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    SQ3460EV Search Results

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    SQ3460EV Price and Stock

    Vishay Siliconix SQ3460EV-T1_GE3

    MOSFET N-CH 20V 8A 6TSOP
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    DigiKey SQ3460EV-T1_GE3 Digi-Reel 1,053 1
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    SQ3460EV-T1_GE3 Cut Tape 1,053 1
    • 1 $1.55
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    SQ3460EV-T1_GE3 Reel 3,000
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    Vishay Intertechnologies SQ3460EV-T1_GE3

    Trans MOSFET N-CH 20V 8A 6-Pin TSOP T/R - Tape and Reel (Alt: SQ3460EV-T1-GE3)
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    Avnet Americas SQ3460EV-T1_GE3 Reel 3,000
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    SQ3460EV-T1_GE3 Reel 15 Weeks 3,000
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    Mouser Electronics SQ3460EV-T1_GE3 3,044
    • 1 $1.27
    • 10 $0.848
    • 100 $0.574
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    Newark SQ3460EV-T1_GE3 Cut Tape 970 1
    • 1 $1.04
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    SQ3460EV-T1_GE3 Reel 3,000
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    Vishay Intertechnologies SQ3460EV-T1-GE3

    MOSFETs RECOMMENDED ALT SQ34
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    TTI SQ3460EV-T1-GE3 Reel 9,000 3,000
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    SQ3460EV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQ3460EV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 6TSOP Original PDF
    SQ3460EV-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 8A 6TSOP Original PDF

    SQ3460EV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC


    Original     		SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ3460EV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SQ3460EV AN609, 5052u 3918u 0623m 6358m 7809m 7880m 4197m 03-Jan-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC


    Original     		SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ3460EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.026 RDS(on) () at VGS = 2.5 V 0.032 RDS(on) () at VGS = 1.8 V 0.036 ID (A) 8 Configuration Single TSOP-6 Top V iew


    Original     		SQ3460EV 2002/95/EC AEC-Q101 SQ3460EV-T1-GE3 18-Jul-08 PDF

    TSOP 48 thermal resistance junction to case

    Abstract: No abstract text available
    Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC


    Original     		SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP 48 thermal resistance junction to case PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQ3460EV www.vishay.com Vishay Siliconix SPICE Device Model SQ3460EV DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SQ3460EV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC


    Original     		SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    67037

    Abstract: No abstract text available
    Text: SQ3460EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration Single TSOP-6 Top V iew


    Original     		SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 18-Jul-08 67037 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC


    Original     		SQ3460EV AEC-Q101 2002/95/EC SQ3460EV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    DPAK/TO-252

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the


    Original     		Ups-2726 VMN-PL0469-1311 DPAK/TO-252 PDF

    SQJ469ep

    Abstract: SQ4483BE
    Text: Vishay Intertechnology, Inc. AEC-Q101 QUALIFIED SQ RUGGED SERIES MOSFET s ThunderFET ≥ 100 V, Low On-Resistance and Low FOM OPTIMIZED PowerPAK® SO-8L Optimum High and Low Side Combination in a 5 mm x 6 mm Package for Synchronous Buck PowerPAK SO-8L 1/2 the Size of


    Original     		AEC-Q101 AEC-Q101 TS-16949 VMN-MS6925-1406 SQJ469ep SQ4483BE PDF

    sq4435

    Abstract: SQP120N10-09
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.


    Original     		VMN-PL0469-1505 sq4435 SQP120N10-09 PDF

    SQ2315ES

    Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects


    Original     		AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10 PDF

    VMN-SG2151-1406

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param


    Original     		AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 PDF

    SQ3427

    Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
    Text: V i s h ay I n terte c h n olo g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ • Application notes: http://www.vishay.com/mosfets/automotive-mosfets/


    Original     		AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 PDF