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    5N06 Search Results

    5N06 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP45N06VUK-E1-AY Renesas Electronics Corporation Nch Single Power MOSFET 60V 45A 9.6mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation
    NP45N06VUK-E2-AY Renesas Electronics Corporation Nch Single Power MOSFET 60V 45A 9.6mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation
    NP45N06PUK-E2-AY Renesas Electronics Corporation Nch Single Power MOSFET 60V 45A 9.6mohm MP-3ZP/TO-252 Automotive Visit Renesas Electronics Corporation
    NP45N06PUK-E1-AY Renesas Electronics Corporation Nch Single Power MOSFET 60V 45A 9.6mohm MP-3ZP/TO-252 Automotive Visit Renesas Electronics Corporation
    NP45N06VDK-E1-AY Renesas Electronics Corporation 60 V - 45 A - N-channel Power MOS FET, MP-3ZP, /Embossed Tape Visit Renesas Electronics Corporation
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    5N06 Price and Stock

    Infineon Technologies AG BSZ065N06LS5ATMA1

    MOSFET N-CH 60V 40A TSDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSZ065N06LS5ATMA1 Digi-Reel 9,307 1
    • 1 $1.89
    • 10 $1.208
    • 100 $1.89
    • 1000 $0.59208
    • 10000 $0.54654
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    BSZ065N06LS5ATMA1 Cut Tape 9,307 1
    • 1 $1.89
    • 10 $1.208
    • 100 $1.89
    • 1000 $0.59208
    • 10000 $0.54654
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    BSZ065N06LS5ATMA1 Reel 5,000 5,000
    • 1 -
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    • 100 -
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    • 10000 $0.508
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    Newark BSZ065N06LS5ATMA1 Cut Tape 607 1
    • 1 $0.927
    • 10 $0.927
    • 100 $0.613
    • 1000 $0.376
    • 10000 $0.329
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    Rochester Electronics BSZ065N06LS5ATMA1 1
    • 1 $0.5644
    • 10 $0.5644
    • 100 $0.5305
    • 1000 $0.4797
    • 10000 $0.4797
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    Chip1Stop BSZ065N06LS5ATMA1 Cut Tape 14,850
    • 1 -
    • 10 $0.792
    • 100 $0.568
    • 1000 $0.435
    • 10000 $0.394
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    Micro Commercial Components MCU95N06KY-TP

    N-CHANNEL MOSFET,DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCU95N06KY-TP Reel 2,500 2,500
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    • 10000 $0.6335
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    MCU95N06KY-TP Cut Tape 2,203 1
    • 1 $2.29
    • 10 $1.47
    • 100 $2.29
    • 1000 $0.73484
    • 10000 $0.73484
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    onsemi NTBL045N065SC1

    SILICON CARBIDE (SIC) MOSFET - 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTBL045N065SC1 Digi-Reel 1,691 1
    • 1 $11.09
    • 10 $8.022
    • 100 $11.09
    • 1000 $11.09
    • 10000 $11.09
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    NTBL045N065SC1 Cut Tape 1,691 1
    • 1 $11.09
    • 10 $8.022
    • 100 $11.09
    • 1000 $11.09
    • 10000 $11.09
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    Newark NTBL045N065SC1 Cut Tape 2,000 1
    • 1 $7.2
    • 10 $7.2
    • 100 $7.2
    • 1000 $6.97
    • 10000 $6.97
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    Richardson RFPD NTBL045N065SC1 2,000
    • 1 -
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    • 10000 $6.3
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    Avnet Silica NTBL045N065SC1 16 Weeks 2,000
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    New Advantage Corporation NTBL045N065SC1 280 1
    • 1 -
    • 10 -
    • 100 $8.09
    • 1000 $7.55
    • 10000 $7.55
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    Goford Semiconductor G075N06M

    MOSFET N-CH 60V 110A 160W TO-263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey G075N06M Reel 800 800
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    • 1000 $0.60058
    • 10000 $0.535
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    G075N06M Digi-Reel 800 1
    • 1 $1.63
    • 10 $1.106
    • 100 $1.63
    • 1000 $1.63
    • 10000 $1.63
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    Micro Commercial Components MCB145N06Y-TP

    N-CHANNEL MOSFET, D2-PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCB145N06Y-TP Digi-Reel 700 1
    • 1 $1.78
    • 10 $1.13
    • 100 $1.78
    • 1000 $1.78
    • 10000 $1.78
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    MCB145N06Y-TP Cut Tape 700 1
    • 1 $1.78
    • 10 $1.13
    • 100 $1.78
    • 1000 $1.78
    • 10000 $1.78
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    5N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5n06

    Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
    Text: 5N06LE, 5N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil


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    PDF RFD15N06LE, RFD15N06LESM 5N06L RFD15 N06LE 5n06 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3

    5n06

    Abstract: F1S25N06 302 s1b diode
    Text: 5N06, 5N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB


