A1012
Abstract: Siemens S35 BUZ83A C67078-A1012-A3
Text: aûD » • aa35bQ5 o o m a io 88D 14810 D « sieù 7 “ ' 3 i? V / . B UZ 8 3 A SIEMENS AKTIENfiESELLSCHAF-Main ratings N-Channel Draln-source voltage Voa Continuous drain current Io Draln-source on-reslstance ^DS on 800 V 3,4 A 3,0 n
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BUZ83A
C67078-A1012-A3
flS35b05
A1012
Siemens S35
C67078-A1012-A3
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Untitled
Abstract: No abstract text available
Text: aûD » • aa35bQ5 o o m a i o 88 D 14810 « sieù D . BUZ83A SIEMENS AKTIENfiESELLSCHAF-Main ratings N-Channel Draln-source voltage Vos Continuous drain current Io Draln-source on-reslstance ^DS on 800 V 3,4 A 3,0 n Description SIPMOS, N-channel, enhancement mode
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aa35bQ5
BUZ83A
C67078-A1012-A3
a53Sb0S
1487s
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SAB 82258
Abstract: sab82257
Text: 4 7E D Device Specifications • fiSBSbGS SIEI1ENS DD330S1 1 « S IE G AKTI ENGESELLSCHAF Preliminary T - « 3 - 3 3 - l et SAB 82257 High-Performance DMA Controller for 16-Bit Microcomputer Systems SAB 82257 SAB 82257-6 8 MHz 6 MHz • • • • 16 Mbytes addressing range
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DD330S1
16-Bit
SAB82257
fl235b05
003310b
82257-N
Q67120-P176
82257-6-N
SAB 82258
sab82257
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KDS 7c
Abstract: A3116 DIODE S45 C67078-A3116-A2 156* diode
Text: flêD D SIEMENS • fl23Sb05 0Q1SQ0& h M S I E G AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^DS on = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode
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fl23Sb05
C67078-A3116-A2
fl23St
QQ15012
fl23SbOS
KDS 7c
A3116
DIODE S45
C67078-A3116-A2
156* diode
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d880
Abstract: No abstract text available
Text: flêD D • fl2 3 S b 0 5 0Q1SQ0& h M S I E G SIEMENS AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^D S o n = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode
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C67078-A3116-A2
d880
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BC 247 b transistor
Abstract: C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b
Text: - 25C D • Ô235b05 O O O m ^ b □ H S I E 6 - Q PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 ' SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in
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235b05
BC556'
BC556VI
BC556A
BC556B
BC5571
BC557VI
BC557A
BC557B
BC5581
BC 247 b transistor
C558B
transistor BC 247
transistor BC 245
bc 558 equivalent
bc560
bc556b equivalent
BC 247
Transistor - BC 547, CL 100
transistor 557 b
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