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Harris Semiconductor HGTG20N120C3D HGTG20 - 45A, 1200V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTG20N120C3D		1		1	1 $8.07 10 $8.07 100 $7.59 1000 $6.86 10000 $6.86	Buy Now

G20N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G20N120CN Abstract: HGTG20N120CN HGTG20N120CND LD26 G20N120 Text: G20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	HGTG20N120CN HGTG20N120CN 340ns 150oC G20N120CN HGTG20N120CND LD26 G20N120	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
G20N120CN Abstract: HGTG20N120CN HGTG20N120CND LD26 Text: G20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	HGTG20N120CN HGTG20N120CN 340ns 150oC G20N120CN HGTG20N120CND LD26	PDF
G20N120E2 Abstract: AN7254 AN7260 HGTG20N120E2 LD26 HGTG Text: G20N120E2 S E M I C O N D U C T O R 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL	Original	HGTG20N120E2 O-247 780ns HGTG20N120E2 150oC. G20N120E2 AN7254 AN7260 LD26 HGTG	PDF
mj122 Abstract: G20N120CN HGTG20N120CN HGTG20N120CND LD26 g20n120 Text: G20N120CN Data Sheet December 2001 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	HGTG20N120CN HGTG20N120CN 340ns 150oC mj122 G20N120CN HGTG20N120CND LD26 g20n120	PDF
G20N120E2 Abstract: AN7254 AN7260 HGTG20N120E2 LD26 Text: G20N120E2 Semiconductor 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss	Original	HGTG20N120E2 O-247 780ns HGTG20N120E2 150oC. G20N120E2 AN7254 AN7260 LD26	PDF
Untitled Abstract: No abstract text available Text: G20N120CN S em iconductor October 1998 Data Sheet 63A, 1200V, NPT Series N-Channel IGBT Features The G20N120CN is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	OCR Scan	HGTG20N120CN HGTG20N120CN TA49289. 1-800-4-HARRIS	PDF