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    BHARAT Search Results

    BHARAT Datasheets (172)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2221 Bharat Electronics Transistor Selection Guide Scan PDF
    2N2221A Bharat Electronics Transistor Selection Guide Scan PDF
    2N2222 Bharat Electronics Transistor Selection Guide Scan PDF
    2N2222A Bharat Electronics Transistor Selection Guide Scan PDF
    2N2368 Bharat Electronics Transistor Selection Guide Scan PDF
    2N2369 Bharat Electronics Transistor Selection Guide Scan PDF
    2N2369A Bharat Electronics Transistor Selection Guide Scan PDF
    2N2904 Bharat Electronics Transistor Selection Guide Scan PDF
    2N2904A Bharat Electronics Transistor Selection Guide Scan PDF
    2N2906 Bharat Electronics Transistor Selection Guide Scan PDF
    2N3375 Bharat Electronics UHF / VHF RF Transistors Scan PDF
    2N3500 Bharat Electronics Transistor Selection Guide Scan PDF
    2N3501 Bharat Electronics Transistor Selection Guide Scan PDF
    2N3501TV Bharat Electronics Transistor Selection Guide Scan PDF
    2N3866 Bharat Electronics UHF / VHF RF Transistors Scan PDF
    2N5109 Bharat Electronics UHF / VHF RF Transistors Scan PDF
    2N5916 Bharat Electronics UHF / VHF RF Transistors Scan PDF
    2N5918 Bharat Electronics UHF / VHF RF Transistors Scan PDF
    2N6119 Bharat Electronics UHF / VHF RF Transistors Scan PDF
    2N6198 Bharat Electronics UHF / VHF RF Transistors Scan PDF
    ...

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    Maxwell

    Abstract: IPC-SM-782 avx CAPA
    Text: TECHNICAL INFORMATION PARAMETERS IMPORTANT FOR SURFACE MOUNT APPLICATIONS OF MULTILAYER CERAMIC CAPACITORS by Bharat S. Rawal Kumar Krishnamani John Maxwell AVX Corporation P.O. Box 867 Myrtle Beach, SC 29577 Abstract: With increasing use of multilayer ceramic


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    PDF 5M993-R Maxwell IPC-SM-782 avx CAPA

    kyocera bismuth titanate

    Abstract: composite elastic modulus Fracture Behavior of Ceramics Used in Multilayer crc avx
    Text: TECHNICAL INFORMATION FACTORS RESPONSIBLE FOR THERMAL SHOCK BEHAVIOR OF CHIP CAPACITORS By Bharat S. Rawal, Richard Ladew and Ricardo Garcia Abstract: Thermal shock behavior of multilayer ceramic chip capacitors was evaluated for different ceramic dielectrics with varying construction and design


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    PDF S-FRTSB00M0900-C kyocera bismuth titanate composite elastic modulus Fracture Behavior of Ceramics Used in Multilayer crc avx

    X7R mid voltage dependence

    Abstract: BHARAT capacitors coefficient of thermal expansion
    Text: TECHNICAL INFORMATION RELIABILITY OF MULTILAYER CERAMIC CAPACITORS AFTER THERMAL SHOCK by Bharat S. Rawal Michael Childs Allan Cooper Bill McLaughlin Corporate Research Laboratory AVX Corporation 17th Avenue South P.O. Box 867 Myrtle Beach, SC 29577 Abstract:


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    PDF S-RMTS00M301-R X7R mid voltage dependence BHARAT capacitors coefficient of thermal expansion

    Fracture Behavior of Ceramics Used in Multilayer

    Abstract: crc avx Film Microelectronics
    Text: TECHNICAL INFORMATION FACTORS RESPONSIBLE FOR THERMAL SHOCK BEHAVIOR OF CHIP CAPACITORS By Bharat S. Rawal, Richard Ladew and Ricardo Garcia Abstract: Thermal shock behavior of multilayer ceramic chip capacitors was evaluated for different ceramic dielectrics with varying construction and design


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    PDF S-FRTSB00M0900-C Fracture Behavior of Ceramics Used in Multilayer crc avx Film Microelectronics

    Revalpha

    Abstract: Nitto* revalpha Nitto Denko Revalpha Revalpha NO.3195H etch uv tape and furukawa magnetron X-band microwave oven magnetron Mitsui chemicals X-band antenna
    Text: Benefits and Challenges in Decreasing GaAs Through Substrate Via Size and Die Thickness Henry Hendriks, Allen Hanson, Thomas Lepkowski, Anthony Quaglietta, and Bharat Patel M/A-COM : Tyco Electronics, 100 Chelmsford Street, Lowell, MA 01851 USA Phone: 978 656-2562, Fax: (978) 656-2900, Email: [email protected]


