Untitled
Abstract: No abstract text available
Text: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFD014
SiHFD014
AN609,
CONFIGURA5-Oct-10
3009m
0416u
6348m
9120m
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Untitled
Abstract: No abstract text available
Text: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature
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IRFD014,
SiHFD014
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature
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IRFD014,
SiHFD014
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature
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IRFD014,
SiHFD014
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFD014
Abstract: No abstract text available
Text: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature
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IRFD014,
SiHFD014
2002/95/EC
18-Jul-08
IRFD014
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IRFD014
Abstract: No abstract text available
Text: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature
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IRFD014,
SiHFD014
2002/95/EC
11-Mar-11
IRFD014
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Untitled
Abstract: No abstract text available
Text: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature
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IRFD014,
SiHFD014
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRFD014
Abstract: S10 diode VISHAY MARKING S10 vishay body marking IRFD014
Text: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature
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IRFD014,
SiHFD014
2002/95/EC
11-Mar-11
IRFD014
S10 diode
VISHAY MARKING S10
vishay body marking IRFD014
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IRFD014
Abstract: No abstract text available
Text: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature
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IRFD014,
SiHFD014
18-Jul-08
IRFD014
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Untitled
Abstract: No abstract text available
Text: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature
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Original
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PDF
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IRFD014,
SiHFD014
2002/95/EC
18-Jul-08
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