CHA2066
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Text: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
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CHA2066
10-16GHz
CHA2066
10-16GHz
20dBm
DSCHA20660118
-27-Apr-00
MS11
MS12
MS21
MS22
PS11
PS12
PS22
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CHA2066
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f
Text: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
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CHA2066
10-16GHz
CHA2066
10-16GHz
20dBm
DSCHA20661257
-14-Sept-01
MS11
MS12
MS21
MS22
PS11
PS12
PS22
993 99f
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JCA Technology low noise amplifier
Abstract: AD8354ACP-R2 02722 JCA Technology 812
Text: 1 MHz to 2.7 GHz RF Gain Block AD8354 Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dBm Input/output internally matched to 50 Ω Temperature and power supply stable Noise figure: 4.2 dB Power supply: 3 V or 5 V APPLICATIONS
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AD8354
AD8354
AD8354ACP-R2
AD8354ACP-REEL7
AD8354ACPZ-REEL7
AD8354-EVAL
C02722
JCA Technology low noise amplifier
02722
JCA Technology 812
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Untitled
Abstract: No abstract text available
Text: 1 MHz to 2.7 GHz RF Gain Block AD8353 Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 9 dBm Input/output internally matched to 50 Ω Temperature and power supply stable Noise figure: 5.3 dB Power supply: 3 V or 5 V APPLICATIONS
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AD8353
AD8353
AD8353ACP-R2
AD8353ACP-REEL7
AD8353ACPZ-REEL7
AD8353-EVAL
C02721
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CHA2069-99F/00
Abstract: CHA2069
Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA2069
18-31GHz
18-31GHz
20dBm
DSCHA20679273
8-Sep-99
CHA2069-99F/00
CHA2069
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MAR105
Abstract: CHA2066 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826
Text: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA2066
10-16GHz
CHA2066
10-16GHz
20dBm
DSCHA20660069
MAR105
MS11
MS12
MS21
MS22
PS11
PS12
PS22
RF 3826
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nf46
Abstract: CHA3666 CHA3666-SNF
Text: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via
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CHA3666-SNF
8-16GHz
CHA3666-SNF
8-16GHz
24dBm
16dBm
12L-Glass/metal
DSCHA3666-SNF7208
nf46
CHA3666
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CHT4690-99F
Abstract: CHT4690 DSCHT46905334
Text: CHT4690 RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.
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CHT4690
5-30GHz
CHT4690
5-30GHz
25dBm
DSCHT46905334
CHT4690-99F
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CHA2066
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Text: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via
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CHA2066
10-16GHz
CHA2066
10-16GHz
20dBm
DSCHA20664281
MS11
MS12
MS21
MS22
PS11
PS12
PS22
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CHT4690
Abstract: CHT4690-99F 99-F
Text: CHT4690-99F RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps
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CHT4690-99F
5-30GHz
CHT4690
5-30GHz
25dBm
DSCHT46900211
CHT4690-99F
99-F
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10ghz variable attenuator
Abstract: Fixed Attenuators Surface Mount 30dB AN0017 CHT4690-QAG RO4003 10ghz attenuator
Text: CHT4690-QAG RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4690-QAG is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a
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CHT4690-QAG
5-30GHz
CHT4690-QAG
5-30GHz
25dBm
16Leads
CHT4690QAG0211
10ghz variable attenuator
Fixed Attenuators Surface Mount 30dB
AN0017
RO4003
10ghz attenuator
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Untitled
Abstract: No abstract text available
Text: CHA3666-FAA 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAA is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA3666-FAA
6-16GHz
V/80mA.
A3666
6-16GHz
DSCHA3666-FAA2356
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Untitled
Abstract: No abstract text available
Text: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA3666
6-17GHz
CHA3666
6-17GHz
26dBm
17dBm
DSCHA3666-8108
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Untitled
Abstract: No abstract text available
Text: CHA1014 RoHS COMPLIANT 7-14GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1014 is a monolithic two-stage wide band low noise amplifier designed for a wide range of applications. The circuit is manufactured with a standard pHEMT process 0.25µm gate length, via
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CHA1014
7-14GHz
CHA1014
14GHz
10dBm
DSCHA10140112
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Untitled
Abstract: No abstract text available
Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA2190
20-30GHz
20-30GHz
20dBm
dBS11
dBS21
dBS22
DSCHA21902036
-05-Feb
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Untitled
Abstract: No abstract text available
Text: CHA2394 RoHS COMPLIANT 36-40GHz Very Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description Vds Vds The CHA2394 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.
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CHA2394
36-40GHz
CHA2394
DSCHA23946354
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CHA2194
Abstract: No abstract text available
Text: CHA2194 36-44GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 38 GHz to 44 GHz point to point and point to multipoints communication . The circuit is manufactured with a standard
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CHA2194
36-44GHz
36-44GHz
20dBm
dBS21
dBS11
dBS22
CHA2194
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variable attenuator at 15GHz with input power 12dBm
Abstract: CHT4690 7135 35v
Text: CHT4690 RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC
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CHT4690
5-30GHz
CHT4690
5-30GHz
25dBm
DSCHT46908268
variable attenuator at 15GHz with input power 12dBm
7135 35v
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CHA2194
Abstract: VG-12
Text: CHA2194 RoHS COMPLIANT 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .
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CHA2194
36-44GHz
36GHz
44GHz
36-44GHz
20dBm
DSCHA21942035
-04-Feb
CHA2194
VG-12
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CHA8100
Abstract: x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105
Text: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power
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CHA8100
CHA8100
DSCHA81000069
x-Band High Power Amplifier
AN0020
CHA8100-99F
41dBm
vcx8
mar105
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CHT4690-QAG
Abstract: variable attenuator at 15GHz AN0017 RO4003 16L-QFN
Text: CHT4690-QAG RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4690-QAG is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a MESFET
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CHT4690-QAG
5-30GHz
CHT4690-QAG
5-30GHz
25dBm
16Leads
CHT4690QAG6332
variable attenuator at 15GHz
AN0017
RO4003
16L-QFN
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4093 bd
Abstract: AN0017 CHA2066-QAG MO-220 PS11 PS12 PS22 RO4003 PCB Rogers RO4003 7649 qfn
Text: CHA2066-QAG RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multi-point, VSAT to
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CHA2066-QAG
10-16GHz
CHA2066-QAG
10-16GHz
DSCHA2066QAG6332
4093 bd
AN0017
MO-220
PS11
PS12
PS22
RO4003
PCB Rogers RO4003
7649 qfn
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CHA2391
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Text: CHA2391 RoHS COMPLIANT 36-40GHz Very Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2391 is a two-stage wide band monolithic low noise amplifier. 25 50 IN The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA2391
36-40GHz
CHA2391
36-40GHz
20dBm
DSCHA23912240
-28-Aug
MS11
MS12
MS21
MS22
PS11
PS12
PS22
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CHA2395
Abstract: No abstract text available
Text: CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.
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CHA2395
36-40GHz
CHA2395
DSCHA23952240
-28-Aug
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