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    103 K1C capacitor

    Abstract: glass frit electronics 213M 337M BHARAT cte table for epoxy adhesive and substrate FR4 epoxy dielectric constant 4.4 ipc-SM-782 MANUFACTURING CONSIDERATIONS Process 5.2.1 Land TAJC476
    Text: TECHNICAL INFORMATION PARAMETERS IMPORTANT FOR SURFACE MOUNT APPLICATIONS OF MULTILAYER CERAMIC CAPACITORS by Bharat S. Rawal Kumar Krishnamani John Maxwell AVX Corporation P.O. Box 867 Myrtle Beach, SC 29577 Abstract: With increasing use of multilayer ceramic


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    PDF 1285mA 1658mA 1817mA 141mA 131mA 183mA 103 K1C capacitor glass frit electronics 213M 337M BHARAT cte table for epoxy adhesive and substrate FR4 epoxy dielectric constant 4.4 ipc-SM-782 MANUFACTURING CONSIDERATIONS Process 5.2.1 Land TAJC476

    ICCAD-94

    Abstract: bit-slice Signal Path Designer
    Text: Circuit Design Environment and Layout Planning Bharat Krishna, NIKE-SC/Design Technology, Intel Corp. Gil Kleinfeld, NIKE-HF/Design Technology, Intel Corp. Index words: circuit design, layout planning Abstract Circuit design in deep sub-micron technologies requires


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    Z5U diode

    Abstract: BHARAT laser lens conductivity meter circuit phase latter
    Text: TECHNICAL INFORMATION YOUNG’S MODULUS AND THERMAL DIFFUSIVITY MEASUREMENTS OF BARIUM TITANATE BASED DIELECTRIC CERAMICS G. S. White and C. Nguyen National Bureau of Standards Gaithersburg, MD 20899 Bharat Rawal AVX Corporation Myrtle Beach, SC 29577 Abstract:


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    PDF 5M394-R Z5U diode BHARAT laser lens conductivity meter circuit phase latter

    laser lens

    Abstract: BHARAT BHARAT ELECTRONICS schematic ultrasonic distance meter capacitors coefficient of thermal expansion transit time ultrasonic flow meter
    Text: TECHNICAL INFORMATION YOUNG’S MODULUS AND THERMAL DIFFUSIVITY MEASUREMENTS OF BARIUM TITANATE BASED DIELECTRIC CERAMICS G. S. White and C. Nguyen National Bureau of Standards Gaithersburg, MD 20899 Bharat Rawal AVX Corporation Myrtle Beach, SC 29577 Abstract:


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    PDF S-YTMB00M900-R laser lens BHARAT BHARAT ELECTRONICS schematic ultrasonic distance meter capacitors coefficient of thermal expansion transit time ultrasonic flow meter

    bit-slice

    Abstract: No abstract text available
    Text: Challenges of CAD Development for Datapath Design Tim Chan, Design Technology, Intel Corp. Amit Chowdhary, Design Technology, Intel Corp. Bharat Krishna, Design Technology, Intel Corp. Artour Levin, Design Technology, Intel Corp. Gary Meeker, Design Technology, Intel Corp.


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    AVX film chip capacitors

    Abstract: conductivity meter circuit MANUFACTURING CONSIDERATIONS Process 5.2.1 Land material composition of chip capacitors PH 593 profile wave soldering IPC-SM-782 1819E PEAK 1819E CRACK PROPAGATION PATTERNS
    Text: TECHNICAL INFORMATION PARAMETERS IMPORTANT FOR SURFACE MOUNT APPLICATIONS OF MULTILAYER CERAMIC CAPACITORS by Bharat S. Rawal Kumar Krishnamani John Maxwell AVX Corporation P.O. Box 867 Myrtle Beach, SC 29577 Abstract: With increasing use of multilayer ceramic


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    PDF 5M993-R AVX film chip capacitors conductivity meter circuit MANUFACTURING CONSIDERATIONS Process 5.2.1 Land material composition of chip capacitors PH 593 profile wave soldering IPC-SM-782 1819E PEAK 1819E CRACK PROPAGATION PATTERNS

    BestCap®: A New Generation of Pulse Double Layer Capacitors

    Abstract: BestCap® bestcap milli farad capacitor 470 micro farad capacitor capacitor 470 micro farads low cap esr measure capacitor 220 micro farad 16 volts RELIABILITY DATA supercapacitor proportional control oven
    Text: TECHNICAL INFORMATION BESTCAP : A NEW GENERATION OF PULSE DOUBLE LAYER CAPACITORS by Bharat Rawal and Lee Shinaberger Advanced Products and Technology Center AVX Corporation Myrtle Beach, SC 29577 Abstract: BestCap®, a new generation of Double Layer Capacitors


