicroelectronics STO67N60M6

STMicroelectronics STP7N60M2

STMicroelectronics STW37N60DM2AG

7N60 Datasheets (15)

7N60 Datasheets Context Search

7N60C

DIODE 349

DIODE 349

7N60C

Untitled

7n60b

7N60

7n60b

Untitled

7N60B

7N60C

Untitled

7N60A

7N60C

Untitled

UTC7N60L

Untitled

7n60a

7N60P

Untitled

Untitled

Untitled

7N60B

7N60C