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Rochester Electronics LLC RF1S25N06SM N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF1S25N06SM	Bulk			460	1 - 10 - 100 - 1000 $0.65 10000 $0.65	Buy Now
Rochester Electronics LLC RF1S25N06SM9A N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF1S25N06SM9A	Bulk			437	1 - 10 - 100 - 1000 $0.69 10000 $0.69	Buy Now
Rochester Electronics LLC RF1S25N06SMR4643 MOSFET N-CH 60V 25A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF1S25N06SMR4643	Bulk			460	1 - 10 - 100 - 1000 $0.65 10000 $0.65	Buy Now
Harris Semiconductor RF1S25N06 25A, 60V, 0.047 OHM, N-Channel POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RF1S25N06		400		1	1 $0.39 10 $0.39 100 $0.3666 1000 $0.3315 10000 $0.3315	Buy Now
Harris Semiconductor RF1S25N06SM 25A, 60V, 0.047 OHM, N-Channel POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RF1S25N06SM		3,005		1	1 $0.6283 10 $0.6283 100 $0.5906 1000 $0.5341 10000 $0.5341	Buy Now

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F1S25N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
F1S25N06 Abstract: AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N Text: RFP25N06, F1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding	Original	PDF	RFP25N06, RF1S25N06SM TA09771. F1S25N06 AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N
F1S25N06 Abstract: AN7254 AN7260 AN9321 RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06 Text: RFP25N06, F1S25N06, F1S25N06SM S E M I C O N D U C T O R 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 25A, 60V SOURCE DRAIN GATE • rDS ON = 0.047Ω • Temperature Compensating PSPICE Model	Original	PDF	RFP25N06, RF1S25N06, RF1S25N06SM O-220AB 175oC O-262AA RF1S25N06SM 1e-30 F1S25N06 AN7254 AN7260 AN9321 RF1S25N06 RF1S25N06SM9A RFP25N06
5n06 Abstract: F1S25N06 302 s1b diode Text: RFP25N06, F1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB	Original	PDF	RFP25N06, RF1S25N06SM 5N06S O220AB O263AB 5n06 F1S25N06 302 s1b diode
F1S25N06 Abstract: RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 183E-9 Text: RFP25N06, F1S25N06, F1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs Features • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	PDF	RFP25N06, RF1S25N06, RF1S25N06SM TA09771. F1S25N06 RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 183E-9
F1S25N06 Abstract: 183E-9 302 s1b diode 585E-3 45E-9 Text: RFP25N06, F1S25N06, F1S25N06SM S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	Original	PDF	RFP25N06, RF1S25N06, RF1S25N06SM TA09771. 175oMOS 1e-30 04e-3 04e-6) 85e-3 77e-5) F1S25N06 183E-9 302 s1b diode 585E-3 45E-9
Untitled Abstract: No abstract text available Text: HAFRFRIS RFP25N06, F1S25N06, F1S25N06SM S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	OCR Scan	PDF	RFP25N06, RF1S25N06, RF1S25N06SM 55e-10 1e-30 04e-3 04e-6) 85e-3 77e-5)
Untitled Abstract: No abstract text available Text: ASSESS? RFP25N06, F1S25N06, F1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti	OCR Scan	PDF	RFP25N06, RF1S25N06, RF1S25N06SM 1e-30 04e-3 04e-6) 85e-3 77e-5) 35e-3 77e-6)
F1S25N Abstract: F1S25N06 Text: RFP25N06, F1S25N06, F1S25N06SM ffì HAFURIS S E M I C O N D U C T O R 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages J E D E C T O -2 2 0 A B • 25A, 60V • r DS ON = 0 .0 4 7 U • Temperature Compensating PSPICE Model	OCR Scan	PDF	RFP25N06, RF1S25N06, RF1S25N06SM RF1S25N06SM F1S25N F1S25N06
Untitled Abstract: No abstract text available Text: in t e r r ii RFP25N06, F1S25N06SM D a ta S h e e t 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	OCR Scan	PDF	RFP25N06, RF1S25N06SM TA09771. RFP2SN06, RF1S25N06SM AN7254 AN7260.
RFP25N06 Abstract: No abstract text available Text: RFP25N06, F1S25N06, F1S25N06SM HARRIS S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	OCR Scan	PDF	RFP25N06, RF1S25N06, RF1S25N06SM TA09771. 047i2 32e-13 72e-3 56e-3 13e-6 18e-9 RFP25N06