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    G20N120CN

    Abstract: HGTG20N120CN HGTG20N120CND LD26 G20N120
    Text: G20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original
    HGTG20N120CN HGTG20N120CN 340ns 150oC G20N120CN HGTG20N120CND LD26 G20N120 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    G20N120CN

    Abstract: HGTG20N120CN HGTG20N120CND LD26
    Text: G20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original
    HGTG20N120CN HGTG20N120CN 340ns 150oC G20N120CN HGTG20N120CND LD26 PDF

    mj122

    Abstract: G20N120CN HGTG20N120CN HGTG20N120CND LD26 g20n120
    Text: G20N120CN Data Sheet December 2001 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original
    HGTG20N120CN HGTG20N120CN 340ns 150oC mj122 G20N120CN HGTG20N120CND LD26 g20n120 PDF

    Untitled

    Abstract: No abstract text available
    Text: G20N120CN S em iconductor October 1998 Data Sheet 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    OCR Scan
    HGTG20N120CN HGTG20N120CN TA49289. 1-800-4-HARRIS PDF