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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via	Original	PDF	CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb
CHA2190 Abstract: PS11 PS12 PS22 DBS11 Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via	Original	PDF	CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb CHA2190 PS11 PS12 PS22 DBS11
CHA2190-99F/00 Abstract: CHA2190 PS11 PS12 PS22 self 16071 Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes	Original	PDF	CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb CHA2190-99F/00 CHA2190 PS11 PS12 PS22 self 16071
internal circuit of ic 7486 Abstract: CHA2190-99F/00 hemt biasing CHA2190 PS11 PS12 PS22 Text: CHA2190 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via	Original	PDF	CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb internal circuit of ic 7486 CHA2190-99F/00 hemt biasing CHA2190 PS11 PS12 PS22