siemens relay dc 12v
Abstract: pin diagram of bts 149 Siemens Smart Power IC Siemens temperature sensor t47 Q67060-S6503-A3 siemens relay 131E Q67060-S6503-A2 bts149
Text: fl235 b05 OOälBOä bñT SIEM ENS HITFET BTS 149 Smart Lowside Power Switch Features Product Summary • • • • • • • • • Continious drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input
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Q67060-S6503-A2
T0220
E3045A
Q67060-S6503-A3
siemens relay dc 12v
pin diagram of bts 149
Siemens Smart Power IC
Siemens temperature sensor t47
Q67060-S6503-A3
siemens relay
131E
Q67060-S6503-A2
bts149
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Untitled
Abstract: No abstract text available
Text: SIEMENS Mini Smart BSP 550 Preliminary Data • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load Clamp of negative output voltage with inductive loads
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Q67000-S311
OT-223
0077bflD
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cn/A/U 237 BG
Abstract: No abstract text available
Text: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Fast 32-bit division, 16-bit 2 multiplication,
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80C517/80C537
80C517
80C537
32-bit
16-bit
80C515
cn/A/U 237 BG
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322120S-70
Abstract: HYB514400
Text: SIEMENS 2 M X 32-Bit Dynamic RAM Module HYM 322120S-60/-70/-80 Advanced Information • 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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32-Bit
322120S-60/-70/-80
16-Bit)
fl235bGS
322120S-70
HYB514400
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smd transistor 41B
Abstract: transistor c160 smd marking KD TRANSISTOR SMD MARKING CODE kd TRANSISTOR SMD MARKING CODE XI siemens microcontroller s47 IC smd marking code smd transistor marking HA YRE -154 h FR MARKING SMD TRANSISTOR
Text: S IE M E N S 5-V Low-Drop Voltage Regulator TLE 4263 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection Reverse polarity protection Short-circuit proof
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Q67006-A9095
P-DSO-20-6
Q67006-A9357
P-DSO-20-6
P-DSO-14-1
35x45"
fl235t
smd transistor 41B
transistor c160
smd marking KD
TRANSISTOR SMD MARKING CODE kd
TRANSISTOR SMD MARKING CODE XI
siemens microcontroller
s47 IC smd marking code
smd transistor marking HA
YRE -154 h
FR MARKING SMD TRANSISTOR
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siemens 30 090
Abstract: Q67006-A9275 TLE 4207 G
Text: S IE M E N S 1 -A D u a l-H B D D u a l-H a lf-B rid g e Driver TLE 4207 Overview Features Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption in stand-by (Inhibit) mode Low saturation voltage; ty p .l .2 V total @ 25 °C; 0.4 A
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Q67006-A9275
P-DSO-14-4
P-DSO-20-6
fl53SbOS
0103SL
P-DSO-20-6
35x45"
siemens 30 090
TLE 4207 G
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siemens 8032 cpu
Abstract: siemens 8032 SIEMENS 80515 80535 80515 88H1 MC 80535 Microcontroller Family SAB 8051 Pocket Guide 80515 application 80515/80535 8 Bit Microcontroller
Text: SIEM EN S High-Performance 8-Bit Single Chip Microcontroller SAB 80515/80535 P relim in ary SA B 80515 SAB 80535 • • • • • • • • • • • • • • • • • Microcontroller with factory mask-programmable ROM Microcontroller for external ROM
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80C515
16-bit
256-bit-addressable
A8-A12
A8-A12
S23SL05
siemens 8032 cpu
siemens 8032
SIEMENS 80515
80535
80515
88H1
MC 80535
Microcontroller Family SAB 8051 Pocket Guide
80515 application
80515/80535 8 Bit Microcontroller
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IGBT Module BSM150GB120D
Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
Text: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule
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BSM150GB120D
2x150
C67076-A2108-A2
C67076-A2013-A2
sii00202
IGBT Module BSM150GB120D
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 150 Gb 160 d
BSM 15 GB
GAL 700
BSM150GB120D
siemens igbt BSM 100 gb
siemens igbt BSM 50 gb 100 d
aa-es siemens
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siemens sab 82538
Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Text: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
fl23Sb05
siemens sab 82538
3tb siemens
T-0657
SiEMENS PM 350 98
SAB 80188
QD70
SIEMENS ESCC8
1fa MARKING
processor hbt 00 04 g
Q67100-H6441
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Hall sensors Siemens
Abstract: F261 GH600 siemens magnetic sensors Hall Siemens hall 450
Text: SIEM EN S Magnetic Fieldprobe GH 600 Pin configuration +B !L _ J / Chip size 3.7±o.s 1 + Su pp ly Current 2 - Hall Voltage 3 + Hall Voltage 4 - Supply Current GPX0684S Features Typical applications • Very high sensitivity • Very low current requirement
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Q68000-A8763-F261
235b05
Hall sensors Siemens
F261
GH600
siemens magnetic sensors
Hall Siemens
hall 450
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Very Short Switching Time Silicon PIN Photodiode with Daylight Filter SFH 229 SFH 229 F Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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fl535b05
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Untitled
