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    CHA2069-99F/00

    Abstract: CHA2069
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99 CHA2069-99F/00 CHA2069

    CHA2069-99F/00

    Abstract: CHA2069
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via


    Original     		PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99 CHA2069-99F/00 CHA2069

    Untitled

    Abstract: No abstract text available
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99