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    PDF CAPACIT88-9880 S-BC1M804-N BestCap®: A New Generation of Pulse Double Layer Capacitors BestCap® bestcap milli farad capacitor 470 micro farad capacitor capacitor 470 micro farads low cap esr measure capacitor 220 micro farad 16 volts RELIABILITY DATA supercapacitor proportional control oven

    BY127

    Abstract: BHARAT ELECTRONICS CD3922 BEL BY127 CD3403 SOD-18 CM10-12A BHARAT BAL0001-100 BAL0004-100
    Text: BHARAT E L E K / SE I I I C O N D DI 4?E □□Gonn D ms • b e li T" 33-¿/ New devices under design Type Polarity C3-12 CM10-12A CM50-12A D1-28 D1-28Z D3-28 010-28 Frequency Vcc P out V <W) (W) 12.5 12.5 12.5 28 28 28 28 4 10 50 1 2 , 12.5 0.2 0.2 0.6


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    PDF C3-12 CM10-12A CM50-12A D1-28 D1-28Z D3-28 345382-Extn BY127 BHARAT ELECTRONICS CD3922 BEL BY127 CD3403 SOD-18 BHARAT BAL0001-100 BAL0004-100

    BEL 100N TRANSISTOR

    Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
    Text: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ


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    PDF 143S3Tfl 2N2218 285max 2N2219A 2N3501TV 20min. 22min. 2N918 2N929 BEL 100N TRANSISTOR BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115

    59VIII

    Abstract: 79VIII BCY 62 59IX BCY 68 79-IX BCY57 BCY58VII BCY58VIII T018
    Text: BHARAT ELEK/SEfllCOND DI 47E D • 14353^0 □□□□013 72? ■ B E L l T '"Zf'OÍ VCE Si Device No VCEO VCBO Volts mm Volts mm V ebo Vofts mm hFE at bias min /max Ic mA VCE Volts 1CM mA max Ptol mW max ICBO <A typ (Sat Volts typ fT MHz typ Cob pF typ


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    PDF BCY57 BCY58VII BCY58VIII 59VIII 100min. 78VII 78VIII 79VII 79VIII BFW10 59VIII 79VIII BCY 62 59IX BCY 68 79-IX BCY58VIII T018

    GR 1815

    Abstract: 2SA950Y 1815gr 2SC1815Y 2SC2229Y 2SC2229-Y 2SA10150 1959Y 2SA562Y BF594
    Text: BHARAT ELEK/ SEPII COND DI M7E B • m 3 S 3 ciö O O OO Dl l T54 ■ BEL I jz*2 7 - ò ] VCE Si VCEO D e v ic e No VCBO V ebo V o lts V o lts V o lts min mm mm hFE le at bias min /m ax mA VCE 1 CM V o lts mA m ax P lo t mW max IC B O typ Sat V o lts ÍT


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    PDF BF594 BF596 27min. BF597 37min. 2SC1815Y BC178B GR 1815 2SA950Y 1815gr 2SC2229Y 2SC2229-Y 2SA10150 1959Y 2SA562Y

    HMC1001

    Abstract: HMC1002 an205 honeywell AN-201 AN-205 magnetic sensor an-201 Anisotropic magnetoresistance magnetic sensor hmc1001 honeywell hmc1002 honeywell
    Text: Honeywell Magnetic Sensor Cross-Axis Effect AN-205 Bharat B. Pant, Ph.D., Physics Mike Caruso, Sensor Applications Engineer M agnetic sensors are generally sensitive to an applied magnetic field in a single direction, or axis. These sensors can also exhibit a change in sensitivity based on the applied field in the transverse, or cross­


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    PDF AN-205 HMC1001 HMC1002 an205 honeywell AN-201 magnetic sensor an-201 Anisotropic magnetoresistance magnetic sensor hmc1001 honeywell hmc1002 honeywell

    TIP 41A NPN

    Abstract: BEL3055 BEL2073 BEL407 TIP NPN tip 1050 BEL149 BEL406 BEL2233 BEL536
    Text: BHARAT E L E K / S ENICOND PI M7E D • 3,4353^5 00DDD15 5TT ■ BELI POWER DEVICES Bharat Electronics Power Devices are enjoying a wide acceptance in consumer industrial and defence electronics applications. As a guide for selection of devices, this catalogue summarises the maximum ratings and electrical characteristics