Abstract: No abstract text available
Text: SIEM ENS HITFET BTS141 Smart Lowside Power Switch Features Product Summary • • • • • • • Continuous drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input Input protection (ESD) Thermal shutdown
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BTS141
channe141
fl23Sb05
TQ220
T0220
Q67060-S6502-A2
E3045A
Q67060-S6502-A3
GPT0S164
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Untitled
Abstract: No abstract text available
Text: • SIEM ENS Ô235b05 QaEDESb b HSIË fî SIEMENS A KT IE NGESELLSCHAF 1 M X 36-Bit Dynamic RAM Module 47E D HYM 361Q20S-8Q/-10 Advanced Information • • • • • • • • • • 1 04 576 x 36-bit organization alternative 2 097 153 x 18-bit Fast access and cycle time
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235b05
36-Bit
361Q20S-8Q/-10
18-bit)
361020S-80)
361020S-10)
361020S-10
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Untitled
Abstract: No abstract text available
Text: SIEM EN S BTS 730 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse width reduction and overload shutdown • Load dump protection
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fi235hDS
flE35bÃ
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SIEMENS tle 420
Abstract: No abstract text available
Text: SIEMENS 3-A DC Motor Driver TLE 5204 Overview SPT IC 1 Features • • • • • • • Output current ± 3 A I/O error diagnostics Short-circuit proof Four-quadrant operation Integrated free-wheeling diodes Wide temperature range Break low and break high, if open load detection is
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Q67000-A9177
P-T0220-7-1
Q67006-A9234
P-T0220-7-8
fl23SbDS
G1D3704
D103705
SIEMENS tle 420
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Untitled
Abstract: No abstract text available
Text: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be
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64-bit/s
128-kbit/s
IA-BIDfCl80x
1A-BID180x
0235b05
54CC2
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Untitled
Abstract: No abstract text available
Text: • fl235bOS DDTBlMb 304 ■ SIEMENS PROFET BTS721L1 Smart Four Channel Highside Power Switch Product Summary Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection including load dump
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fl235bOS
BTS721L1
fl235b05
P-DSQ-20-9
Q67060-S7002-A2
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Untitled
Abstract: No abstract text available
Text: • fiE35b05 Q103427 ^50 SIEM ENS TrilithIC BTS 780 Target Data Overview Features • • • • • • » • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications
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fiE35b05
Q103427
fl235b05
S35bGS
Q1Q3443
P-T0263-15-1
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2
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47ki2,
Q62702-C2496
OT-363
235LQ5
D12Qb7M
BCR48PN
D12Qb75
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als31c
Abstract: No abstract text available
Text: SIEMENS 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organized SIMM modules for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time
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32-Bit
324025S/GS-50/-60
324025S/GS-50)
324025S/GS-60)
0235fci05
L-SIM-72-12
111111iTTTTTTT
als31c
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B32591C1104
Abstract: No abstract text available
Text: B 32 590 . B 32 594 Metallized Polyester Film Capacitors MKT Coated (Powder Dipped) Standard applications Construction • Dielectric: polyethylene terephthalate (polyester) • Stacked-film technology for lead spacing 7,5 . 15 mm (100 . 400 Vdc);
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A235b05
0D7MA33
Vdc/160
fl23SbOS
flS35fc
007HB35
Vdc/16
6S35bD
B32591C1104
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BTS 177
Abstract: 131S E3043 E3062A GPT05904 GPTD5165 Q67060-S6700-A2 Q67060-S6700-A3 Q67060-S6700-A4 BTS current sense siemens
Text: flS3SbDS 00Ô1314 =lû3 SIEM ENS HITFET BTS 917 Smart Lowside Power Switch Product Summary Features • Logic Level Input Continious drain source voltage • Input protection ESD On-state resistance • Thermal shutdown Current limitation • Overload protection
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23SbDS
T0220/5
Q67060-S6700-A2
GPTD5165
E3043
Q67060-S6700-A3
E3062A
Q67060-S6700-A4
BTS 177
131S
E3043
GPT05904
GPTD5165
Q67060-S6700-A2
Q67060-S6700-A3
Q67060-S6700-A4
BTS current sense siemens
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MC801
Abstract: SAB-502-2R RC2H C5022 sab-502 TCON application 80C52 SAB-C502 SAF-C502
Text: SIE M E N S SAB-C502 8-Bit CMOS Microcontroller • Fully compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing
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SAB-C502
SAB-C502-2R
15-bit
P-DIP-40
P-LCC-44
SAB-C502
SAF-C502
SAB-C502-L
C502-2R
SAB-C501
MC801
SAB-502-2R
RC2H
C5022
sab-502
TCON application
80C52
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4 M X 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 5141OOBJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:
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5141OOBJ/BT-60/-70/-80
514100BJL/BTL-60/-70/-80
HYB514100BJ/BT/BJL/BTL
DG553Ã
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