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    PDF RFP25N06, RF1S25N06SM 5N06S O220AB O263AB 5n06 F1S25N06 302 s1b diode

    5n06v

    Abstract: 5n06 TMOS E-FET AG3B CASE369A
    Text: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER


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    PDF 5N06V/curves 5n06v 5n06 TMOS E-FET AG3B CASE369A

    5n06

    Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06
    Text: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, SEFP5N05 5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field


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    PDF SEFP5N05 SEFP5N06 0V/60V 20Kfl) 300/is, SGSP351 100/is s-6059 C-335 5n06 5N05 DIODE c335 17611 17610 SEFP5N06

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    TP50N

    Abstract: MPT8N10
    Text: <8> MOTOROLA M C33091A High-Side TMOS Driver The MC33091A is a High-Side TMOS Driver designed for use in harsh automotive switching applications requiring the capability of handling high voltages attributed to load and field dump transients, as well as reverse and


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    PDF C33091A MC33091A MC33091A, MC33091A TP50N MPT8N10

    5N05

    Abstract: 5n06 mtp5n05
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTP5N05 5N06 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS T M O S P O W E R FETs 5 AM PERES T h e s e T M O S P o w e r FETs a re d e s ig n e d f o r h ig h s p e e d p o w e r


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    PDF MTP5N05 5N05 5n06

    LTRG

    Abstract: P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06
    Text: cu R FM 15N 05/15N 06 R FP15N 05/15N 06 HARRIS N-Channel Enhancement Mode Power Field Effect Transistors M ay 1992 Packages Features TO -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0V • rD S o n = 0 .1 4 f l SOURCE y • S O A is P o w e r -D is s ip a tio n L im ite d


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    PDF 05/15N FP15N 32e-8 0e-10 68e-8 LTRG P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06

    5N06

    Abstract: No abstract text available
    Text: 3QE D • T TS ^S B? S G S - T H O M ^ 7 # 005^07= 3 ■ ^ S O N M T P 1 5 N 0 5 L /F I ^ O g œ iltL tK g T O K Ü D g i M T P 1 5 N 0 6 L /F I s: G _s-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE MTP15N05L


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    PDF TP15N05L TP15N05LFI TP15N06L TP15N06LFI 500ms 5N06

    5N05

    Abstract: 5n06 MTP5N05 MTP5N06 MTP4N08 MTP4N10 5n0506
    Text: <8> MTP4N08, MTP5N05 MTP4N10, 5N06 MOTOROLA D e s i g n e r ’s D a t a S h e e t 4.0 and 5.0 AMPERE N-CHANNEL TMOS POWER FET N -C H A N N E L ENHANCEM ENT M ODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTO R rDS on = 0-8 OHM 80 and 100 VOLTS These TMOS Power FETs are designed for low voltage, high


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    PDF MTP4N08, MTP5N05 MTP4N10, MTP5N06 5N05 5n06 MTP5N06 MTP4N08 MTP4N10 5n0506

    5n06

    Abstract: MTD5N05-1 369A MTD5N06
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD5N05 5N06 P o w e r Field E ffe c t T ra n sisto rs N -C h ann el E n hancem ent M o d e S ilic o n G ate T M O S D P A K fo r Su rfac e M o u n t or Insertion M ount TM O S POWER FETs 5 AMPERES


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    PDF MTD5N05-1, MTD5N06-1 69A-04 MTD5N05, MTD5N06 5n06 MTD5N05-1 369A MTD5N06

    5N10E

    Abstract: 5n05e 5N06E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D
    Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Small-Signal Transistor Dice Die type Recommended bond wire diam eter' nm Die topology Page -0 .8 .-2 .0 -0 .8 .-2 .0 SISC0.5P05E SISC3.2P05E 22 22 LA LC 1183 1183 - 1 .0 .-2 .0 SISC0.5P06E 22 LA 1183


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    PDF 5P05E 2P05E 5P06E 2P10E 2P20E 4P24E 2N05E 5N05E 5N06E 5N65E 5N10E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D

    5n06

    Abstract: diode c335 5N05 SEFP5N05 SEFP5N06
    Text: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D I: I, N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ^stg Ti


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    PDF 7la-H37 SEFP5N05 SEFP5N06 0V/60V C-335 5n06 diode c335 5N05 SEFP5N06

    5n06

    Abstract: w75n06 75n06
    Text: SGS-THOMSON 75N 06/fi S T W 7 5 N 06 sth N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TH 75N 06 5N06FI S TH 75N 06 • • . ■ ■ . ■ ■ dss 60 V 60 V 60 V R DS on Id < 0 .0 1 4 ß < 0 .0 1 4 ß < 0 .0 1 4 ß 75 A 48 A 75 A T Y P IC A L RDS(on) = 0.011 Q


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    PDF 06/fi STH75N06FI O-247 O-218 5n06 w75n06 75n06