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    CT4 VISHAY Search Results

    CT4 VISHAY Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    ISL28617VY100EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY10EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY25EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation

    CT4 VISHAY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c7343 CAPACITOR

    Abstract: Venkel CR0603 10W tsw-107-14-g-d-006 ESR C114 transistor connector SFM140L2SDLC SOT23-132 C7343 SFM140L2SDLC 9 pin RS232 to 4pin RJ11 cr0603 VENKEL
    Text: TMS320VC5402 DSK BOM Item # 1 2 3 4 5 Qty 6 6 1 3 3 Ref Des CT6,CT7,CT9,CT13,CT14,CT20 CT1,CT2,CT3,CT4,CT8,CT11 CT5 CT10,CT15,CT17 CT16,CT18,CT19 Description Capacitor, 10uF, 10V, 20%, Tantalum, 6032 Capacitor, 1uF 25v low esr Capacitor, 330uF, ( 6.3V LOW ESR)


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    TMS320VC5402 330uF, 150-mohm 300-mohm C6032 C1206 C7343 c7343 CAPACITOR Venkel CR0603 10W tsw-107-14-g-d-006 ESR C114 transistor connector SFM140L2SDLC SOT23-132 C7343 SFM140L2SDLC 9 pin RS232 to 4pin RJ11 cr0603 VENKEL PDF

    15514

    Abstract: No abstract text available
    Text: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SiB410DK AN609, 8029u 6830m 5384m 0019m 0110u 9058u 5505u 15514 PDF

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    Abstract: No abstract text available
    Text: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si4202DY AN609, 2175m 2923m 2439m 3089u 1542m 7069m 8017m PDF

    14093

    Abstract: 75431
    Text: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si9945BDY AN609, 3203u 3659m 8029m 3567u 2443m 3998m 0795m 14093 75431 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA450DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SiA450DJ AN609, 9999u 0841m 9107m 5440m 1720u 3046u 4369m PDF

    77503

    Abstract: No abstract text available
    Text: Si5999EDU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si5999EDU AN609, 7690u 1847m 5265m 5610m 1835m 0133m 6339u 77503 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR826DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SiR826DP AN609, 6931m 8259m 0206m 8462m 3297m 8700m 1449m PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4004DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si4004DY AN609, 7091m 5039m 6331m 9944m 5460m 2019m 0747m PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA915DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SiA915DJ AN609, 1970u 0902m 7854m 9117u 4934u 4698u 4306u PDF

    si1427

    Abstract: No abstract text available
    Text: Si1427EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si1427EDH AN609, 3515u 1736m 9349m 1636u 2141m 9215u 1951m si1427 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ4946AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SQ4946AEY AN609, 7463m 1668u 8534m 0272m 1833m 0708m 2266m 16-Aug-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ3460EV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SQ3460EV AN609, 5052u 3918u 0623m 6358m 7809m 7880m 4197m 03-Jan-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ4920EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SQ4920EY AN609, 0927u 7168u 4412m 6930m 2303m 7951m 18-Jun-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS401EN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SQS401EN AN609, 1489m 4071m 1160m 9939m 0246m 4666u 5277m 2426m PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    IRFZ44S IRFZ44L SiHFZ44S SiHFZ44LL AN609, THERMAZ44S 9021m 9076m 0860m PDF

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    Abstract: No abstract text available
    Text: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    IRFP21N60L SiHFP21N60L AN609, 07-Jun-10 PDF

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    Abstract: No abstract text available
    Text: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    IRFIBC40G SiHFIBC40G AN609, 31-May-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRFD014 SiHFD014 AN609, CONFIGURA5-Oct-10 3009m 0416u 6348m 9120m PDF

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    Abstract: No abstract text available
    Text: IRLR024_RC, IRLU024_RC, SiHLR024_RC, SiHLU024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    IRLR024 IRLU024 SiHLR024 SiHLU024 AN609, 9731m 2316m 0467m PDF

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    Abstract: No abstract text available
    Text: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRFZ48R SiHFZ48R AN609, 6055m 9011m 2958m 1718m 3035m PDF

    TSS 6672-1

    Abstract: No abstract text available
    Text: Si2319CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    Si2319CDS AN609, 26-May-10 TSS 6672-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHFZ34S_RC, SiHFZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    SiHFZ34S SiHFZ34L AN609, 4962m 9514m 4372m 1122m 6484m PDF

    90388

    Abstract: No abstract text available
    Text: IRFIB7N50A_RC, SiHFIB7N50A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    IRFIB7N50A SiHFIB7N50A AN609, 21-May-10 90388 PDF

    74366

    Abstract: AN609 CT4 vishay SiHLD024
    Text: IRLD024_RC, SiHLD024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRLD024 SiHLD024 AN609, CONFIGURA-Oct-10 0426m 8968m 4501m 6212m 74366 AN609 CT4 vishay PDF