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    PDF Q00Q015 O-220 BEL536 TIP 41A NPN BEL3055 BEL2073 BEL407 TIP NPN tip 1050 BEL149 BEL406 BEL2233

    TRANSISTOR 237b

    Abstract: TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B
    Text: BHARAT ELEK/SE niC OND DI 4?E D • 143S3TÛ □□□□OCH 2Tb ■ VCE Si Device No 37. 38. 39. 40. 41. BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 V h FE VCEO VCBO Volts min Volts mm Volts min at bias mtn /max 45 25 25 25 25 50 30 30 30 30 5 5 5 5 5


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    PDF 143S3TÃ TRANSISTOR 237b TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B

    C25-28

    Abstract: 2N3375 2N3866 2N5916 2N5918 CD2035 CD2337 CD2505 b25-28 BHARAT elek
    Text: m BHARAT ELEK/SEHICOND DI 4?E D OOOOCiia BQI • BELI T ’' 3 3 " I RF DEVICES contd. UHF-225 - 400 MHz 2N3866 2N3375 CD2087/C3-28/ 2N5916 CD2035 CD2505 CD2088/CM10-28/ 2N5918 CD 2089 CD2337 C25-28 CM25-28 CM45-28* C2M-70-28R/ CD4526 C2M60-28/ 2N6439 C2M-100-28*


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    PDF UHF-225 2N3866 2N3375 T0-60 CD2087/C3-28/ 2N5916 CD2035 CD2505 CD2088/CM10-28/ 2N5918 C25-28 2N5916 CD2337 b25-28 BHARAT elek

    BM100-28

    Abstract: C2528 C25-28 BHARAT elek CD4526 2N6198 BHARAT C2M70-28R CD2035 CM10-28
    Text: BHARAT E L E K / S E H I C O N D m DI 4?E D OOOaDlfl BQI • BELI T ’' 3 3 " / RF DEVICES contd. UHF-225 - 400 MHz 2N3866 2N3375 CD2087/C3-28/ 2N5916 CD2035 CD2505 CD2088/CM10-28/ 2N5918 CD 2089 CD2337 C25-28 CM25-28 CM45-28* C2M-70-28R/ CD4526 C2M60-28/


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    PDF 2N3866 2N3375 T0-60 CD2087/C3-28/ 2N5916 CD2035 CD2505 CD2088/CM10-28/ 2N5918 CD2337 BM100-28 C2528 C25-28 BHARAT elek CD4526 2N6198 BHARAT C2M70-28R CD2035 CM10-28

    BHARAT ELECTRONICS

    Abstract: BEL BY127 BHARAT CD3922 CM50-12A BAL0001-100 by125 BY126 CD3403 BAL0004-100
    Text: BHARAT ELEK/SEI1IC0ND »I M7E D ^ » u j^ w .,u m u ! ^ M A i ^ w w y . w M . iu w .• i E ■ « 1 1435310 DDOanil 14S ■ BELI T ' 3 3-¿/ 1y Iii i New devices under design Type Polarity C3-12 CM10-12A CM50-12A D1-28 D1-28Z D3-28 D10-28 Frequency Vcc P out


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    PDF C3-12 CM10-12A CM50-12A D1-28 D1-28Z D3-28 D10-28 BA157 345382-Extn BHARAT ELECTRONICS BEL BY127 BHARAT CD3922 BAL0001-100 by125 BY126 CD3403 BAL0004-100

    bel187

    Abstract: bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904
    Text: BHARAT ELEK/SEHICOND DI 47E D • 1 4 3 5 3 ‘iä G O G G Q 1 G Tifi ■ B E LI I VCE Si Device No VCEO Volts min VCBO Volts mm V eb o Volts min hFE at b<as mm /max. Ic mA VCE Volts 1CM mA max P lo t mW ICBO nA max typ S a t V otts typ Cob ts p l- ns typ


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    PDF 27min. 37min. 35friin. 50min 50min. 40min 40min. bel187 bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904

    transistors BC 23

    Abstract: BF494A transistors BC 557b BF494B BHARAT elek 547B 548B 549B BC547A BF494
    Text: BHARAT ELEK/SENICOND DI 47E J> 14353^0 □□□□OOfl 3bT BELI SILICON SMALL SIGNAL DEVICE i r - 3 l- 0 f SILICON SMALL SIGNAL DEVICES QUICK REFERENCE CHART PLASTIC PACKAGES NPNIF/RF TRANSISTORS VCE Si Device No 1. 2. 3. 4. 5. 6. BF 494 BF494A BF494B BF 495


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    PDF r-31-0' BF494 BF494A BF494B BF495C BF495D transistors BC 23 transistors BC 557b BHARAT elek 547B 548B 549B BC547A