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Catalog Datasheet	MFG & Type	Document Tags	PDF
MOSFET Abstract: No abstract text available Text: ACE2301B P-Channel Enhancement Mode MOSFET Description ACE2301B is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are	Original	ACE2301B ACE2301B 100mR 120mR MOSFET	PDF

Catalog Datasheet

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MOSFET

Abstract: No abstract text available
Text: ACE2301B P-Channel Enhancement Mode MOSFET Description ACE2301B is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are

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ACE2301B ACE2301B 100mR 120mR MOSFET

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